STMicroelectronics M29W160DT90N6E 16 mbit (2mb x8 or 1mb x16, boot block) 3v supply flash memory Datasheet

M29W160DT
M29W160DB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 70ns
■
PROGRAMMING TIME
Figure 1. Packages
44
– 10µs per Byte/Word typical
■
35 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 32 Main Blocks
■
PROGRAM/ERASE CONTROLLER
1
TSOP48 (N)
12 x 20mm
SO44 (M)
– Embedded Program and Erase algorithms
■
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
FBGA
LFBGA48 (ZA)
8 x 6 solder balls
– Faster Production/Batch Programming
■
TEMPORARY BLOCK UNPROTECTION
MODE
■
SECURITY MEMORY BLOCK
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W160DT: 22C4h
– Bottom Device Code M29W160DB: 2249h
January 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/29
M29W160DT, M29W160DB
TABLE OF CONTENTS
SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SO Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
LFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Top Boot Block Addresses, M29W160DT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 3. Bottom Boot Block Addresses, M29W160DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Address Inputs (A0-A19). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Inputs/Outputs (DQ0-DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Inputs/Outputs (DQ8-DQ14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Input/Output or Address Input (DQ15A-1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reset/Block Temporary Unprotect (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ready/Busy Output (RB). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Byte/Word Organization Select (BYTE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
VCC Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Vss Ground.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Special Bus Operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Block Protection and Blocks Unprotection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 4. Bus Operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5. Bus Operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read/Reset Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Auto Select Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unlock Bypass Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Unlock Bypass Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Unlock Bypass Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Chip Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Block Erase Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/29
M29W160DT, M29W160DB
Erase Suspend Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Erase Resume Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Security Data Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 6. Security Memory Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 7. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 8. Commands, 8-bit mode, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 9. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 16
STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Data Polling Bit (DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Toggle Bit (DQ6).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Error Bit (DQ5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Erase Timer Bit (DQ3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Alternative Toggle Bit (DQ2).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 10. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 6. Data Polling Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 7. Data Toggle Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Read Mode AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Write AC Waveforms, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Reset/Block Temporary Unprotect AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline . . . . . . . . . . . . . . . . . 25
TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data . . . . . . . . . 25
SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline . . . . . . . . . . . . . . . . 26
LFBGA48 - 8 x 6 balls, 0.80 mm pitch, Bottom View Package Outline . . . . . . . . . . . . . . . . . . . . . . 27
LFBGA48 - 8 x 6 balls, 0.80mm pitch, Package Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . 27
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3/29
M29W160DT, M29W160DB
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4/29
M29W160DT, M29W160DB
SUMMARY DESCRIPTION
The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16)
non-volatile memory that can be read, erased and
reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode where it can be read in the same way
as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are written to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The blocks in the memory are asymmetrically arranged, see Tables 2 and 3, Block Addresses. The
first or last 64 Kbytes have been divided into four
additional blocks. The 16 Kbyte Boot Block can be
used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can
be used for parameter storage and the remaining
32K is a small Main Block where the application
may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.
They allow simple connection to most microprocessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm),
SO44 and LFBGA48 (0.8mm pitch) packages and
it is supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
VCC
20
15
A0-A19
DQ0-DQ14
W
E
DQ15A–1
M29W160DT
M29W160DB
G
BYTE
RB
RP
VSS
AI03843
A0-A19
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
(Not available on SO44 package)
BYTE
Byte/Word Organization Select
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
DU
Don’t Use as internally connected
Note: RB not available on SO44 package.
