PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read(MX29L1611-75/10/12) • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns. • Full voltage range 2.7 to 3.6V write, erase and read (MX29L1611-90) • Fast random access/page mode access time: 90/ 35ns • Endurance: 10,000 cycles • Page access depth: 16 bytes/8 words, page address A0, A1, A2 • Sector erase architecture - 32 equal sectors of 64k bytes each - Sector erase time: 200ms typical • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability • • • • • • • - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit < 1.8V Software and hardware data protection Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 5ms typical Low power dissipation - 50mA active current - 20uA standby current Two independently Protected sectors Industry standard surface mount packaging - 44 lead SOP, 48 TSOP(I) GENERAL DESCRIPTION To allow for simple in-system reprogrammability, the MX29L1611 does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. The MX29L1611 is a 16-mega bit pagemode Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29L1611 includes 32 sectors of 64KB(65,536 Bytes or 32,768 words). MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory and fast page mode access. The MX29L1611 is packaged 44-pin SOP and 48-TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. MXIC Flash technology reliably stores memory contents even after 10,000 cycles. The MXIC's cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29L1611 uses a 2.7V~3.6V VCC supply to perform the Auto Erase and Auto Program algorithms. The standard MX29L1611 offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29L1611 has separate chip enable CE, output enable (OE), and write enable (WE) controls. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29L1611 uses a command register to manage this functionality. P/N:PM0511 REV. 2.4, NOV. 06, 2001 1 MX29L1611 PIN DESCRIPTION PIN CONFIGURATIONS SYMBOL A0 - A19 Q0 - Q14 Q15/A-1 WE A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 MX29L1611 44 SOP(500mil) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 WP A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC CE OE WE WP* BYTE VCC GND PIN NAME Address Input Data Input/Output Q15(Word mode)/LSB addr.(Byte mode) Chip Enable Input Output Enable Input Write Enable Input Sector Write Protect Input Word/Byte Selection Input Power Supply Ground Pin *Only for 44-SOP 48 TSOP (NORMAL TYPE) BYTE A16 A15 A14 A13 A12 A11 A10 A9 A8 A19 GND WE A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 MX29L1611 (Normal Type) P/N:PM0511 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 GND GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC VCC NC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND GND REV. 2.4, NOV. 06, 2001 2 MX29L1611 BLOCK DIAGRAM WRITE WE OE WP BYTE CONTROL LOGIC STATE HIGH VOLTAGE MACHINE (WSM) LATCH BUFFER COMMAND INTERFACE REGISTER (CIR) MX29L1611 FLASH ARRAY ARRAY Y-DECODER AND X-DECODER ADDRESS Q15/A-1 A0-A19 PROGRAM/ERASE INPUT Y-PASS GATE SOURCE HV COMMAND DATA DECODER SENSE AMPLIFIER PGM DATA HV COMMAND DATA LATCH Y-select PROGRAM DATA LATCH Q0-Q15/A-1 I/O BUFFER P/N:PM0511 REV. 2.4, NOV. 06, 2001 3 MX29L1611 Table1.PIN DESCRIPTIONS SYMBOL A0 - A19 TYPE INPUT Q0 - Q7 INPUT/OUTPUT Q8 - Q14 INPUT/OUTPUT Q15/A -1 INPUT/OUTPUT CE INPUT OE INPUT WE INPUT WP INPUT BYTE INPUT VCC GND NAME AND FUNCTION ADDRESS INPUTS: for memory addresses. Addresses are internally latched during a write cycle. LOW-BYTE DATA BUS: Input data and commands during Command Interface Register(CIR) write cycles. Outputs array,status and identifier data in the appropriate read mode. Floated when the chip is de-selected or the outputs are disabled. HIGH-BYTE DATA BUS: Inputs data during x 16 Data-Write operations. Outputs array, identifier data in the appropriate read mode; not used for status register reads. Floated when the chip is de-selected or the outputs are disabled Selects between high-byte data INPUT/OUTPUT(BYTE = HIGH) and LSB ADDRESS(BYTE = LOW) CHIP ENABLE INPUTS: Activate the device's control logic, Input buffers, decoders and sense amplifiers. With CE high, the device is deselected and power consumption reduces to Standby level upon completion of any current program or erase operations. CE must be low to select the device. OUTPUT ENABLES: Gates the device's data through the output buffers during a read cycle OE is active low. WRITE ENABLE: Controls writes to the Command Interface Register(CIR). WE is active low. WRITE PROTECT: Top or Bottom sector can be protected by writing a nonvolatile protect-bit for each sector. When WP is high, all sectors can be programmed or erased regardless of the state of the protect-bits. BYTE ENABLE: BYTE Low places device in x8 mode. All data is then input or output on Q0-7 and Q8-14 float. AddressQ15/A-1 selects between the high and low byte. BYTE high places the device in x16 mode, and turns off the Q15/ A-1 input buffer. Address A0, then becomes the lowest order address. DEVICE POWER SUPPLY(3.0V~3.6V for MX29L1611-75/10/12 ; 2.7V~3.6V for MX29L1611-90) GROUND P/N:PM0511 REV. 2.4, NOV. 06, 2001 4 MX29L1611 BUS OPERATION Flash memory reads, erases and writes in-system via the local CPU . All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. Table 2.1 Bus Operations for Word-Wide Mode (BYTE = VIH) Mode Read