FGA50N60LS General Description Features Fairchild's LS series product of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The LS series is especially designed for applications in medium frequencies such as switched reluctance motor controls, AC & DC motor controls, general inverters etc. • • • • Short circuit rated 10µs @ TC = 100°C, VGE = 15V Low saturation voltage : VCE(sat) = 1.6 V @ IC = 50A High input impedance Optimized for medium operating frequencies (1~5kHz) Applications Switched Reluctance Motor Controls , AC & DC motor controls, general purpose inverters,Robotics, and Servo controls C G E TO-3P G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA50N60LS 600 ± 20 100 50 150 10 240 96 -55 to +150 -55 to +150 Units V V A A A µs W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2003 Fairchild Semiconductor Corporation Typ. --- Max. 0.52 40 Units °C/W °C/W FGA50N60LS Rev. A FGA50N60LS IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 50mA, VCE = VGE IC = 50A, VGE = 15V IC = 80A, VGE = 15V 3.5 --- 5.5 1.6 1.96 7.5 1.8 -- V V V ---- 2660 250 78 ---- pF pF pF --------------- 54 96 146 326 1.1 3.2 4.3 56 87 134 575 1.2 5.0 6.2 --220 600 --6.0 --215 880 --8.7 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ©2003 Fairchild Semiconductor Corporation VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V, Inductive Load, TC = 125°C VCC =300 V, VGE = 15V = 100°C @ TC VCE = 300 V, IC = 50A, VGE = 15V Measured 5mm from PKG 10 -- -- µs ----- 167 27 68 14 240 35 100 -- nC nC nC nH FGA50N60LS Rev. A FGA50N60LS Electrical Characteristics of the IGBT T 20V 120 120 12V 100 Common Emitter VGE = 15V o TC = 25 C o TC = 125 C 140 Collector Current, IC [A] Collector Current, I C [A] Common Emitter o TC = 25 C 15V 100 10V 80 VGE = 8V 60 40 80 60 40 20 20 0 0 0 2 4 6 1 8 10 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 60 3.0 Vcc = 300V Load Current : peak of square wave Common Emitter VGE = 15V 50 100A 2.5 Load Current [A] Collector - Emitter Voltage, V CE [V] FGA50N60LS 140 2.0 50A 1.5 40 30 20 IC = 30A 10 1.0 Duty cycle : 50% o Tc = 100 C Power Dissipation = 48W 0 -50 0 50 100 150 0.1 1 o 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter o TC = 25 C Common Emitter o TC = 125 C Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] 1000 Frequency [kHz] Case Temperature, TC [ C] 16 12 8 100A 50A 4 IC = 30A 16 12 8 100A 50A 4 IC = 30A 0 0 0 4 8 12 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2003 Fairchild Semiconductor Corporation 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FGA50N60LS Rev. A 6000 Cies o 4000 Coes 3000 TC = 125 C Switching Time [ns] 5000 Capacitance [pF] Common Emitter VCC = 300V, VGE = +15V IC = 50A o TC = 25 C Common Emitter VGE =0V, f = 1MHz o TC = 25 C Cres 2000 Ton Tr 100 1000 0 1 10 10 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, VGE = +15V IC = 50A o TC = 25 C Common Emitter VCC = 300V, VGE = +15V IC = 50A o TC = 25 C 10000 o o Toff 1000 Tf Tf TC = 125 C Switching Loss [uJ] TC = 125 C Switching Time [ns] 100 Gate Resistance, RG [Ω] Collector - Emitter Voltage, VCE [V] Eoff Eoff Eon 100 1000 10 100 10 Gate Resistance, RG [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 1000 Common Emitter VGE = +15V, RG = 5.9Ω Toff Tf o TC = 25 C o TC = 125 C Ton Switching Time [ns] Switching Time [ns] 100 Gate Resistance, RG [Ω] Tr 100 Toff Tf 100 Common Emitter VGE = +15V, RG = 5.9Ω o TC = 25 C o TC = 125 C 10 10 10 20 40 60 80 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation 100 10 20 40 60 80 100 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FGA50N60LS Rev. A FGA50N60LS 1000 7000 FGA50N60LS 15 10000 o Tc=25 C 12 Eoff 1000 Eoff Common Emitter VGE = +15V, RG = 5.9Ω Eon 300V Gate-Emitter Voltage, V Switching Loss [uJ] GE (V) Common Emitter RL= 6Ω o 9 Vcc=100V 6 3 TC = 25 C o TC = 125 C Eon 0 100 10 20 40 60 200V 80 0 100 30 60 Collector Current, IC [A] 90 120 150 180 Gate Charge, Qg (nC) Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current IC MAX. (Pulsed) 50µs IC MAX. (Continuous) 100 100µs Collector Current, I C [A] Collector Current, I C [A] 100 1ms 10 DC Operation 10 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature 1 Safe Operating Area o VGE = 20V, TC = 100 C 1 0.1 0.1 1 10 100 1000 1 10 Collector - Emitter Voltage, VCE [V] 100 1000 Collector - Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Thermal Response [Zthjc] 10 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 0.01 t1 t2 0.01 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A FGA50N60LS Package Dimension TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I5