5/29
M29W160DT, M29W160DB
Figure 3. TSOP Connections
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
W
RP
NC
NC
RB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
Figure 4. SO Connections
48
12 M29W160DT 37
13 M29W160DB 36
24
25
AI03844
6/29
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
RP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
11 M29W160DT 34
12 M29W160DB 33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
24
21
22
23
AI03845
W
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
M29W160DT, M29W160DB
Figure 5. LFBGA Connections (Top view through package)
1
2
3
4
5
6
A
A3
A7
RB
W
A9
A13
B
A4
A17
DU
RP
A8
A12
C
A2
A6
A18
DU
A10
A14
D
A1
A5
DU
A19
A11
A15
E
A0
DQ0
DQ2
DQ5
DQ7
A16
F
E
DQ8
DQ10
DQ12
DQ14
BYTE
G
G
DQ9
DQ11
VCC
DQ13
DQ15
A–1
H
VSS
DQ1
DQ3
DQ4
DQ6
VSS
AI02985B
7/29
M29W160DT, M29W160DB
Table 2. Top Boot Block Addresses,
M29W160DT
Table 3. Bottom Boot Block Addresses,
M29W160DB
#
Size
(Kbytes)
Address Range
(x8)
Address Range
(x16)
#
Size
(Kbytes)
Address Range
(x8)
Address Range
(x16)
34
16
1FC000h-1FFFFFh
FE000h-FFFFF h
34
64
1F0000h-1FFFFFh
F8000h-FFFFFh
33
8
1FA000h-1FBFFFh
FD000h-FDFFFh
33
64
1E0000h-1EFFFFh
F0000h-F7FFFh
32
8
1F8000h-1F9FFFh
FC000h-FCFFFh
32
64
1D0000h-1DFFFFh
E8000h-EFFFFh
31
32
1F0000h-1F7FFFh
F8000h-FBFFFh
31
64
1C0000h-1CFFFFh
E0000h-E7FFFh
30
64
1E0000h-1EFFFFh
F0000h-F7FFFh
30
64
1B0000h-1BFFFFh
D8000h-DFFFF h
29
64
1D0000h-1DFFFFh
E8000h-EFFFFh
29
64
1A0000h-1AFFFFh
D0000h-D7FFFh
28
64
1C0000h-1CFFFFh
E0000h-E7FFFh
28
64
190000h-19FFFFh
C8000h-CFFFF h
27
64
1B0000h-1BFFFFh
D8000h-DFFFFh
27
64
180000h-18FFFFh
C0000h-C7FFFh
26
64
1A0000h-1AFFFFh
D0000h-D7FFFh
26
64
170000h-17FFFFh
B8000h-BFFFFh
25
64
190000h-19FFFFh
C8000h-CFFFFh
25
64
160000h-16FFFFh
B0000h-B7FFFh
24
64
180000h-18FFFFh
C0000h-C7FFFh
24
64
150000h-15FFFFh
A8000h-AFFFFh
23
64
170000h-17FFFFh
B8000h-BFFFFh
23
64
140000h-14FFFFh
A0000h-A7FFFh
22
64
160000h-16FFFFh
B0000h-B7FFFh
22
64
130000h-13FFFFh
98000h-9FFFF h
21
64
150000h-15FFFFh
A8000h-AFFFFh
21
64
120000h-12FFFFh
90000h-97FFFh
20
64
140000h-14FFFFh
A0000h-A7FFFh
20
64
110000h-11FFFFh
88000h-8FFFF h
19
64
130000h-13FFFFh
98000h-9FFFFh
19
64
100000h-10FFFFh
80000h-87FFFh
18
64
120000h-12FFFFh
90000h-97FFFh
18
64
0F0000h-0FFFFFh
78000h-7FFFF h
17
64
110000h-11FFFFh
88000h-8FFFFh
17
64
0E0000h-0EFFFFh
70000h-77FFFh
16
64
100000h-10FFFFh
80000h-87FFFh
16
64
0D0000h-0DFFFFh
68000h-6FFFF h
15
64
0F0000h-0FFFFFh
78000h-7FFFFh
15
64
0C0000h-0CFFFFh
60000h-67FFFh
14
64
0E0000h-0EFFFFh
70000h-77FFFh
14
64
0B0000h-0BFFFFh
58000h-5FFFF h
13
64
0D0000h-0DFFFFh
68000h-6FFFFh
13
64
0A0000h-0AFFFFh
50000h-57FFFh
12
64
0C0000h-0CFFFFh
60000h-67FFFh
12
64
090000h-09FFFFh
48000h-4FFFF h
11
64
0B0000h-0BFFFFh
58000h-5FFFFh
11
64
080000h-08FFFFh
40000h-47FFFh
10
64
0A0000h-0AFFFFh
50000h-57FFFh
10
64
070000h-07FFFFh
38000h-3FFFF h
9
64
090000h-09FFFFh
48000h-4FFFFh
9
64
060000h-06FFFFh
30000h-37FFFh
8
64
080000h-08FFFFh
40000h-47FFFh
8
64
050000h-05FFFFh
28000h-2FFFF h
7
64
070000h-07FFFFh
38000h-3FFFFh
7
64
040000h-04FFFFh
20000h-27FFFh
6
64
060000h-06FFFFh
30000h-37FFFh
6
64
030000h-03FFFFh
18000h-1FFFF h
5
64
050000h-05FFFFh
28000h-2FFFFh
5
64
020000h-02FFFFh
10000h-17FFFh
4
64
040000h-04FFFFh
20000h-27FFFh
4
64
010000h-01FFFFh
08000h-0FFFF h
3
64
030000h-03FFFFh
18000h-1FFFFh
3
32
008000h-00FFFFh
04000h-07FFFh
2
64
020000h-02FFFFh
10000h-17FFFh
2
8
006000h-007FFFh
03000h-03FFFh
1
64
010000h-01FFFFh
08000h-0FFFFh
1
8
004000h-005FFFh
02000h-02FFFh
0
64
000000h-00FFFFh
00000h-07FFFh
0
16
000000h-003FFFh
00000h-01FFFh
8/29
M29W160DT, M29W160DB
SIGNAL DESCRIPTIONS
See Figure 2, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connected to this device.