Output Disable Standby Manufacturer ID Device ID Write Notes 1 1 1 2,4 2,4 1,3 CE VIL VIL VIH VIL VIL VIL OE VIL VIH X VIL VIL VIH WE VIH VIH X VIH VIH VIL A0 X X X VIL VIH X A1 X X X VIL VIL X A9 X X X VID VID X Q0-Q7 DOUT High Z High Z C2H F8H DIN Q8-Q14 DOUT High Z HIgh Z 00H 00H DIN Q15/A-1 DOUT HighZ HighZ 0B 0B DIN A1 X X X VIL VIL X A9 X X X VID VID X Q0-Q7 DOUT High Z High Z C2H F8H DIN Q8-Q14 HighZ High Z HIgh Z High Z High Z High Z Q15/A-1 VIL/VIH X X VIL VIL VIL/VIH Table2.2 Bus Operations for Byte-Wide Mode (BYTE = VIL) Mode Read Output Disable Standby Manufacturer ID Device ID Write Notes 1 1 1 2,4 2,4 1,3 CE VIL VIL VIH VIL VIL VIL OE VIL VIH X VIL VIL VIH WE VIH VIH X VIH VIH VIL A0 X X X VIL VIH X NOTES : 1. X can be VIH or VIL for address or control pins. 2. A0 and A1 at VIL provide manufacturer ID codes. A0 at VIH and A1 at VIL provide device ID codes. A0 at VIL, A1 at VIH and with appropriate sector addresses provide Sector Protect Code.(Refer to Table 4) 3. Commands for different Erase operations, Data program operations or Sector Protect operations can only be successfully completed through proper command sequence. 4. VID = 11.5V- 12.5V. P/N:PM0511 REV. 2.4, NOV. 06, 2001 5 MX29L1611 WRITE OPERATIONS Commands are written to the COMMAND INTERFACE REGISTER (CIR) using standard microprocessor write timings. The CIR serves as the interface between the microprocessor and the internal chip operation. The CIR can decipher Read Array, Read Silicon ID, Erase and Program command. In the event of a read command, the CIR simply points the read path at either the array or the silicon ID, depending on the specific read command given. For a program or erase cycle, the CIR informs the write state machine that a program or erase has been requested. During a program cycle, the write state machine will control the program sequences and the CIR will only respond to status reads. During a sector/ chip erase cycle, the CIR will respond to status reads and erase suspend. After the write state machine has completed its task, it will allow the CIR to respond to its full command set. The CIR stays at read status register mode until the microprocessor issues another valid command sequence. Device operations are selected by writing commands into the CIR. Table 3 below defines 16 Mbit flash family command. TABLE 3. COMMAND DEFINITIONS Command Read/ Silicon Page/Byte Chip Sector Erase Erase Read Clear Sequence Reset ID Read Program Erase Erase Suspend Resume Status Reg. Status Reg. Bus Write 4 4 4 6 6 3 3 4 3 Cycles Req'd First Bus Addr 5555H 5555H 5555H 5555H 5555H 5555H 5555H 5555H 5555H Write Cycle Data AAH AAH AAH AAH AAH AAH AAH AAH AAH Second Bus Addr 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH Write Cycle Data 55H 55H 55H 55H 55H 55H 55H 55H 55H Third Bus Addr 5555H 5555H 5555H 5555H 5555H 5555H 5555H 5555H 5555H Write Cycle Data F0H 90H A0H 80H 80H B0H D0H 70H 50H Fourth Bus Addr RA 00H/01H PA 5555H 5555H X Read/Write Cycle Data RD C2H/F8H PD AAH AAH SRD Fifth Bus Addr 2AAAH 2AAAH Write Cycle Data 55H 55H Sixth Bus Addr 5555H SA Write Cycle Data 10H 30H P/N:PM0511 REV. 2.4, NOV. 06, 2001 6 MX29L1611 TABLE 3. COMMAND DEFINITIONS Command Sequence Bus Write Sector Sector Verify Sector Abort Protection Unprotect Protect 6 6 4 3 Cycles Req'd First Bus Addr 5555H 5555H 5555H 5555H Write Cycle Data AAH AAH AAH AAH Second Bus Addr 2AAAH 2AAAH 2AAAH 2AAAH Write Cycle Data 55H 55H 55H 55H Third Bus Addr 5555H 5555H 5555H 5555H Write Cycle Data 60H 60H 90H E0H Fourth Bus Addr 5555H 5555H * Read/Write Cycle Data AAH AAH C2H* Fifth Bus Addr 2AAAH 2AAAH Write Cycle Data 55H 55H Sixth Bus Addr SA** SA** Write Cycle Data 20H 40H Notes: 1. Address bit A15 -- A19 = X = Don't care for all address commands except for Program Address(PA) and Sector Address(SA). 5555H and 2AAAH address command codes stand for Hex number starting from A0 to A14. 2. Bus operations are defined in Table 2. 3. RA = Address of the memory location to be read. PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA = Address of the sector to be erased. The combination of A15 -- A19 will uniquely select any sector. 4. RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the rising edge of WE. SRD = Data read from status register. 5. Only Q0-Q7 command data is taken, Q8-Q15 = Don't care. * Refer to Table 4, Figure 12. ** Only the top and the bottom sectors have protect- bit feature. SA = (A19,A18,A17,A16,A15) = 00000B or 11111B is valid. P/N:PM0511 REV. 2.4, NOV. 06, 2001 7 MX29L1611 DEVICE OPERATION SILICON ID READ The manufacturer and device codes may also be read via the command register, for instances when the MX29L1611 is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 3. The Silicon ID Read mode allows the reading out of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. Byte 0 (A0=VIL) represents the manfacturer's code (MXIC=C2H) and byte 1 (A0=VIH) the device identifier code (MX29L1611=F8H). To activate this mode, the programming equipment must force VID (11.5V~12.5V) on address pin A9. Two identifier bytes may then be sequenced from the device outputs by toggling address A0 from VIL to VIH. All addresses are don't cares except A0 and A1. To terminate the operation, it is necessary to write the read/reset command sequence into the CIR. Table 4. MX29L1611 Silion ID Codes and Verify Sector Protect