Diodes SMD Type Schottky barrier(double) diodes BAS70W;BAS70-04W BAS70-05W;BAS70-06W Features Low forward voltage High breakdown voltage Guard ring protected Very small SMD package Low capacitance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Continuous reverse voltage VR 70 V Continuous forward current IF 70 mA Repetitive peak forward current IFRM Non-repetitive peak forward current IFSM Storage temperature T stg Junction temperature tp 1 s; ä tp 0.5 10 ms T amb Thermal resistance from junction to ambient R th j-a mA mA -65 +150 -65 +150 Tj Operating ambient temperature 70 100 150 Note 1 625 K/W E lectrical C haracteristics T a = 25 P aram eter S ym bol Forward V oltage VF R everse C urrent IR Cd M ax U nit 410 mV I F = 10 m A 750 mV I F = 15 m A 1 V V R = 50 V ; note 1 100 nA V R = 70 V ; note 1 10 IF = 5 m A 100 ps f = 1 M H z; V R = 0 2 pF C harge carrier life tim e (K rakauer m ethod) D iode capacitance C ondition IF = 1 m A A N ote 1. P ulse test: tp = 300 m s; d = 0.02. Marking Type BAS70W BAS70-04W BAS70-05W BAS70-06W Marking 73* 74* 75* 76* www.kexin.com.cn 1