Address Inputs (A0-A19). The Address Inputs
select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sent to the Command Interface of the internal state
machine.
Data Inputs/Outputs (DQ8-DQ14). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation when BYTE
is High, VIH. When BYTE is Low, VIL, these pins
are not used and are high impedance. During Bus
Write operations the Command Register does not
use these bits. When reading the Status Register
these bits should be ignored.
Data Input/Output or Address Input (DQ15A-1).
When BYTE is High, VIH, this pin behaves as a
Data Input/Output pin (as DQ8-DQ14). When
BYTE is Low, VIL, this pin behaves as an address
pin; DQ15A–1 Low will select the LSB of the Word
on the other addresses, DQ15A–1 High will select
the MSB. Throughout the text consider references
to the Data Input/Output to include this pin when
BYTE is High and references to the Address Inputs to include this pin when BYTE is Low except
when stated explicitly otherwise.
Chip Enable (E). The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is
High, VIH, all other pins are ignored.
Output Enable (G). The Output Enable, G, controls the Bus Read operation of the memory.
Write Enable (W). The Write Enable, W, controls
the Bus Write operation of the memory’s Command Interface.
Reset/Block Temporary Unprotect (RP). The
Reset/Block Temporary Unprotect pin can be
used to apply a Hardware Reset to the memory or
to temporarily unprotect all Blocks that have been
protected.
A Hardware Reset is achieved by holding Reset/
Block Temporary Unprotect Low, VIL, for at least
tPLPX. After Reset/Block Temporary Unprotect
goes High, V IH, the memory will be ready for Bus
Read and Bus Write operations after tPHEL or
tRHEL, whichever occurs last. See the Ready/Busy
Output section, Table 18 and Figure 13, Reset/
Temporary Unprotect AC Characteristics for more
details.
Holding RP at VID will temporarily unprotect the
protected Blocks in the memory. Program and
Erase operations on all blocks will be possible.
The transition from VIH to VID must be slower than
tPHPHH.
Ready/Busy Output (RB). The Ready/Busy pin
is an open-drain output that can be used to identify
when the memory array can be read. Ready/Busy
is high-impedance during Read mode, Auto Select
mode
and
Erase
Suspend
mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy becomes high-impedance. See Table 18 and Figure
13, Reset/Temporary Unprotect AC Characteristics.
During Program or Erase operations Ready/Busy
is Low, VOL. Ready/Busy will remain Low during
Read/Reset commands or Hardware Resets until
the memory is ready to enter Read mode.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE). The
Byte/Word Organization Select pin is used to
switch between the 8-bit and 16-bit Bus modes of
the memory. When Byte/Word Organization Select is Low, VIL, the memory is in 8-bit mode, when
it is High, VIH, the memory is in 16-bit mode.
VCC Supply Voltage. The VCC Supply Voltage
supplies the power for all operations (Read, Program, Erase etc.).
The Command Interface is disabled when the VCC
Supply Voltage is less than the Lockout Voltage,
VLKO. This prevents Bus Write operations from accidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memory contents being altered will be invalid.
A 0.1µF capacitor should be connected between
the VCC Supply Voltage pin and the VSS Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during program and
erase operations, I CC3.
Vss Ground. The VSS Ground is the reference
for all voltage measurements.
9/29
M29W160DT, M29W160DB
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See
Tables 4 and 5, Bus Operations, for a summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, V IL, to Chip Enable
and Output Enable and keeping Write Enable
High, VIH. The Data Inputs/Outputs will output the
value, see Figure 10, Read Mode AC Waveforms,
and Table 15, Read AC Characteristics, for details
of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desired address on the Address Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus
Write operation. See Figures 11 and 12, Write AC
Waveforms, and Tables 16 and 17, Write AC
Characteristics, for details of the timing requirements.
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, VIH.
Standby. When Chip Enable is High, VIH, the
memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to the
Standby Supply Current, ICC2, Chip Enable should
be held within VCC ± 0.2V. For the Standby current
level see Table 14, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, ICC3, for Program or Erase operations until the operation completes.
Automatic Standby. If CMOS levels (VCC ± 0.2V)
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is reduced to the Standby Supply Current, ICC2. The
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations. Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block
Protection. These bus operations are intended for
use by programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Tables 4 and 5, Bus Operations.
Block Protection and Blocks Unprotection. Each
block can be separately protected against accidental Program or Erase. Protected blocks can be
unprotected to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on programming equipment and the other for in-system
use. For further information refer to Application
Note AN1122, Applying Protection and Unprotection to M29 Series Flash.