Code Type A19 A18 A17 A16 A15 A1 A0 Manufacturer Code X X X X X VIL VIL MX29L1611 Device Code X X X X X Verify Sector Protect Sector Address*** Code(HEX) DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 C2H* 1 0 0 0 1 1 0 0 VIL VIH F8H* 1 1 1 1 1 0 0 0 VIH VIL C2H** 1 1 0 0 0 0 1 0 * MX29L1611 Manufacturer Code = C2H, Device Code = F8H when BYTE = VIL MX29L1611 Manufacturer Code = 00C2H, Device Code = 00F8H when BYTE = VIH ** Outputs C2H at protected sector address, 00H at unprotected scetor address. ***Only the top and the bottom sectors have protect-bit feature. Sector address = (A19, A18,A17,A16,A15) = 00000B or 11111B P/N:PM0511 REV. 2.4, NOV. 06, 2001 8 MX29L1611 After three-cycle command sequence is given, a byte(word) load is performed by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Maximum of 128 bytes of data may be loaded into each page by the same procedure as outlined in the page program section below. READ/RESET COMMAND The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the CIR contents are altered by a valid command sequence. The device will automatically power-up in the read/reset state. In this case, a command sequence is not required for "read operation". Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. BYTE-WIDE LOAD/WORD-WIDE LOAD Byte(word) loads are used to enter the 128 bytes(64 words) of a page to be programmed or the software codes for data protection. A byte load(word load) is performed by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. The MX29L1611 is accessed like an EPROM. When CE and OE are low and WE is high the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual line control gives designers flexibility in preventing bus contention. Either byte-wide load or word-wide load is determined(Byte = VIL or VIH is latched) on the falling edge of the WE (or CE) during the 3rd command write cycle. Note that the read/reset command is not valid when program or erase is in progress. PROGRAM PAGE READ Any page to be programmed should have the page in the erased state first, i.e. performing sector erase is suggested before page programming can be performed. The MX29L1611 offers "fast page mode read" function. The users can take the access time advantage if keeping CE, OE at low and the same page address (A3~A19 unchanged). Please refer to Figure 5-2 for detailed timing waveform. The system performance could be enhanced by initiating 1 normal read and 7 fast page reads(for word mode A0~A2) or 15 fast page reads(for byte mode altering A-1~A2). The device is programmed on a page basis. If a byte(word) of data within a page is to be changed, data for the entire page can be loaded into the device. Any byte(word) that is not loaded during the programming of its page will be still in the erased state (i.e. FFH). Once the bytes of a page are loaded into the device, they are simultaneously programmed during the internal programming period. After the first data byte(word) has been loaded into the device, successive bytes(words) are entered in the same manner. Each new byte(word) to be programmed must have its high to low transition on WE (or CE) within 30us of the low to high transition of WE (or CE) of the preceding byte(word). A6 to A19 specify the page address, i.e., the device is page-aligned on 128 bytes(64 words)boundary. The page address must be valid during each high to low transition of WE or CE. A1 to A5 specify the byte address within the page, A0 to A5 specify the word address withih the page. The PAGE PROGRAM To initiate Page program mode, a three-cycle command sequence is required. There are two "unlock" write cycles. These are followed by writing the page program command-A0H. Any attempt to write to the device without the three-cycle command sequence will not start the internal Write State Machine(WSM), no data will be written to the device. P/N:PM0511 REV. 2.4, NOV. 06, 2001 9 MX29L1611 byte(word) may be loaded in any order; sequential loading is not required. If a high to low transition of CE or WE is not detected whithin 100us of the last low to high transition, the load period will end and the internal programming period will start. The Auto page program terminates when status on DQ7 is '1' at which time the device stays at read status register mode until the CIR contents are altered by a valid command sequence.(Refer to table 3,6 and Figure 1,7,8) SECTOR ERASE CHIP ERASE Sector erase does not require the user to program the device prior to erase. The system is not required to provide any controls or timings during these operations. Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the set-up command-80H. Two more "unlock" write cycles are then followed by the sector erase command-30H. The sector address is latched on the falling edge of WE, while the command (data) is latched on the rising edge of WE. Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command-80H. Two more "unlock" write cycles are then followed by the chip erase command-10H. The automatic sector erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the status on DQ7 is "1" at which time the device stays at read status register mode. The device remains enabled for read status register mode until the CIR contents are altered by a valid command sequence.