CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN20NF06AJ3 BVDSS RDSON@VGS=10V, ID=30A ID@ TC=25°C, VGS=10V 60V 10.6 mΩ(typ) 60A Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant package • Repetitive Avalanche Rated • Fast Switching Characteristic Symbol Outline MTN20NF06AJ3 TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device Package TO-252 MTN20NF06AJ3-0-T3-G (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN20NF06AJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation (TC=25℃) Derates above 25°C Operating Junction and Storage Temperature Symbol Limits VDS VGS 60 ±20 60 42 240 30 386 9 110 0.73 -55~+175 ID (Note 1) (Note 1) (Note 2) (Note 1) IDM IAR EAS EAR PD Tj, Tstg Unit V A mJ W W/°C °C Note : *1. Repetitive Rating : Pulse width limited by maximum junction temperature *2. L=500μH, IAS=30A,VDD=25V, starting TJ=+25℃ Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Maximum Lead Temperature for Soldering purpose (Note) Symbol Rth,j-c Rth,j-a TJ Value 1.36 110 275 Unit °C/W °C Note : 1.6mm from case, for 10 seconds Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf MTN20NF06AJ3 Min. Typ. Max. Unit Test Conditions 60 2 - 0.06 13 10.6 4 ±100 1 25 14 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=25A VGS=±20V VDS =60V, VGS =0V VDS =48V, VGS =0V, TC=125°C VGS =10V, ID=30A - 53.5 12.9 16.6 29 18 50 10 - μA mΩ nC ID=60A, VDS=48V, VGS=10V ns VDS=30V, ID=30A, VGS=10V, RGS=4.7Ω CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 3180 160 81 - 20 19 50 200 1.5 - pF Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 3/9 VGS=0V, VDS=25V, f=1MHz A V ns nC IS=50A, VGS=0V IS=50A, dIF/dt=100A/μs, VGS=0V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTN20NF06AJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 100 ID, Drain Current(A) 80 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V VGS=6V 60 VGS=5.5V 40 20 VGS=5V 1.2 1.0 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 100 VGS=4.5V 10 VGS=10V 1 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 70 R DS(ON) , Normalized Static DrainSource On-State Resistance 80 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=30A 60 50 40 30 20 10 2.2 VGS=10V, ID=30A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 RDS(ON) @Tj=25°C : 10.6mΩ typ. 0.4 0 0 MTN20NF06AJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 8 6 4 VDS=48V ID=60A 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 5 10 15 20 25 30 35 40 45 50 55 60 Total Gate Charge---Qg(nC) Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 70 RDS(ON) Limit 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 10 μs 100μs 1ms 10 TC=25°C, Tj=175°C, VGS=10V,RθJC=1.36°C/W, single pulse 1 10ms 100ms DC 60 50 40 30 20 10 VGS=10V, RθJC=1.36°C/W 0 0.1 0.1 MTN20NF06AJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 6/9 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 120 100 VDS=10V PD, Power Dissipation(W) 90 ID, Drain Current (A) 80 70 60 50 40 30 20 100 80 60 40 20 10 0 0 0 2 4 6 8 VGS , Gate-Source Voltage(V) 0 10 25 50 75 100 125 150 TC, Case Temperature(℃) 175 200 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.RθJC (t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.36 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN20NF06AJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN20NF06AJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN20NF06AJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2017.04.12 Page No. : 9/9 TO-252 Dimension Marking: 4 Device Name CYS 20NF06 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 DIM A A1 B b b1 C C1 D D1 E Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN20NF06AJ3 CYStek Product Specification