Table 4. Bus Operations, BYTE = VIL
Operation
E
G
Address Inputs
DQ15A–1, A0-A19
W
Data Inpu ts/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIL
V IH
Cell Address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL
Command Address
Hi-Z
Data Input
X
VIH
V IH
X
Hi-Z
Hi-Z
Standby
V IH
X
X
X
Hi-Z
Hi-Z
Read Manufacturer
Code
VIL
VIL
V IH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
20h
Read Device Code
VIL
VIL
V IH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
C4h (M29W160DT)
49h (M29W160DB)
Output Disable
Note: X = VIL or VIH.
10/29
M29W160DT, M29W160DB
Table 5. Bus Operations, BYTE = VIH
Operation
Address Inputs
A0-A19
Data Inpu ts/Outputs
DQ15A–1, DQ14-DQ0
E
G
W
Bus Read
VIL
VIL
V IH
Cell Address
Bus Write
VIL
VIH
VIL
Command Address
X
VIH
V IH
X
Hi-Z
Standby
V IH
X
X
X
Hi-Z
Read Manufacturer
Code
VIL
VIL
V IH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
0020h
Read Device Code
VIL
VIL
V IH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
22C4h (M29W160DT)
2249h (M29W160DB)
Output Disable
Data Output
Data Input
Note: X = VIL or VIH.
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus
Write operations will result in the memory returning to Read mode. The long command sequences
are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 7, or 8, depending on
the configuration that is being used, for a summary
of the commands.
Read/Reset Command. The Read/Reset command returns the memory to its Read mode where
it behaves like a ROM or EPROM, unless stated
otherwise (see Security Data command). It also
resets the errors in the Status Register. Either one
or three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Block Erase operation or following a Programming
or Erase error then the memory will take upto 10µs
to abort. During the abort period no valid data can
be read from the memory. Issuing a Read/Reset
command during a Block Erase operation will
leave invalid data in the memory.
Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are required to issue the Auto Select command. Once
the Auto Select command is issued the memory
remains in Auto Select mode until another command is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits
may be set to either VIL or VIH. The Manufacturer
Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read
operation with A0 = VIH and A1 = VIL. The other
address bits may be set to either VIL or VIH. The
Device Code for the M29W160DT is 22C4h and
for the M29W160DB is 2249h.
The Block Protection Status of each block can be
read using a Bus Read operation with A0 = VIL,
A1 = VIH, and A12-A19 specifying the address of
the block. The other address bits may be set to either VIL or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs
DQ0-DQ7, otherwise 00h is output.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal
state machine and starts the Program/Erase Controller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is never read and
no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 9. Bus Read operations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
11/29
M29W160DT, M29W160DB
ter. A Read/Reset command must be issued to reset the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’. One of the Erase Commands must be used to set all the bits in a block or
in the whole memory from ’0’ to ’1’.
Unlock Bypass Command. The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memory. When the access time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these commands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock Bypass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
Unlock Bypass Program Command. The Unlock Bypass Program command can be used to
program one address in memory at a time. The
command requires two Bus Write operations, the
final write operation latches the address and data
in the internal state machine and starts the Program/Erase Controller.
The Program operation using the Unlock Bypass
Program command behaves identically to the Program operation using the Program command. A
protected block cannot be programmed; the operation cannot be aborted and the Status Register is
read. Errors must be reset using the Read/Reset
command, which leaves the device in Unlock Bypass Mode. See the Program command for details
on the behavior.
Unlock Bypass Reset Command. The Unlock
Bypass Reset command can be used to return to
Read/Reset mode from Unlock Bypass Mode.
Two Bus Write operations are required to issue the
Unlock Bypass Reset command.
Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus
Write operations are required to issue the Chip
Erase Command and start the Program/Erase
Controller.
If any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation appears to start but will terminate within about 100µs,
leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the erase operation the memory will ignore
all commands. It is not possible to issue any command to abort the operation. Typical chip erase
times are given in Table 9. All Bus Read operations during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs.
12/29
See the section on the Status Register for more
details.
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All previous
data is lost.
Block Erase Command. The Block Erase command can be used to erase a list of one or more
blocks. Six Bus Write operations are required to
select the first block in the list. Each additional
block in the list can be selected by repeating the
sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts
the Program/Erase Controller about 50µs after the
last Bus Write operation. Once the Program/Erase
Controller starts it is not possible to select any
more blocks. Each additional block must therefore
be selected within 50µs of the last block. The 50µs
timer restarts when an additional block is selected.
The Status Register can be read after the sixth
Bus Write operation. See the Status Register for
details on how to identify if the Program/Erase
Controller has started the Block Erase operation.
If any selected blocks are protected then these are
ignored and all the other selected blocks are
erased. If all of the selected blocks are protected
the Block Erase operation appears to start but will
terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored.
During the Block Erase operation the memory will
ignore all commands except the Erase Suspend
and Read/Reset commands. Typical block erase
times are given in Table 9. All Bus Read operations during the Block Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Block Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode.
The Block Erase Command sets all of the bits in
the unprotected selected blocks to ’1’. All previous
data in the selected blocks is lost.
