ETL G2300 N - c h a n n e l e n h a n c e m e n t m o d e p o w e r m o s f e t Datasheet

Pb Free Plating Product
ISSUED DATE :2006/07/26
REVISED DATE :2006/11/09B
G2300
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
28m
6A
Description
The G2300 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2300 is universally used for all commercial-industrial surface mount applications.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Small Package Outline
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0°
10°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
3
Continuous Drain Current
1,2
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
20
±8
6
4.8
20
1.25
0.01
-55 ~ +150
Symbol
Rthj-a
Value
100
Unit
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
1/4
ISSUED DATE :2006/07/26
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.1
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.0
V
VDS=VGS, ID=250uA
IGSS
-
-
±100
nA
VGS= ±8V
-
-
1
uA
VDS=20V, VGS=0
-
-
25
uA
VDS=16V, VGS=0
-
-
28
-
-
38
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Total Gate Charge2
Qg
-
10
-
Gate-Source Charge
Qgs
-
3.6
-
Gate-Drain (“Miller”) Change
Qgd
-
2
-
Td(on)
-
8
-
Tr
-
6
-
Td(off)
-
19
-
Tf
-
7
-
Input Capacitance
Ciss
-
550
-
Output Capacitance
Coss
-
120
-
Reverse Transfer Capacitance
Crss
-
80
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
0.7
1.3
V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
nC
ID=6A
VDS=10V
VGS=4.5V
ns
VDD=10V
ID=1A
VGS=4.5V
RG=0.2
pF
VGS=0V
VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Test Conditions
IS=1.25A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
2/4
ISSUED DATE :2006/07/26
REVISED DATE :2006/11/09B
Characteristics Curve
Fig 1. Typical Output Characteristics
0.07
Fig 2. On-Resistance v.s. Drain Current
Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Source-Drain Diode Forward
Voltage
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
ISSUED DATE :2006/07/26
REVISED DATE :2006/11/09B
Fig 7. Gate Charge Characteristics
Fig 9. Transfer Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Single Pulse Power
Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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