i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value Units V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 15 30 VEBO Emitter-Base Voltage 3.0 V Ic Collector Current - Continuous 50 mA Tj, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C V These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted RHJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RSJA Thermal Resistance, Junction to Ambient PD Max Characteristic Units PN918 350 2.8 125 'MMBT918 225 1.8 357 556 mW mW/°C 'CM °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors NPN RF Transistor (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS VcEO(SUS) Collector-Emitter Sustaining Voltage* lc = 3.0 mA, IB = 0 15 V(BR)CBO Collector-Base Breakdown Voltage lc= 1.0 uA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage le = 10nA, lc = 0 3.0 V ICBO Collector Cutoff Current VCB = 15V, I E = 0 VCB = 15V, T A =150°C V 1.0 MA HA 0.01 ON CHARACTERISTICS 20 hFE DC Current Gain lc = 3.0 rnA, VCE = 1.0V vcE(sat) Collector-Emitter Saturation Voltage l c = 10mA, IB = 1.0mA 0.4 V VeE(sat) Base-Emitter Saturation Voltage \ = 10mA, IB = 1.0mA 1.0 V SMALL SIGNAL CHARACTERISTICS ft Current Gain - Bandwidth Product Cobo Output Capacitance Cibo NF Noise Figure Input Capacitance lc = 4.0 mA, VCE = 10V, f= 100MHz VCB = 10V, IE = 0, f =1.0 MHz VCB = 0, IE = 0, f = 1.0MHz VBE = 0.5V, lc = 0, f = 1.0MHz 600 l c = 1.0mA, VCE = 6.0V, RG = 400H, f = 60 MHz MHz 1.7 3.0 pF pF 2.0 pF dB 6.0 FUNCTIONAL TEST Gpe Amplifier Power Gain Po Power Output T! Collector Efficiency Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0% V CB = 12V, lc = 6.0mA, f = 200 MHz VCB = 15V, lc = 8.0mA, f = 500 MHz VCB = 15V, lc = 8.0mA, f = 500 MHz 15 dB 30 mW 25 %