MOSFET SMD Type N-Channel MOSFET AO4314 (KO4314) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 20 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 6mΩ (VGS = 10V) ● RDS(ON) ＜ 8.5mΩ (VGS = 4.5V) 1 2 3 4 D Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 36 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID 219 IAS,IAR 35 PD RthJA RthJL V 20 16 IDM EAS,EAR Unit 61 4.2 2.7 A mJ W 30 60 ℃/W 15 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4314 (KO4314) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions ID=250 uA, VGS=0V Min Typ 36 Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) VDS=36V, VGS=0V 1 VDS=36V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=20A 1.2 ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=10V, VDS=5V VGS=0V, VDS=18V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=18V, ID=20A 1470 325 605 10 60 0.5 1.6 14 23 6 12 2.8 3.2 4.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4314 KC**** www.kexin.com.cn pF Ω nC 3.5 VGS=10V, VDS=18V, RL=0.9Ω, RGEN=3Ω ns 20.3 3.5 IF= 20A, dI/dt= 500A/us 12 24 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking S 980 Qgd trr mΩ A 90 td(on) Body Diode Reverse Recovery Time V 219 VDS=5V, ID=20A Turn-On DelayTime tf 2.3 8.5 Gate Drain Charge Turn-Off Fall Time nA 6 Qg Qgs uA ±100 9.5 TJ=125℃ VGS=4.5V, ID=20A On State Drain Current Unit V VGS=10V, ID=20A Forward Transconductance Max 18 36 nC 5.5 A 1 V MOSFET SMD Type N-Channel MOSFET AO4314 (KO4314) ■ Typical Characterisitics 100 100 10V 80 VDS=5V 4V 4.5V 80 3.5V 60 3V ID(A) ID (A) 60 40 20 40 125°C 20 VGS=2.5V 25°C 0 0 0 1 2 3 4 0 5 10 3 4 5 6 Normalized On-Resistance 2 8 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V 2 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 20 ID=20A 1.0E+01 15 1.0E+00 10 125°C IS (A) RDS(ON) (mΩ Ω) 1 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4314 (KO4314) ■ Typical Characterisitics 10 1800 1600 VDS=18V ID=20A 1400 Capacitance (pF) 8 VGS (Volts) 6 4 Ciss 1200 1000 Coss 800 600 400 2 Crss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 36 1000.0 TA=25°C 100.0 TA=100°C TA=150°C 10.0 10µs 100.0 TA=125°C ID (Amps) IAR (A) Peak Avalanche Current 1000.0 6 12 18 24 30 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 100µs 10.0 1ms 10ms 1.0 100ms 0.1 DC TJ(Max)=150°C TA=25°C 10s 0.0 1.0 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) . Figure 12: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 1000 MOSFET SMD Type N-Channel MOSFET AO4314 (KO4314) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5