Erase Suspend Command. The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
M29W160DT, M29W160DB
Write operation. During Erase Suspend the reset
command is ignored.
The Program/Erase Controller will suspend within
15µs of the Erase Suspend Command being issued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start immediately when the Erase Resume Command is
issued. It will not be possible to select any further
blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. Reading from blocks that
are being erased will output the Status Register. It
is also possible to enter the Auto Select mode: the
memory will behave as in the Auto Select mode on
all blocks until a Read/Reset command returns the
memory to Erase Suspend mode.
Erase Resume Command. The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
Security Data Command. The Security Data
command can be used to read the Security Memory Block. The Security Memory Block is a block of
256 words that is usually undefined. Volume customers can request that a unique security code is
pre-programmed by ST into each part. One Bus
Write operation is required to issue the Security
Data command. Once the Security Data command
is issued Bus Read operations read from the Security Memory Block instead of the memory array,
until another command is issued.
After issuing the Security Data command from
Auto Select mode a Read/Reset command will return to Auto Select mode. An invalid command will
return to Read mode.
Valid addresses for the Security Memory Block are
given in Table 6, Security Memory Block Addresses. Although the address for the Security Data
command is Don’t Care, it is necessary to choose
an address outside the Security Memory Block for
correct operation.
Table 6. Security Memory Block Addresses
Size
(words)
Address Range
(x8)
Address Range
(x16)
256
000000h-0001FFh
000000h-0000FFh
13/29
M29W160DT, M29W160DB
Command
Length
Table 7. Commands, 16-bit mode, BYTE = VIH
Bus Write Operations
1st
2nd
Addr
Data
1
X
F0
3
555
Auto Select
3
Program
3rd
4th
Addr
Data
Addr
Data
AA
2AA
55
X
F0
555
AA
2AA
55
555
90
4
555
AA
2AA
55
555
A0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
Block Erase
6+
555
AA
2AA
55
555
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Security Data
1
X
B8
5th
Addr
Data
PA
PD
80
555
80
555
6th
Addr
Data
Addr
Data
AA
2AA
55
555
10
AA
2AA
55
BA
30
Read/Reset
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional
Bus Write Operations until Timeout Bit is set.
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-erasing blocks as normal.
Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode.
Security Data. After the Security Data command read the Security Memory Block. Use an address outside the Security Memory Block
when issuing the command.
14/29
M29W160DT, M29W160DB
Command
Length
Table 8. Commands, 8-bit mode, BYTE = VIL
Bus Write Operations
1st
2nd
Addr
Data
1
X
F0
3
AAA
Auto Select
3
Program
3rd
4th
Addr
Data
Addr
Data
AA
555
55
X
F0
AAA
AA
555
55
AAA
90
4
AAA
AA
555
55
AAA
A0
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
Block Erase
6+
AAA
AA
555
55
AAA
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Security Data
1
X
B8
5th
Addr
Data
PA
PD
80
AAA
80
AAA
6th
Addr
Data
Addr
Data
AA
555
55
AAA
10
AA
555
55
BA
30
Read/Reset
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional
Bus Write Operations until Timeout Bit is set.
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-erasing blocks as normal.
Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode.
Security Data. After the Security Data command read the Security Memory Block. Use an address outside the Security Memory Block
when issuing the command.
15/29
M29W160DT, M29W160DB
Table 9. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Min
Typ (1)
Chip Erase (All bits in the memory set to ‘0’)
12
Chip Erase
25
Block Erase (64 Kbytes)
Typical after
100k W/E Cycles (1)
Max
Unit
sec
120
sec
0.8
6
sec
Program (Byte or Word)
10
200
µs
Chip Program (Byte by Byte)
25
120
sec
Chip Program (Word by Word)
12
60
sec
Program/Erase Cycles (per Block)
100,000
25
cycles
Note: 1. TA = 25°C, VCC = 3.3V.
STATUS REGISTER
Bus Read operations from any address always
read the Status Register during Program and
Erase operations. It is also read during Erase Suspend when an address within a block being erased
is accessed.
The bits in the Status Register are summarized in
Table 10, Status Register Bits.
Data Polling Bit (DQ7). The Data Polling Bit can
be used to identify whether the Program/Erase
Controller has successfully completed its operation or if it has responded to an Erase Suspend.
The Data Polling Bit is output on DQ7 when the
Status Register is read.
During Program operations the Data Polling Bit
outputs the complement of the bit being programmed to DQ7. After successful completion of
the Program operation the memory returns to
Read mode and Bus Read operations from the address just programmed output DQ7, not its complement.
During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state of
DQ7. After successful completion of the Erase operation the memory returns to Read Mode.
In Erase Suspend mode the Data Polling Bit will
output a ’1’ during a Bus Read operation within a
block being erased. The Data Polling Bit will
change from a ’0’ to a ’1’ when the Program/Erase
Controller has suspended the Erase operation.