(Refer to table 3,6 and Figure 3,4,7,9) Chip erase does not require the user to program the device prior to erase. The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the status on DQ7 is "1" at which time the device stays at read status register mode. The device remains enabled for read status register mode until the CIR contents are altered by a valid command sequence.(Refer to table 3,6 and Figure 2,7,9) ERASE SUSPEND This command only has meaning while the the WSM is executing SECTOR or CHIP erase operation, and therefore will only be responded to during SECTOR or CHIP erase operation. After this command has been executed, the CIR will initiate the WSM to suspend erase operations, and then return to Read Status Register mode. The WSM will set the DQ6 bit to a "1". Once the WSM has reached the Suspend state,the WSM will set the DQ7 bit to a "1", At this time, WSM allows the CIR to respond to the Read Array, Read Status Register, Abort and Erase Resume commands only. In this mode, the CIR will not resopnd to any other comands. The WSM will continue to run, idling in the SUSPEND state, regardless of the state of all input control pins. Table 5. MX29L1611 Sector Address Table (Byte-Wide Mode) A19 A18 A17 A16 A15 Address Range[A19, -1] SA0 0 0 0 0 0 000000H--00FFFFH SA1 0 0 0 0 1 010000H--01FFFFH SA2 0 0 0 1 0 020000H--02FFFFH SA3 0 0 0 1 1 030000H--03FFFFH SA4 0 0 1 0 0 040000H--04FFFFH ... ... ... ... 1 1 1 1 SA31 ... 1 ................................ ERASE RESUME 1F0000H--1FFFFFH This command will cause the CIR to clear the suspend state and set the DQ6 to a '0', but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions. P/N:PM0511 REV. 2.4, NOV. 06, 2001 10 MX29L1611 READ STATUS REGISTER CLEAR STATUS REGISTER The MXIC's 16 Mbit flash family contains a status register which may be read to determine when a program or erase operation is complete, and whether that operation completed successfully. The status register may be read at any time by writing the Read Status command to the CIR. After writing this command, all subsequent read operations output data from the status register until another valid command sequence is written to the CIR. A Read Array command must be written to the CIR to return to the Read Array mode. The Eraes fail status bit (DQ5) and Program fail status bit (DQ4) are set by the write state machine, and can only be reset by the system software. These bits can indicate various failure conditions(see Table 6). By allowing the system software to control the resetting of these bits, several operations may be performed (such as cumulatively programming several pages or erasing multiple blocks in squence). The status register may then be read to determine if an error occurred during that programming or erasure series. This adds flexibility to the way the device may be programmed or erased. Additionally, once the program(erase) fail bit happens, the program (erase) operation can not be performed further. The program(erase) fail bit must be reset by system software before further page program or sector (chip) erase are attempted. To clear the status register, the Clear Status Register command is written to the CIR. Then, any other command may be issued to the CIR. Note again that before a read cycle can be initiated, a Read command must be written to the CIR to specify whether the read data is to come from the Array, Status Register or Silicon ID. The status register bits are output on DQ3 - DQ7(table 6) whether the device is in the byte-wide (x8) or wordwide (x16) mode for the MX29L1611. In the word-wide mode the upper byte, DQ(8:15) is set to 00H during a Read Status command. In the byte-wide mode, DQ(8:14) are tri-stated and DQ15/A-1 retains the low order address function. It should be noted that the contents of the status register are latched on the falling edge of OE or CE whichever occurs last in the read cycle. This prevents possible bus errors which might occur if the contents of the status register change while reading the status register. CE or OE must be toggled with each subsequent status read, or the completion of a program or erase operation will not be evident. The Status Register is the interface between the microprocessor and the Write State Machine (WSM). When the WSM is active, this register will indicate the status of the WSM, and will also hold the bits indicating whether or not the WSM was successful in performing the desired operation. The WSM sets status bits four through seven and clears bits six and seven, but cannot clear status bits four and five. If Erase fail or Program fail status bit is detected, the Status Register is not cleared until the Clear Status Register command is written. The MX29L1611 automatically outputs Status Register data when read after Chip Erase, Sector Erase, Page Program or Read Status Command write cycle. The default state of the Status Register after powerup and return from deep power-down mode is (DQ7, DQ6, DQ5, DQ4) = 1000B. DQ3 = 0 or 1 depends on sector-protect status, can not be changed by Clear Status Register Command or Write State Machine. P/N:PM0511 REV. 2.4, NOV. 06, 2001 11 MX29L1611 TABLE 6. MX29L1611 STATUS REGISTER IN PROGRESS STATUS NOTES DQ7 DQ6 DQ5 DQ4 DQ3 PROGRAM 1,2, 6 0 0 0 0 0/1 ERASE 1,3, 6 0 0 0 0 0/1 SUSPEND (NOT COMPLETE) 1,4, 6 (COMPLETE) COMPLETE FAIL 0 1 0 0 0/1 1 1 0 0 0/1 PROGRAM 1,2, 6 1 0 0 0 0/1 ERASE 1,3, 6 1 0 0 0 0/1 PROGRAM 1,5, 6 1 0 0 1 0/1 ERASE 1,5, 6 1 0 1 0 0/1 6 1 0 0 0 0/1 AFTER CLEARING STATUS REGISTER NOTES: 1. DQ7 : WRITE STATE MACHINE STATUS 1 = READY, 0 = BUSY DQ6 : ERASE SUSPEND STATUS 1 = SUSPEND, 0 = NO SUSPEND DQ5 : ERASE FAIL STATUS 1 = FAIL IN ERASE, 0 = SUCCESSFUL ERASE DQ4 : PROGRAM FAIL STATUS 1 = FAIL IN PROGRAM, 0 = SUCCESSFUL PROGRAM DQ3 : SECTOR-PROTECT STATUS 1 = SECTOR 0 OR/AND 15 PROTECTED 0 = NONE OF SECTOR PROTECTED DQ2 - 0 = RESERVED FOR FUTURE ENHANCEMENTS. These bits are reserved for future use ; mask them out when polling the Status Register. 