RoHS BAS116LT1 SURFACE MOUNT SWITCHING DIODE D T ,. L • Low Leakage Current Applications Package:SOT-23 • Medium Speed Switching Times ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Non-Repetitive Peak Symbol Reverse VRM Peak Repetitive Reverse Voltage VRRM working Peak Reverse Voltage VRWM Rating Unit 100 V 75 V Voltage DC Blocking Voltage VR Peak Forward Current IF 200 mAdc Continuous IFM 300 mAdc (Note) PD 300 mW Forward IC Current(Note) Power Dissipation 2.4 Derate Above 25 Junction Temperature Tj 150 Storage Temperature Tstg -50-150 Note:Diode Ceramic Substrate 10mm 8.0mm R T ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol C E L Forward Voltage Reverse Breakdown Voltage E Reverse Voltage Leakage Current J E Capacitance Reverse Recovery Time Note:Diode On Ceramic Substrate 10mm W O 0.7mm Min C O N mW/ Max Unit 0.9 V IF=1.0mA 1.0 V IF=10mA 1.1 V IF=50mA 1.25 V IF=150mA — Vdc I BR = 100 uAdc 5.0 uA VR=75V 80 nA VR=75V Tj=150 Cj 2.0 PF VR=0 f=1.0MHz Trr 3.0 uS IF=10mA to IR=10mA VF V (BR) 75 IR 8.0mm Test Conditions 0.7mm DEVICE MARKING: BAS116LT1=JV WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]