Figure 6, Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Address is the address being programmed or an
address within the block being erased.
16/29
Toggle Bit (DQ6). The Toggle Bit can be used to
identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is
output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle
Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations at any address. After
successful completion of the operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will
output when addressing a cell within a block being
erased. The Toggle Bit will stop toggling when the
Program/Erase Controller has suspended the
Erase operation.
Figure 7, Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit.
Error Bit (DQ5). The Error Bit can be used to
identify errors detected by the Program/Erase
Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to
write the correct data to the memory. If the Error
Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit
is output on DQ5 when the Status Register is read.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’ and attempting to do so may
or may not set DQ5 at ‘1’. In both cases, a successive Bus Read operation will show the bit is still ‘0’.
One of the Erase commands must be used to set
all the bits in a block or in the whole memory from
’0’ to ’1’.
M29W160DT, M29W160DB
Erase Timer Bit (DQ3). The Erase Timer Bit can
be used to identify the start of Program/Erase
Controller operation during a Block Erase command. Once the Program/Erase Controller starts
erasing the Erase Timer Bit is set to ’1’. Before the
Program/Erase Controller starts the Erase Timer
Bit is set to ’0’ and additional blocks to be erased
may be written to the Command Interface. The
Erase Timer Bit is output on DQ3 when the Status
Register is read.
Alternative Toggle Bit (DQ2). The Alternative
Toggle Bit can be used to monitor the Program/
Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the
Status Register is read.
During Chip Erase and Block Erase operations the
Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations from addresses
within the blocks being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive
Bus Read operations from addresses within the
blocks being erased. Bus Read operations to addresses within blocks not being erased will output
the memory cell data as if in Read mode.
After an Erase operation that causes the Error Bit
to be set the Alternative Toggle Bit can be used to
identify which block or blocks have caused the error. The Alternative Toggle Bit changes from ’0’ to
’1’ to ’0’, etc. with successive Bus Read Operations from addresses within blocks that have not
erased correctly. The Alternative Toggle Bit does
not change if the addressed block has erased correctly.
Table 10. Status Register Bits
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Program
Any Address
DQ7
Toggle
0
–
–
0
Program During Erase
Suspend
Any Address
DQ7
Toggle
0
–
–
0
Program Error
Any Address
DQ7
Toggle
1
–
–
0
Chip Erase
Any Address
0
Toggle
0
1
Toggle
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
0
Toggle
0
Non-Erasing Block
0
Toggle
0
0
No Toggle
0
Erasing Block
0
Toggle
0
1
Toggle
0
Non-Erasing Block
0
Toggle
0
1
No Toggle
0
Erasing Block
1
No Toggle
0
–
Toggle
1
Block Erase
Erase Suspend
Non-Erasing Block
Data read as normal
1
Good Block Address
0
Toggle
1
1
No Toggle
0
Faulty Block Address
0
Toggle
1
1
Toggle
0
Erase Error
Note: Unspecified data bits should be ignored.
17/29
M29W160DT, M29W160DB
Figure 6. Data Polling Flowchart
Figure 7. Data Toggle Flowchart
START
START
READ
DQ5 & DQ6
READ DQ5 & DQ7
at VALID ADDRESS
READ DQ6
DQ7
=
DATA
YES
DQ6
=
TOGGLE
NO
NO
NO
YES
DQ5
=1
NO
YES
READ DQ7
at VALID ADDRESS
DQ5
=1
YES
READ DQ6
TWICE
DQ7
=
DATA
YES
DQ6
=
TOGGLE
NO
FAIL
PASS
AI03598
NO
YES
FAIL
PASS
AI01370B
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings” table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 11. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (1)
Input or Output Voltage
–0.6 to 4
V
VCC
Supply Voltage
–0.6 to 4
V
V ID
Identification Voltage
–0.6 to 13.5
V
Note: 1. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
18/29
M29W160DT, M29W160DB
DC AND AC PARAMETERS
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 12, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
M29W160D
Parameter
Unit
70
90
Supply Voltage (V CC)
3.0 to 3.6
2.7 to 3.6
V
Ambient Operating Temperature (TA)
–40 to 85
–40 to 85
°C
30
30
pF
Input Rise and Fall Times
≤ 10
≤ 10
ns
Input Pulse Voltages
0 to 3
0 to 3
V
1.5
1.5
V
Load Capacitance (CL)
Input and Output Timing Ref. Voltages
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
0.8V
3V
1N914
1.5V
0V
3.3kΩ
AI01417
DEVICE
UNDER
TEST
OUT
CL = 30pF
CL includes JIG capacitance
AI03846
Table 13. Capacitance
Symbol
C IN
COUT
Parameter
Input Capacitance
Output Capacitance
Test Condition
Min
Max
Unit
V IN = 0V
6
pF
VOUT = 0V
12
pF
Note: Sampled only, not 100% tested.