2. PROGRAM STATUS is for the status during Page Programming or Sector Unprotect mode. 3. ERASE STATUS is for the status during Sector/Chip Erase or Sector Protection mode. 4. SUSPEND STATUS is for both Sector and Chip Erase mode . 5. FAIL STATUS bit(DQ4 or DQ5) is provided during Page Program or Sector/Chip Erase modes respectively. 6. DQ3 = 0 or1 depends on Sector-Protect Status. P/N:PM0511 REV. 2.4, NOV. 06, 2001 12 MX29L1611 HARDWARE SECTOR PROTECTION SECTOR UNPROTECT The MX29L1611 features sector protection. This feature will disable both program and erase operations in either the top or the bottom sector (0 or 31). The sector protection feature is enabled using system software by the user(Refer to table 3). The device is shipped with both sectors unprotected. Alternatively, MXIC may protect sectors in the factory prior to shipping the device. It is also possible to unprotect the sector , same as the first five write command cycles in activating sector protection mode followed by the Unprotect Sector command -40H, the automatic Unprotect operation begins on the rising edge of the last WE pulse in the command sequence and terminates when the Status on DQ7 is '1' at which time the device stays at the read status register mode. (Refer to table 3,6 and Figure 11,12) SECTOR PROTECTION The device remains enabled for read status register mode until the CIR contents are altered by a valid command sequence. To activate this mode, a six-bus cycle operation is required. There are two 'unlock' write cycles. These are followed by writing the 'set-up' command. Two more 'unlock' write cycles are then followed by the Lock Sector command - 20H. Sector address is latched on the falling edge of CE or WE of the sixth cycle of the command sequence. The automatic Lock operation begins on the rising edge of the last WE pulse in the command sequence and terminates when the Status on DQ7 is '1' at which time the device stays at the read status register mode. Either Protect or Unprotect sector mode is accomplished by keeping WP high, i.e. protect-bit status can only be changed with a valid command sequence and WP at high. When WP is high, all sectors can be programmed or erased regardless of the state of the protect-bits. Protect-bit status will not be changed during chip/sector erase operations. With WP at VIL, only unprotected sectors can be programmed or erased. The device remains enabled for read status register mode until the CIR contents are altered by a valid command sequence (Refer to table 3,6 and Figure 10,12 ). ABORT MODE To activate Abort mode, a three-bus cycle operation is required. The E0H command (Refer to table 3) only stops Page program or Sector /Chip erase operation currently in progress and puts the device in Abort mode. So the program or erase operation will not be completed. Since the data in some page/sectors is no longer valid due to an incomplete program or erase operation, the program fail (DQ4) or erase fail (DQ5)bit will be set. VERIFY SECTOR PROTECT To verify the Protect status of the Top and the Bottom sector, operation is initiated by writing Silicon ID read command into the command register. Following the command write, a read cycle from address XXX0H retrieves the Manufacturer code of C2H. A read cycle from XXX1H returns the Device code F8H. A read cycle from appropriate address returns information as to which sectors are protected. To terminate the operation, it is necessary to write the read/reset command sequence into the CIR. A read array command MUST be written to bring the device out of the abort state without incurring any wake up latency. Note that once device is brought out, Clear status register mode is required before a program or erase operation can be executed. (Refer to table 3,4 and Figure 12) A few retries are required if Protect status can not be verified successfully after each operation. P/N:PM0511 REV. 2.4, NOV. 06, 2001 13 MX29L1611 DATA PROTECTION The MX29L1611 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the Read Array mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transitions or system noise. LOW VCC WRITE INHIBIT To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less than VLKO(typically 1.8V). If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the VCC level is greater than VLKO. It is the user's responsibility to ensure that the control pins are logically correct to prevent unintentional write when VCC is above VLKO. WRITE PULSE "GLITCH" PROTECTION Noise pulses of less than 10ns (typical) on CE or WE will not initiate a write cycle. LOGICAL INHIBIT Writing is inhibited by holding any one of OE = VIL,CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one. P/N:PM0511 REV. 2.4, NOV. 06, 2001 14 MX29L1611 Figure 1. AUTOMATIC PAGE PROGRAM FLOW CHART START Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data