Renesas BCR8PM-14LG Triac medium power use Datasheet

Preliminary Datasheet
BCR8PM-14LG
R07DS0143EJ0200
(Previous: REJ03G1559-0100)
Rev.2.00
Sep 17, 2010
Triac
Medium Power Use
Features




 The Product guaranteed maximum junction
temperature 150C
 Insulated Type
 Planar Type
 UL Recognized: Yellow Card No. E223904
IT (RMS) : 8 A
VDRM : 800 V (Tj = 125C)
IFGTI, IRGTI, IRGT III : 30 mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
2 3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
VDRM
Non-repetitive peak off-state voltageNote1
VDSM
R07DS0143EJ0200 Rev.2.00
Sep 17, 2010
Voltage class
14
800
700
840
Unit
Conditions
V
V
V
Tj = 125°C
Tj = 150°C
Page 1 of 7
BCR8PM-14LG
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Unit
A
Surge on-state current
ITSM
80
A
I2t
26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
W
W
V
A
°C
°C
g
V
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.6
Unit
mA
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 107°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1  T2  G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger currentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2/0.1
—
—
V
Rth (j-c)
—
—
4.3
°C/W
Tj = 125°C/150C,
VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/s
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0143EJ0200 Rev.2.00
Sep 17, 2010
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR8PM-14LG
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
2
Tj = 150°C
1
10
7
5
3
2
Tj = 25°C
100
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
60
50
40
30
20
10
2 3
5 7 10
1
2 3
5 7 10
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
–1
7 IFGT I IRGT I, IRGT III
VGD = 0.1V
5
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 7104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
70
Conduction Time (Cycles at 60Hz)
100
7
5
3
2
10
80
On-State Voltage (V)
3
2 VGM = 10V
101
7
5
3
2
90
0 0
10
103
7
5
3
2
102
7
5
2
Typical Example
IRGT III
IRGT I, IFGT I
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0143EJ0200 Rev.2.00
Sep 17, 2010
Transient Thermal Impedance (°C/W)
On-State Current (A)
3
2
Surge On-State Current (A)
100
10
7
5
102 2 3 5 7103 2 3 5 7 104
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR8PM-14LG
Preliminary
No Fins
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
14
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
2
4
6
8
10 12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
160
Ambient Temperature (°C)
Case Temperature (°C)
16
On-State Power Dissipation (W)
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1 1
160
120 120 t2.3
120
100 100 t2.3
100
60 60 t2.3
80
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
20
0
0
10 12 14 16
All fins are black painted
aluminum and greased
140
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
Maximum On-State Power Dissipation
3
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS0143EJ0200 Rev.2.00
Sep 17, 2010
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR8PM-14LG
Preliminary
103
Latching Current vs.
Junction Temperature
Typical Example
Latching Current (mA)
7
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
103
7
5
3
2
Distribution
102
7
5
3
2
T2+, G–
Typical Example
101
7
5
3 T +, G+
2 2– – Typical Example
T2 , G
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
160
140
Typical Example
Tj = 150°C
120
100
80
60
III Quadrant
40
20
I Quadrant
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0143EJ0200 Rev.2.00
Sep 17, 2010
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5 Minimum
Characteristics
3
2
Value
100
7 0
10
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR8PM-14LG
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj = 150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
3
2
Minimum
Characteristics
Value
0
10
7 0
10
5 7 101
2 3
2 3
5 7 102
103
7
5
Typical Example
IFGT I
IRGT I
3
2
IRGT III
2
10
7
5
3
2
101 0
10
5 7 101
2 3
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
Test Procedure II
330Ω
C0
C1 = 0.1 to 0.47μF
R1 = 47 to 100Ω
R0
C0 = 0.1μF
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0143EJ0200 Rev.2.00
Sep 17, 2010
Page 6 of 7
BCR8PM-14LG
Preliminary
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2±0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
BCR8PM-14LG
BCR8PM-14LG-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0143EJ0200 Rev.2.00
Sep 17, 2010
Page 7 of 7
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