19/29
M29W160DT, M29W160DB
Table 14. DC Characteristics
Symbol
Parameter
Test Condition
Min
Max
Unit
0V ≤ V IN ≤ VCC
±1
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
0V ≤ VOUT ≤ VCC
±1
µA
I CC1
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
10
mA
I CC2
Supply Current (Standby)
E = VCC ± 0.2V,
RP = VCC ± 0.2V
100
µA
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
ICC3 (1)
V IL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7VCC
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 1.8mA
0.45
V
VOH
Output High Voltage
IOH = –100µA
VID
Identification Voltage
IID
Identification Current
V LKO (1)
Program/Erase Lockout Supply
Voltage
Note: Sampled only, not 100% tested.
20/29
VCC – 0.4
11.5
A9 = VID
1.8
V
12.5
V
100
µA
2.3
V
M29W160DT, M29W160DB
Figure 10. Read Mode AC Waveforms
tAVAV
A0-A19/
A–1
VALID
tAVQV
tAXQX
E
tELQV
tEHQX
tELQX
tEHQZ
G
tGLQX
tGHQX
tGLQV
tGHQZ
DQ0-DQ7/
DQ8-DQ15
VALID
tBHQV
BYTE
tELBL/tELBH
tBLQZ
AI02922
Table 15. Read AC Characteristics
M29W160D
Symbol
Alt
Parameter
Test Condition
Unit
70
90
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL,
G = VIL
Min
70
90
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL,
G = VIL
Max
70
90
ns
tELQX (1)
tLZ
Chip Enable Low to Output Transition
G = VIL
Min
0
0
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
Max
70
90
ns
tGLQX (1)
tOLZ
Output Enable Low to Output Transition
E = VIL
Min
0
0
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
Max
30
35
ns
tEHQZ (1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
Max
25
30
ns
tGHQZ (1)
tDF
Output Enable High to Output Hi-Z
E = VIL
Max
25
30
ns
tEHQX
tGHQX
tAXQX
tOH
Chip Enable, Output Enable or Address
Transition to Output Transition
Min
0
0
ns
tELBL
tELBH
tELFL
tELFH
Chip Enable to BYTE Low or High
Max
5
5
ns
tBLQZ
tFLQZ
BYTE Low to Output Hi-Z
Max
25
30
ns
tBHQV
tFHQV
BYTE High to Output Valid
Max
30
40
ns
Note: Sampled only, not 100% tested.
21/29
M29W160DT, M29W160DB
Figure 11. Write AC Waveforms, Write Enable Controlled
tAVAV
A0-A19/
A–1
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7/
DQ8-DQ15
tWHDX
VALID
VCC
tVCHEL
RB
tWHRL
AI02923
Table 16. Write AC Characteristics, Write Enable Controlled
M29W160D
Symbol
Alt
Parameter
Unit
70
90
tAVAV
tWC
Address Valid to Next Address Valid
Min
70
90
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
0
ns
tWLWH
t WP
Write Enable Low to Write Enable High
Min
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
Min
45
50
ns
t WHDX
tDH
Write Enable High to Input Transition
Min
0
0
ns
t WHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
30
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
Min
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
Min
45
50
ns
Output Enable High to Write Enable Low
Min
0
0
ns
tGHWL
tWHGL
tOEH
Write Enable High to Output Enable Low
Min
0
0
ns
tWHRL (1)
tBUSY
Program/Erase Valid to RB Low
Max
30
35
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
Min
50
50
µs
Note: Sampled only, not 100% tested.
22/29
M29W160DT, M29W160DB
Figure 12. Write AC Waveforms, Chip Enable Controlled
tAVAV
A0-A19/
A–1
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7/
DQ8-DQ15
tEHDX
VALID
VCC
tVCHWL
RB
tEHRL
AI02924
Table 17. Write AC Characteristics, Chip Enable Controlled
M29W160D
Symbol
Alt
Parameter
Unit
70
90
tAVAV
tWC
Address Valid to Next Address Valid
Min
70
90
ns
tWLEL
t WS
Write Enable Low to Chip Enable Low
Min
0
0
ns
tELEH
tCPH
Chip Enable High to Chip Enable High
Min
45
50
ns
tDVEH
tDS
Input Valid to Chip Enable High
Min
45
50
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
ns
t EHWH
tWH
Chip Enable High to Write Enable High
Min
0
0
ns
tEHEL
tCP
Chip Enable Low to Chip Enable Low
Min
30
30
ns
tAVEL
tAS
Address Valid to Chip Enable Low
Min
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
Min
45
50
ns
Output Enable High Chip Enable Low
Min
0
0
ns
tGHEL
tEHGL
tOEH
Chip Enable High to Output Enable Low
Min
0
0
ns
tEHRL (1)
tBUSY
Program/Erase Valid to RB Low
Max
30
35
ns
tVCHWL
tVCS
VCC High to Write Enable Low
Min
50
50
µs
Note: Sampled only, not 100% tested.