A0H Address 5555H Write Program Data/Address NO Loading End? YES Wait 100us Read Status Register NO SR7 = 1 ? YES SR4 = 0 ? NO YES Page Program Completed YES Program Error To Continue Other Operations, Do Clear S.R. Mode First Program another page? NO Operation Done, Device Stays At Read S.R. Mode Note : S.R. Stands for Status Register P/N:PM0511 REV. 2.4, NOV. 06, 2001 15 MX29L1611 Figure 2. AUTOMATIC CHIP ERASE FLOW CHART START Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 80H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 10H Address 5555H Read Status Register NO NO SR7 = 1 ? To Execute Suspend Mode ? YES Erase Suspend Flow (Figure 4.) YES SR5 = 0 ? NO YES Chip Erase Completed Operation Done, Device Stays at Read S.R. Mode Erase Error To Continue Other Operations, Do Clear S.R. Mode First P/N:PM0511 REV. 2.4, NOV. 06, 2001 16 MX29L1611 Figure 3. AUTOMATIC SECTOR ERASE FLOW CHART START Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 80H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 30H Sector Address Read Status Register NO NO SR7 = 1 ? To Execute Suspend Erase ? YES Erase Suspend Flow (Figure 4.) YES SR5 = 0 ? NO YES Sector Erase Completed Operation Done, Device Stays at Read S.R. Mode Erase Error To Continue Other Operations, Do Clear S.R. Mode First P/N:PM0511 REV. 2.4, NOV. 06, 2001 17 MX29L1611 Figure 4. ERASE SUSPEND/ERASE RESUME FLOW CHART START Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data B0H Address 5555H Read Status Register NO SR7 = 1 ? YES SR6 = 1 ? NO NO SR5 = 0 ? YES YES Erase has completed Erase Suspend Operation Done, Device Stays at Read S,R, Mode Write Data AAH Address 5555H Erase Error To Continue Other Operations, Do Clear S.R. Mode First Write Data 55H Address 2AAAH Write Data F0H Address 5555H Read Array NO Reading End ? YES Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data D0H Address 5555H Continue Erase P/N:PM0511 REV. 2.4, NOV. 06, 2001 18 MX29L1611 ELECTRICAL SPECIFICATIONS NOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. ABSOLUTE MAXIMUM RATINGS RATING VALUE Ambient Operating Temperature 0°C to 70°C Storage Temperature -65°C to 125°C Applied Input Voltage -0.5V to Vcc+0.5V Applied Output Voltage NOTICE: Specifications contained within the following tables are subject to change. -0.5V to Vcc+0.6V VCC to Ground Potential -0.5V to 4.0V A9 -0.5V to 12.5V °C, f = 1.0 MHz CAPACITANCE TA = 25° SYMBOL CIN COUT PARAMETER Input Capacitance Output Capacitance MIN. TYP. MAX. 14 16 UNIT pF pF CONDITIONS VIN = 0V VOUT = 0V SWITCHING TEST CIRCUITS 2.7K ohm DEVICE UNDER TEST 3.3V CL 6.2K ohm DIODES = IN3064 OR EQUIVALENT CL = 30 pF Including jig capacitance(29L1611-75/10/12)@Vcc=3.0V~3.6V CL=100pF Including jig capacitance (29L1611-90) @Vcc=2.7V~3.6V SWITCHING TEST WAVEFORMS 2.4V 2.0V 1.5V TEST POINTS 0.8V 0.45V OUTPUT INPUT AC TESTING: Inputs are driven at 2.4V for a logic "1" and 0.45V for a logic "0". Input pulse rise and fall times are < 5ns. P/N:PM0511 REV. 2.4, NOV. 06, 2001 19 MX29L1611 5.1 DC CHARACTERISTICS Vcc = 3.0V ~ 3.6V SYMBOL PARAMETER IIL Input Load NOTES MIN. TYP. 1 MAX. ±1 UNITS TEST CONDITIONS uA VCC = VCC Max Current ILO Output Leakage VIN = VCC or GND 1 ±10 uA Current ISB1 VCC Standby VIN = VCC or GND 1 20 50 uA Current(CMOS) ISB2 VCC Standby VCC Read 1 2 mA VCC Erase 1 50 80 mA VCC Program VCC = VCC Max f = 10MHz, IOUT = 0 mA 1,2 5 mA Suspend Current ICC3 VCC = VCC Max CE = VIH Current ICC2 VCC = VCC Max CE = VCC ± 0.2V Current(TTL) ICC1 VCC = VCC Max CE = VIH Sector Erase Suspended 1 15 30 mA Program in Progress 15 30 mA Erase in Progress Current ICC4 VCC Erase Current 1 VIL Input Low Voltage 3 -0.3 0.6 V VIH Input High Voltage 4 0.7xVCC VCC+0.3 V VOL Output Low Voltage 0.45 V IOL = 2.1mA, Vcc = Vcc Min VOH Output High Voltage V IOH = -100uA, Vcc = Vcc Min 2.4 NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds). 2. ICC2 is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ICC2 and ICC1. 3. VIL min. = -1.0V for pulse width < 50ns. VIL min. = -2.0V for pulse width < 20ns. 4. VIH max. = VCC + 1.5V for pulse width < 20ns. If VIH is over the specified maximum value, read operation cannot be guaranteed. P/N:PM0511 REV. 2.4, NOV. 06, 2001 20 MX29L1611 AC CHARACTERISTICS -- READ OPERATIONS SYMBOL DESCRIPTIONS 29L1611-75 29L1611-90 MIN. MAX. MIN. MAX. UNIT CONDITIONS tACC Address to Output Delay 75 90 ns CE=OE=VIL tPA Page Mode Access Time 30 35 ns CE= OE = VIL tCE CE to Output Delay 75 90 ns OE=VIL tOE OE to Output Delay 30 35 ns CE=VIL tDF OE High to Output Delay 0 20 ns CE=VIL tOH Address to Output hold 0 ns CE=OE=VIL tBACC BYTE to Output Delay 75 90 ns CE= OE=VIL tBHZ BYTE Low to Output in High Z 20 20 ns CE=VIL SYMBOL DESCRIPTIONS 20 0 0 29L1611-10 29L1611-12 MIN. MAX. MIN. MAX. UNIT CONDITIONS tACC Address to Output Delay 100 120 ns CE=OE=VIL tPA Page Mode Access Time 30 40 ns CE= OE = VIL tCE CE to Output Delay 100 120 ns OE=VIL tOE OE to Output Delay 30 30 ns CE=VIL tDF OE High to Output Delay 0 20 ns CE=VIL tOH Address to Output hold 0 ns CE=OE=VIL tBACC BYTE to Output Delay 100 120 ns CE= OE=VIL tBHZ BYTE Low to Output in High Z 20 20 ns CE=VIL 20 0 0 NOTE: In the voltage range 3.0~3.6V, 29L1611-90 achieves tPA=30ns or better. TEST CONDITIONS: • Input pulse levels: 0.45V/2.4V • Input rise and fall times: 5ns • Output load: Speed options output load (Including scope and jig) 29L1611-75 1TTL gate + 30pF 29L1611-90/10/12 1TTL gate + 100pF • Reference levels for measuring timing: 1.5V NOTE: 1. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven. P/N:PM0511 REV. 2.4, NOV. 06, 2001 21 MX29L1611 Figure 5-1. NORMAL READ TIMING WAVEFORMS Vcc Power-up Standby Device and Outputs Enabled address selection Standby Vcc Power-down Data valid VIH ADDRESSES STABLE ADDRESSES VIL VIH CE VIL VIH OE VIL tDF VIH WE tOE VIL tCE tOH VOH DATA OUT HIGH Z HIGH Z Data out valid VOL tACC 5.0V VCC GND NOTE: 1. For real world application, BYTE pin should be either static high(word mode) or static low(byte mode); dynamic switching of BYTE pin is not recommended. P/N:PM0511 REV. 2.4, NOV. 06, 2001 22 MX29L1611 Figure 5-2. PAGE READ TIMING WAVEFORMS VALID ADDRESS A3-A19 (A-1), A0~A2 tACC CE OE tPA tPA tPA tOE tOH tDF DATA OUT Figure 6. BYTE TIMING WAVEFORMS VIH ADDRESSES STABLE ADDRESSES VIL VIH CE VIL VIH OE VIL tDF tBACC VIH tOE BYTE VIL tCE tOH VOH DATA(DQ0-DQ7) HIGH Z Data Output HIGH Z Data Output VOL tACC tBHZ VOH DATA(DQ8-DQ15) HIGH Z HIGH Z Data Output VOL P/N:PM0511 REV. 2.4, NOV. 06, 2001 23 MX29L1611 AC CHARACTERISTICS -- WRITE/ERASE/PROGRAM OPERATIONS 29L1611-75 29L1611-90 MIN. SYMBOL DESCRIPTION MIN. MAX. tWC Write Cycle Time 75 90 ns tAS Address Setup Time 0 0 ns tAH Address Hold Time 45 45 ns tDS Data Setup Time 35 45 ns tDH Data Hold Time 10 10 ns tOES Output Enable Setup Time 0 0 ns tCES CE Setup Time 0 0 ns tGHWL Read Recover TimeBefore Write 0 0 tCS CE Setup Time 0 0 ns tCH CE Hold Time 0 0 ns tWP Write Pulse Width 35 35 ns tWPH Write Pulse Width High 30 30 ns tBALC Byte(Word) Address Load Cycle 0.3 tBAL Byte(Word) Address Load Time 100 tSRA Status Register Access Time tCESR CE Setup before S.R. Read 100 100 ns tVCS VCC Setup Time 2 2 us 30 0.3 30 100 75 P/N:PM0511 MAX. UNIT us us 90 ns REV. 2.4, NOV. 06, 2001 24 MX29L1611 AC CHARACTERISTICS -- WRITE/ERASE/PROGRAM OPERATIONS 29L1611-10 29L1611-12 MIN. SYMBOL DESCRIPTION MIN. MAX. tWC Write Cycle Time 100 120 ns tAS Address Setup Time 0 0 ns tAH Address Hold Time 60 60 ns tDS Data Setup Time 50 50 ns tDH Data Hold Time 10 10 ns tOES Output Enable Setup Time 0 0 ns tCES CE Setup Time 0 0 ns tGHWL Read Recover TimeBefore Write 0 0 tCS CE Setup Time 0 0 ns tCH CE Hold Time 0 0 ns tWP Write Pulse Width 60 60 ns tWPH Write Pulse Width High 40 40 ns tBALC Byte(Word) Address Load Cycle 0.3 tBAL Byte(Word) Address Load Time 100 tSRA Status Register Access Time tCESR CE Setup before S.R. Read 100 100 ns tVCS VCC Setup Time 2 2 us 30 0.3 30 100 100 P/N:PM0511 MAX. UNIT us us 120 ns REV. 2.4, NOV. 06, 2001 25 MX29L1611 Figure 7. COMMAND WRITE TIMING WAVEFORMS tCH CE tOES tCS OE tWC WE tGHWL tWPH tWP tAS ADDRESSES tAH VALID tDH tDS HIGH Z DATA (D/Q) VCC DIN tVCS NOTE: 1. BYTE pin is treated as address pin All timing specifications for BYTE pin are the same as those for address pin. 2. BYTE pin is sampled on the falling edge of WE or CE during the 3rd command write bus cycle; for real world application, BYTE pin should be either static high(word mode) or static low(byte mode). P/N:PM0511 REV. 2.4, NOV. 06, 2001 26 MX29L1611 Figure 8. AUTOMATIC PAGE PROGRAM TIMING WAVEFORMS A0~A5 AAH 55H 55H A-1 (byte mode only) 55H A6~A14 tAS 2AH 55H Word offset Address Last Word offset Address Low/High Byte Select Last Low/High Byte Select Page Address tAH Page Address A15~A19 tWC tBAL tBALC CE tWP tWPH WE tCES OE tDS tDH tSRA DATA AAH 55H A0H Write Last Write Data Data SRD NOTE: 1.Please refer to page 9 for detail page program operation. P/N:PM0511 REV. 2.4, NOV. 06, 2001 27 MX29L1611 Figure 9. AUTOMATIC SECTOR/CHIP ERASE TIMING WAVEFORMS A0~A14 5555H tAS 2AAAH 5555H 5555H 2AAAH */5555H tAH SA/* A15~A19 tCESR CE tWP tWPH WE tWC tCES OE tDS tDH tSRA AAH DATA 55H AAH 80H 55H 30H SRD NOTES: 1."*" means "don't care" in this diagram. 2."SA" means "Sector Adddress". P/N:PM0511 REV. 2.4, NOV. 06, 2001 28 MX29L1611 Figure 10. SECTOR PROTECTION ALGORITHM START, PLSCNT=0 Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 60H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Increment PLSCNT, To Protect Sector Again Write Data 20H, Sector Address* Read Status Register NO SR7 = 1 ? NO YES Protect Sector Operation Terminated PLSCNT YES = 25 ? NO Device Failed To Verify Protect Status ? YES Verify Protect Status Flow (Figure 12) NO Data = C2H ? YES Device Stays at Read S.R. Mode Write Data AAH Address 5555H NOTE : *Only the Top or the Bottom Sector Address is vaild in this feature. i.e. Sector Address = (A19,A18,A17,A16,A15) = 00000B or 11111B Write Data 55H Address 2AAAH Write Data 60H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 20H, Sector Address* Read Status Register SR7 = 1 ? NO YES Sector Protected,Operation Done, Device Stays at Verify Sector Protect Mode P/N:PM0511 REV. 2.4, NOV. 06, 2001 29 MX29L1611 Figure 11. SECTOR UNPROTECT ALGORITHM START, PLSCNT=0 Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 60H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Increment PLSCNT, To Unprotect Sector Again Write Data 40H, Sector Address* Read Status Register NO SR7 = 1 ? NO YES Unprotect Sector Operation Terminated PLSCNT = 25 ? YES NO Device Failed To Verify Protect Status ? YES Verify Protect Status Flow (Figure 12) NO Data = 00H ? YES Device Stays at Read S.R. Mode Write Data AAH Address 5555H NOTE : *Only the Top