NEC HQ1F3M Compound transistor Datasheet

DATA SHEET
COMPOUND TRANSISTOR
HQ1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
• Up to 2A high current drives such as ICs, motors, and solenoids
available
• On-chip bias resistor
• Low power consumption during drive
HQ1 SERIES LISTS
Products
Marking
R1 (KΩ)
R2 (KΩ)
HQ1L2N
DP
0.47
1.0
HQ1A3M
DQ
1.0
1.0
HQ1F3M
DR
2.2
2.2
HQ1F3P
DS
2.2
10
HQ1L2Q
DT
0.47
4.7
HQ1F2Q
DU
0.22
2.2
HQ1A4A
DX
−
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−20
V
Collector to emitter voltage
VCEO
−20
V
Emitter to base voltage
VEBO
−10
V
IC(DC)
−2.0
A
IC(pulse) *
−3.0
A
Base current (DC)
IB(DC)
−0.04
A
Total power dissipation
PT **
2.0
W
Collector current (DC)
Collector current (Pulse)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
** When 0.7 mm × 16 cm ceramic board is used
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16183EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
HQ1 SERIES
HQ1L2N
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −20 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
50
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
150
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −2.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.7 A
−0.55
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
329
470
611
Ω
E-to-B resistance
R2
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
50
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −2.0 A
50
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.5 A
−0.4
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Low level input voltage
V
Input resistance
R1
0.7
1.0
1.3
kΩ
E-to-B resistance
R2
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1F3M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
80
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
150
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −2.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.3 A
−0.3
V
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Input resistance
R1
1.54
2.2
2.86
kΩ
E-to-B resistance
R2
1.54
2.2
2.86
kΩ
** PW ≤ 350 µs, duty cycle ≤ 2 %
2
−
Data Sheet D16183EJ1V0DS
HQ1 SERIES
HQ1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −20 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
150
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −2.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.3 A
−0.3
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
1.54
2.2
2.86
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
150
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −2.0 A
50
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.7 A
−0.55
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Low level input voltage
V
Input resistance
R1
329
470
611
Ω
E-to-B resistance
R2
3.29
4.7
6.11
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
80
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
150
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −2.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.7 A
−0.55
V
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
Input resistance
R1
154
220
286
kΩ
E-to-B resistance
R2
1.54
2.2
2.86
kΩ
** PW ≤ 350 µs, duty cycle ≤ 2 %
Data Sheet D16183EJ1V0DS
3
HQ1 SERIES
HQ1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
TYP.
VCB = −20 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −1.0 A
150
−
hFE3 **
VCE = −2.0 V, IC = −2.0 A
50
VCE(sat) **
IC = −1.0 A, IB = −20 mA
DC current gain
Collector saturation voltage
Low level input voltage
VIL **
−
−0.35
VCE = −5.0 V, IC = −100 µA
Input resistance
R1
−
E-to-B resistance
R2
7
** PW ≤ 350 µs, duty cycle ≤ 2 %
4
MIN.
Data Sheet D16183EJ1V0DS
−0.45
V
−0.3
V
−
−
Ω
10
13
kΩ
HQ1 SERIES
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Data Sheet D16183EJ1V0DS
5
HQ1 SERIES
• The information in this document is current as of July, 2001. The information is subject to change
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and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4