Anpec APV2002KI-TY Crystal oscillator Datasheet

APV2002
Crystal Oscillator
Features
General Description
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The APV2002 is a CMOS IC that integrates all circuit components required for a oscillator. It is a low
cost, low jitter, high performance oscillator, which
consists of low-current oscillator circuit and output
buffer. The IC also incorporates a high-precision, thinfilm feedback resistor and load capacitors with excellent frequency characteristics. It also offers frequency divider for application flexibility choice.
Single Chip XO
Up to 60MHz Square Wave
Load Capacitors Build-in
Feedback Resistor Build-in
3-State Output
High Reliability
CMOS/TTL Input Level
CMOS/TTL Output Duty Level
Fundamental Oscillator
Pin Assignment
Frequency Divider Build-in
2.7V to 5.5V Supply Voltage
High Stability Against Noise on VDD
XTB
1
8
XT
S0
2
7
OE
Chip Form and SOP-8 Package Available
APV 2002
S1
3
6
VDD
GND
4
5
QO
SOP − 8
Ordering Information
APV2002
Package Code
K : SOP-8
Y : CHIP FORM
Temp. Range
I : -40 to 85°C
Handling Code
TU : Tube
TY : Tray
TR : Tape & Reel
W : Wafer
Lead Free Code
L : Lead Free Device
Blank : Original Device
Lead Free Code
Handling Code
Temp. Range
Package Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
1
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APV2002
Pin Description
P in
Sym bol
F u n c tio n
1
XTB
C ry s ta l d riv e
2
S 0 (N o te 1 )
F re q u e n c y s e le c t p in 1
3
S1
F re q u e n c y s e le c t p in 2
4
GND
G ro u n d
5
QO
F re q u e n c y o u tp u t
6
VDD
Pow er
7
O E (N o te 2 )
O u tp u t e n a b le
8
XT
C ry s ta l fe e d b a c k
N o te 1 : P le a s e re fe r fre q u e n c y s e le c to r
N o te 2 : H ig h o r n o c o n n e ctio n : e n a b le , L o w : d is a b le
Electrical Characteristics
The following specifications apply for VDD = 5V unless otherwise noted.
Symbol
Parameter
Test Condition
Operating condition
VDD
Supply Voltage
Min.
4.5
Ambient Temperature
APV2002
Typ.
5
Max.
Unit
5.5
V
-40
85
°C
0.5
60
MHz
20
mA
DC characteristics
Freq
Crystal Frequency
IDD
Operating Current
VIN
Input Voltage
-0.5
VDD+0.5V
Output Voltage
-0.5
VDD+0.5V
VOUT
Crystal 50MHz , CL = 50pF
AC characteristics
Duty
Waveform Symmetry
40
50
60
%
Tr
Rise Time
0.5V to 4.5V , CL = 50pF
3
ns
Tf
Fall Time
4.5V to 0.5V , CL = 50pF
3
ns
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
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APV2002
Electrical Characteristics (Cont.)
The following specifications apply for VDD = 3.3V unless otherwise noted.
Symbol
Parameter
Test Condition
Operating condition
VDD
Supply Voltage
Min.
3.0
Ambient Temperature
APV2002
Typ.
3.3
Max.
Unit
3.6
V
-40
85
°C
0.5
60
MHz
20
mA
DC characteristics
Freq
Crystal Frequency
IDD
Operating Current
VIN
Input Voltage
-0.5
VDD+0.5V
Output Voltage
-0.5
VDD+0.5V
VOUT
Crystal 55MHz , CL = 50pF
AC characteristics
Duty
Waveform Symmetry
40
50
60
%
Tr
Rise Time
0.3V to 3.0V , CL = 50pF
3
ns
Tf
Fall Time
3.0V to 0.3V , CL = 50pF
3
ns
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
3
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APV2002
Pad Layout
1
11
2
10
3
9
4
8
7
5
6
Pad Description
Pad #
1
2
3
4
5
6
7
8
9
10
11
Symbol
XTB
OE
S0
S1
GND
C/T (Note3)
QO
NC (Note4)
VDD
OE
XT
Description
Crystal drive
Output enable
Frequency select pad1
Frequency select pad2
Ground
Duty cycle modulation
Frequency output
Reserve
Power
Output enable
Crystal feedback
Note3 : C/T-no connection or connect to VDD for above 30Meg XO; connect to GND for below 30Meg XO.
Note4 : NC-no connection
Frequency Selector
S1
X
X
O
O
S0
X
O
X
O
QO
Default
¡ 2Ò
¡ 4Ò
¡ 8Ò
Note5 : X-no connection , O-connect to GND
Note6 : This function for die use only
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
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APV2002
Pad Position
Y
1
11
2
10
3
9
4
8
7
5
6
x
(0 ,0 )
Die Size = 716.5um * 821.5um
Pad Size = 86um * 86um
Die Thickness = 250um
Pad #
Symbol
1
2
3
4
5
6
7
8
9
10
11
XTB
OEPAD
S0PAD
S1PAD
GND
TCBPAD
QO
NC
VDD
OEPAD
XT
Pad Center
X(um)
260
78
78
78
225,321
468
638
638
638,638
638
449
Y(um)
743
700
531
359
78,78
78
163
356
457,553
700
743
Note7 : Substrate should be connected to GND.
Note8 : VDD and GND are double pads.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
5
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APV2002
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
1. 27B S C
0. 50B S C
8°
8°
6
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APV2002
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Large Body
Small Body
Average ramp-up rate
3°C/second max.
(TL to TP)
Preheat
- Temperature Min (Tsmin)
100°C
- Temperature Mix (Tsmax)
150°C
- Time (min to max)(ts)
60-120 seconds
Tsmax to TL
- Ramp-up Rate
Tsmax to TL
- Temperature(TL)
183°C
- Time (tL)
60-150 seconds
Peak Temperature(Tp)
225 +0/-5°C
240 +0/-5°C
Time within 5°C of actual Peak
10-30 seconds
10-30 seconds
Temperature(tp)
Ramp-down Rate
6°C/second max.
6 minutes max.
Time 25°C to Peak Temperature
Pb-Free Assembly
Large Body
Small Body
3°C/second max.
150°C
200°C
60-180 seconds
3°C/second max
217°C
60-150 seconds
245 +0/-5°C
250 +0/-5°C
10-30 seconds
20-40 seconds
6°C/second max.
8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
7
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APV2002
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
Description
245°C, 5 SEC
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms, 1tr > 100mA
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
D1
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
2.1± 0.1 0.3±0.013
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
8
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APV2002
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Nov., 2002
9
www.anpec.com.tw
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