IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP40N65F5,IKW40N65F5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C G C E G C E Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKW40N65F5 650V 40A 1.6V 175°C K40EF5 PG-TO247-3 IKP40N65F5 650V 40A 1.6V 175°C K40EF5 PG-TO220-3 2 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing PG-TO247-pinGCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 3 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration Maximumratings Parameter Symbol Value Unit Collector-emitter voltage VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 74.0 46.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 120.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 36.0 21.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 255.0 120.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C PG-TO247-pinGCE PG-TO220-3 260 260 °C M 0.6 Nm Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s Mounting torque, M3 screw Maximum of mounting processes: 3 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.60 K/W Diode thermal resistance, junction - case Rth(j-c) 1.80 K/W Thermal resistance junction - ambient Rth(j-a) 40 62 K/W PG-TO247-pinGCE PG-TO220-3 4 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 650 - - VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.60 1.80 1.90 2.10 - - 1.45 1.40 1.40 1.80 - 3.2 4.0 4.8 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S V V 40.0 µA 4000.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2500 - - 50 - - 9 - 95.0 - nC - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG VCC=520V,IC=40.0A, VGE=15V - Internal emitter inductance measured 5mm (0.197 in.) from case LE PG-TO247-pinGCE PG-TO220-3 - VCE=25V,VGE=0V,f=1MHz 13.0 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 13 - ns - 160 - ns - 16 - ns - 0.36 - mJ - 0.10 - mJ - 0.46 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. - 20 - ns - 4 - ns - 175 - ns - 10 - ns - 0.07 - mJ - 0.03 - mJ - 0.10 - mJ - 60 - ns - 0.45 - µC - 12.4 - A - -280 - A/µs - 33 - ns - 0.22 - µC - 10.6 - A - -1030 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=20.0A, diF/dt=1000A/µs Tvj=25°C, VR=400V, IF=5.0A, diF/dt=1000A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 20 - ns - 14 - ns - 185 - ns - 15 - ns - 0.50 - mJ - 0.16 - mJ - 0.66 - mJ - 18 - ns - 5 - ns - 220 - ns - 12 - ns - 0.14 - mJ - 0.05 - mJ - 0.19 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=30nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=150°C, VR=400V, IF=20.0A, diF/dt=1000A/µs Tvj=150°C, VR=400V, IF=5.0A, diF/dt=1000A/µs dirr/dt 7 - 85 - ns - 1.00 - µC - 17.0 - A - -220 - A/µs - 50 - ns - 0.50 - µC - 14.0 - A - -500 - A/µs Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 275 250 100 10 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 225 tp=1µs 10µs 50µs 100µs 1 200µs 200 175 150 125 100 75 500µs 50 DC 25 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V. RecommendeduseatVGE≥7.5V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 80 120 70 VGE=20V 60 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 50 40 30 20 18V 80 15V 12V 60 10V 8V 7V 40 6V 5V 20 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 8 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 120 120 Tj=25°C Tj=150°C 100 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE=20V 18V 80 15V 12V 60 10V 8V 7V 40 6V 80 60 40 5V 20 0 20 0 1 2 3 4 0 5 4.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.50 1000 IC=10A IC=20A IC=40A 2.25 td(off) tf td(on) tr 2.00 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 5.0 1.75 1.50 1.25 100 10 1.00 0.75 0.50 0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 20 40 60 80 100 120 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 9 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 5 15 25 35 45 55 65 75 100 10 1 85 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 100 125 150 175 8 typ. min. max. 5.0 Eoff Eon Ets 7 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 5.5 4.5 4.0 3.5 3.0 2.5 2.0 6 5 4 3 2 1 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 20 40 60 80 100 120 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.4mA) 10 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1.6 0.8 Eoff Eon Ets 0.7 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Eoff Eon Ets 0.6 0.5 0.4 0.3 0.2 0.1 5 15 25 35 45 55 65 75 0.0 85 25 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 125 150 175 130V 520V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 100 16 Eoff Eon Ets 0.8 0.7 0.6 0.5 0.4 0.3 0.2 12 10 8 6 4 2 0.1 0.0 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 1.0 0.9 50 Tvj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 0 20 40 60 80 100 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=40A) 11 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1E+4 1 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] Ciss Coss Crss C,CAPACITANCE[pF] 1000 100 10 1 0 5 10 15 20 25 D=0.5 0.2 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708 τi[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881 0.001 1E-6 30 0.1 0.1 1E-5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalresistance (D=tp/T) 1 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 0.001 1E-7 Tj=25°C, IF = 20A Tj=150°C, IF = 20A 120 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 130 110 100 90 80 70 60 50 i: 1 2 3 ri[K/W]: 0.6701584 0.775759 0.3540826 τi[s]: 3.4E-4 4.7E-3 0.04680901 1E-6 1E-5 1E-4 0.001 0.01 0.1 40 500 1 tp,PULSEWIDTH[s] 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 20. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 1.2 20 Tj=25°C, IF = 20A Tj=150°C, IF = 20A Tj=25°C, IF = 20A Tj=150°C, IF = 20A 19 Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 18 1.0 0.8 0.6 0.4 17 16 15 14 13 12 11 10 9 8 7 6 0.2 500 700 900 1100 1300 5 500 1500 700 900 1100 1300 diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Figure 22. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 0 1500 60 Tj=25°C, IF = 20A Tj=150°C, IF = 20A Tj=25°C Tj=150°C -50 -100 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] 50 -150 -200 -250 -300 40 30 20 10 -350 -400 500 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF,FORWARDVOLTAGE[V] Figure 23. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) Figure 24. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration 2.0 IF=10A IF=20A IF=40A VF,FORWARDVOLTAGE[V] 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 14 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration PG-TO247-3 15 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration PG-TO220-3 16 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration a a b b t 17 Rev.1.2,2013-12-18 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration RevisionHistory IKW40N65F5, IKP40N65F5 Revision:2013-12-18,Rev.1.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet 1.2 2013-12-18 New Marking Pattern WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 18 Rev.1.2,2013-12-18