23/29
M29W160DT, M29W160DB
Figure 13. Reset/Block Temporary Unprotect AC Waveforms
W, E, G
tPHWL, tPHEL, tPHGL
RB
tRHWL, tRHEL, tRHGL
tPLPX
RP
tPHPHH
tPLYH
AI02931
Table 18. Reset/Block Temporary Unprotect AC Characteristics
M29W160D
Symbol
tPHWL (1)
tPHEL
Alt
Parameter
Unit
70
90
tRH
RP High to Write Enable Low, Chip Enable Low,
Output Enable Low
Min
50
50
ns
tRB
RB High to Write Enable Low, Chip Enable Low,
Output Enable Low
Min
0
0
ns
tPLPX
tRP
RP Pulse Width
Min
500
500
ns
t PLYH (1)
tREADY
RP Low to Read Mode
Max
10
10
µs
tPHPHH (1)
tVIDR
RP Rise Time to VID
Min
500
500
ns
tPHGL (1)
tRHWL (1)
tRHEL (1)
tRHGL
(1)
Note: Sampled only, not 100% tested.
24/29
M29W160DT, M29W160DB
PACKAGE MECHANICAL
Figure 14. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
A1
TSOP-a
α
L
Note: Drawing is not to scale.
Table 19. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.20
Max
0.0472
A1
0.05
0.15
0.0020
0.0059
A2
0.95
1.05
0.0374
0.0413
B
0.17
0.27
0.0067
0.0106
C
0.10
0.21
0.0039
0.0083
D
19.80
20.20
0.7795
0.7953
D1
18.30
18.50
0.7205
0.7283
E
11.90
12.10
0.4685
0.4764
–
–
–
–
L
0.50
0.70
0.0197
0.0276
α
0°
5°
0°
5°
N
48
e
CP
0.50
0.0197
48
0.10
0.0039
25/29
M29W160DT, M29W160DB
Figure 15. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline
A2
A
C
B
CP
e
D
N
E
H
1
A1
α
L
SO-b
Note: Drawing is not to scale.
Table 20. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
Max
A
2.42
A1
A2
Min
Max
2.62
0.0953
0.1031
0.22
0.23
0.0087
0.0091
2.25
2.35
0.0886
0.0925
B
0.50
0.0197
C
0.10
0.25
0.0039
0.0098
D
28.10
28.30
1.1063
1.1142
E
13.20
13.40
0.5197
0.5276
–
–
–
–
15.90
16.10
0.6260
0.6339
e
1.27
H
0.0500
L
0.80
–
–
0.0315
–
–
α
3°
–
–
3°
–
–
N
CP
26/29
Typ
44
44
0.10
0.0039
M29W160DT, M29W160DB
Figure 16. LFBGA48 - 8 x 6 balls, 0.80 mm pitch, Bottom View Package Outline
D
D1
FD
FE
E
SD
SE
E1
ddd
BALL ”A1”
e
b
A2
A
A1
BGA-Z14
Note: Drawing is not to scale.
Table 21. LFBGA48 - 8 x 6 balls, 0.80mm pitch, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
A
A1
Max
Typ
Min
1.350
0.300
0.200
A2
0.350
0.0531
0.0118
0.0079
1.000
b
0.300
0.550
Max
0.0138
0.0394
0.0118
0.0217
D
8.000
–
–
0.3150
–
–
D1
4.000
–
–
0.1575
–
–
ddd
0.100
0.0039
e
0.800
–
–
0.0315
–
–
E
9.000
–
–
0.3543
–
–
E1
5.600
–
–
0.2205
–
–
FD
2.000
–
–
0.0787
–
–
FE
1.700
–
–
0.0669
–
–
SD
0.400
–
–
0.0157
–
–
SE
0.400
–
–
0.0157
–
–
27/29
M29W160DT, M29W160DB
PART NUMBERING
Table 22. Ordering Information Scheme
M29W160DB
Example:
90
N
1
T
Device Type
M29
Operating Voltage
W = VCC = 2.7 to 3.6V
Device Function
160D = 16 Mbit (2Mb x8 or 1Mb x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
70 = 70 ns
90 = 90 ns
Package
N = TSOP48: 12 x 20 mm
M = SO44
ZA = LFBGA48: 0.80mm pitch
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Optio n
T = Tape & Reel Packing
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
REVISION HISTORY
Table 23. Document Revision History
Date
Version
July 2000
-01
First Issue
1/12/01
-02
Document type: from Product Preview to Preliminary Data
28/29
Revision Details
M29W160DT, M29W160DB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners
 2001 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A .
www.st.com
29/29