or the Bottom Sector Address is vaild in this feature. i.e. Sector Address = (A19,A18,A17,A16,A15) = 00000B or 11111B Write Data 55H Address 2AAAH Write Data 60H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 40H, Sector Address* Read Status Register SR7 = 1 ? NO YES Sector Unprotected,Operation Done, Device Stays at Verify Sector Protect Mode P/N:PM0511 REV. 2.4, NOV. 06, 2001 30 MX29L1611 Figure 12. VERIFY SECTOR PROTECT FLOW CHART START Write Data AAH, Address 5555H Write Data 55H, Address 2AAAH Write Data 90H, Address 5555H Ptoect Status Read* * 1. Protect Status: Data Outputs C2H as Protected Sector Verified Code. Data Outputs 00H as Unprotected Sector Verified Code. 2. Sepecified address will be either (A19,A18,A17,A16,A15,A1,A0) = (0000010) or (1111110), the rest of the address pins are don't care. 3. Silicon ID can be read via this Flow Chart. Refer to Table 4. P/N:PM0511 REV. 2.4, NOV. 06, 2001 31 MX29L1611 Figure 13. COMMAND WRITE TIMING WAVEFORMS(Alternate CE Controlled) tWH WE tOES tWS OE tWC CE tGHWL tCPH tCP tAS ADDRESSES tAH VALID tDH tDS HIGH Z DATA (D/Q) VCC DIN tVCS NOTE: 1. BYTE pin is treated as Address pin. All timing specifications for BYTE pin are the same as those for address pin. 2. BYTE pin is sampled on the falling edge of WE or CE during the 3rd command write bus cycle; for real world applicaton, BYTE oin should be either static high(word mode) or static low(byte mode). P/N:PM0511 REV. 2.4, NOV. 06, 2001 32 MX29L1611 Figure 14. AUTOMATIC PAGE PROGRAM TIMING WAVEFORM(Alternate CE Controlled) A0~A5 AAH 55H 55H A-1 ((Byte Mode Only) 55H A6~A14 tAS 2AH Word offset Address Last Word Offset Address Low/High Byte Select Last Low/High Byte Select Page Address 55H tAH Page Address A15~A19 tWC tBALC WE tCP tCPH tBAL CE(1) tCES OE tDS tDH tSRA AAH DATA 55H A0H Write Last Write Data Data SRD NOTE: 1.Please refer to page 9 for detail page program operation. P/N:PM0511 REV. 2.4, NOV. 06, 2001 33 MX29L1611 ERASE AND PROGRAMMING PERFORMANCE PARAMETER Chip/Sector Erase Time Page Programming Time Chip Programming Time Byte Program Time Erase/Program Cycles MIN. LIMITS TYP. 200 5 80 40 MAX. 2000 500 800 4000 10,000 UNITS ms ms sec us Cycles 1.All number are sampled, not 100% tested. 2.Typing values are measured at 25°C, VCC=3.3V LATCHUP CHARACTERISTICS Input Voltage with respect to GND on all pins except I/O pins Input Voltage with respect to GND on all I/O pins Current Includes all pins except Vcc. Test conditions: Vcc = 3.3V, one pin at a time. P/N:PM0511 MIN. -1.0V -1.0V -100mA MAX. 6.6V Vcc + 1.0V +100mA REV. 2.4, NOV. 06, 2001 34 MX29L1611 ORDERING INFORMATION PLASTIC PACKAGE PART NO. Access Time Operating Current Standby Current PACKAGE (ns) MAX.(mA) MAX.(uA) MX29L1611MC-75 75 50 20 44 Pin SOP MX29L1611MC-90 90 50 20 44 Pin SOP MX29L1611MC-10 100 50 20 44 Pin SOP MX29L1611MC-12 120 50 20 44 Pin SOP MX29L1611TC-75 75 50 20 48 Pin TSOP (Normal Type) MX29L1611TC-90 90 50 20 48 Pin TSOP (Normal Type) MX29L1611TC-10 100 50 20 48 Pin TSOP (Normal Type) MX29L1611TC-12 120 50 20 48 Pin TSOP (Normal Type) P/N:PM0511 REV. 2.4, NOV. 06, 2001 35 MX29L1611 PACKAGE INFORMATION 44-PIN PLASTIC SOP P/N:PM0511 REV. 2.4, NOV. 06, 2001 36 MX29L1611 48-PIN PLASTIC TSOP(NORMAL TYPE) P/N:PM0511 REV. 2.4, NOV. 06, 2001 37 MX29L1611 HISTORY STORY Revision Description Page 1.1 Correct Page Programming waveform and delete RY/BY,PWD wafewaves on Page 26 & Page 32 respetively 1.2 Revise page read speed to 30ns @CL=35pF on Page 1 & Page 19 Correct statement of ABORT MODE on Page 13. 1.3 Add 48 TSOP(I) package, and new read speed grade random access P1,2,21,24 120ns, page mode access 40ns 1.4 Modify the data for erase and programming performance P33 1.5 Add in ordering information P34 1.6 Revised Package Information P35,36 1.7 Revised random access time 100/120-->75/90 P1 Revised page mode access time 30/40-->25/30 P1 Revised device power supply VCC P4 Revised switching test circuits P19 Revised DC Characteristic Vcc=3.3V ±10%-->2.7V~3.6V P20 Revised AC Characteristic P21 Revised access time in package information P34 1.8 Revised Fast Pagemode Access Time : 25/30 -->30/35 P1 Add 48 TSOP(Reverse Type) 1.9 Modify AC Characteristics--tSRA MIN:75/90-->MAX:75/90 P24 2.0 Add in note in the AC Characteristics P21 2.1 Add 120ns in for fast random access time P1 Add MX29L1611-12 in AC Characteristics P21,24 Add MX29L1611MC-12 and MX29L1611TC-12 P34 2.2 Add 100ns in for fast random access time P1 Add MX29L1611-10 in AC Characteristics P21,25 Add MX29L1611MC-10 and MX29L1611TC-10 P34 2.3 Modify Switching Test Waveform Vcc/ 0 ---> 2.4V/0.45V P19 Modify Test Conditions : Input pulse levels: 0/Vcc ---> 0.45V/2.4V P21 Reference level for measuring timing Vcc/2 -->1.5V P21 2.4 Remove 48-pin Reverse TSOP in Package Information P37 P/N:PM0511 Date APR/10/1998 SEP/09/1998 NOV/26/1998 JUN/28/1999 JUL/15/1999 JUL/22/1999 DEC/03/1999 JAN/18/2000 FEB/10/2000 FEB/21/2000 FEB/29/2000 JUN/09/2000 JUN/22/2000 NOV/06/2001 REV. 2.4, NOV. 06, 2001 38 MX29L1611 MACRONIX INTERNATIONAL CO., LTD. HEADQUARTERS: TEL:+886-3-578-6688 FAX:+886-3-563-2888 EUROPE OFFICE: TEL:+32-2-456-8020 FAX:+32-2-456-8021 JAPAN OFFICE: TEL:+81-44-246-9100 FAX:+81-44-246-9105 SINGAPORE OFFICE: TEL:+65-348-8385 FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 MACRONIX AMERICA, INC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 39