IK Semicon IK3466D Ic for ac/dc converter with builtâ in power dmos transistor with operating frequency 132 â± 8 khz Datasheet

TECHNICAL DATA
IC for AC/DC Converter with built–in Power DMOS
Transistor with Operating Frequency 132 ± 8 kHz
IK3466
Functional equivalent of TNY266 (Power Integrations)
Description
IK3466 is IC for AC/DC converter with build–in power
switch with operating frequency 132 ± 8 kHz realized on the
base of high-voltage BiCDMOS process.
IC performs driving of power built in MOSFET switch,
quantity of energy transferred to load is regulated by means
of MOSFET on-time. So output voltage practically doesn’t
depend from load.
The IC is purposed for adapter battery chargers of the
mobile phones, reserve power supply of PC, TV-sets, ACadapters, electrical equipment control units, Integrated
Services Digital Network (ISDN) or Digital Subscriber Line
(DSL) network termination.
ORDERING INFORMATION
IK3466N Plastic
IK3466D SOIC
ORDERING INFORMATION
Device
IK3466N
IK3466D
IK3466DT
Operating
Temperature Range
Package
Packing
ТА = -40… + 125 С
DIP-8
SOP-8
SOP-8
Tube
Tube
Tape& Reel
Features

Programmable line under-voltage detect circuit
prevents power on/off glitches and minimizes
quantity of external components

132 kHz operation frequency

High output voltage stability

Simple ON/OFF control, no loop compensation
needed

No load consumption < 50 mW with bias winding
and < 250 mW without bias winding at 265 V (AC)
input

High input (supply) voltage makes IC ideal for
charger applications

High bandwidth provides fast turn on with no
overshoot

Built-in current limit and thermal protection circuits
provide high safety

Built-in automatic restart circuit provides short circuit
and open loop protection

Undervoltage detection function
Pin Configuration
2012, April Ver. 00
IK3466
BYPASS
01
240uA
G1
DRAIN
Regulator
5,8 V
03
Line under voltage
50uA G2
Error
A3
+
1
Autorestart
counter
A7
-
VD1
Current limit
unit
Reset
6,3V
5,8V
4,8V
A9
-
A1
&
+
Enable
Jitter
VT1
1,0V+UT
Clock
EN/UV
Thermal
shutdown
VT5
A8
&
DCMAX
02
VT2 1,0V
Oscilator
A2
1
VT3
&
1
VT4
T1
A4
S
Q
R
Q
A5
A6
&
Leading
edge
blanking
05
04
SOURCE
A1 – A6, A8 – logic elements;
A7 –dual-threshold comparator;
A9 – current limit comparator;
G1, G2 – DC current source;
T1 – trigger;
VD1 – Zener diode;
VT1 – VT4 - MOS transistors
VT5 – high voltage output n-channel DMOS transistor
Fig. 1 – Electric block diagram
2012, April Ver. 00
IK3466
Table 2 - Absolute Maximum Ratings
Parameter
Symbol
Target
Unit
VD
DRAIN lead supply voltage
Min
-0,3
IDMAX
Peak current, DRAIN lead,
-
560
mA
VEN/UV
EN/UV lead voltage
-0,3
9
V
IEN/UV
EN/UV lead current
-
100
mA
-0,3
9
VBP
Tstg
BYPASS lead voltage
Storage temperature
-60
Max
700
V
V
o
150
C
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Table 3 – Recommended Operation Mode
Parameter
Symbol
Norm
Unit
VDS
DRAIN lead supply voltage
Min
50
Max
700
V
IDS
Peak current, DRAIN lead,
-
375
mA
VBP
BYPASS lead voltage
-
6,15
V
ТJ
Junction temperature
-40*
125
o
C
________
* Ambient temperature
Table 3 – Electric Parameters IK3466 .
o
( ТJ - 40* … +125 C, SOURCE = 0V , unless otherwise specified)
Parameter
Operating frequency
Maximum duty cycle
Measurement
mode
Control function
o
fOSC
ТJ = 25 C
S1 open
DCMAX
Symbol
EN/UV pin turnoff threshold
current
EN/UV pin voltage
VEN
DRAIN supply current
IS1
IDIS
IS2
IEN/UV = -125 uA
IEN/UV = 25 uA
VEN/UV=0 V
EN/UV open
(MOSFET
Switching)
Notes 1, 2
Target
Min.
Max.
124
140
62
68
-300
-170
0,4
1,3
1,5
2,7
500
Unit
kHz
%
A
V
A
320
2012, April Ver. 00
IK3466
Table 3 continued
Parameter
Symbol
BYPASS pin charge current
ICH1
ICH2
BYPASS pin voltage
BYPASS pin voltage
hysteresis
EN/UV pin line under-voltage
threshold current
Protection circuit
Current limit
Mode of
measurements
VBP = 0 V,
TJ = 25 oC
Note 3
VBP = 4 V,
o
TJ = 25 C
Note 3
Target
Min.
Max.
mA
-7,5
-2,5
-4,5
-1,5
VBP
Note 3
5,6
6,15
VBPH
-
0,8
1,2
ILUV
ТJ = 25°C
44
54
325
375
ILIMIT
di/dt = 70 mA/s
Initial current limit
IINIT
ТJ = 25°C
0.65 x
ILIMIT(MIN)
Leading edge blanking time
tLEB
ТJ = 25°C
Note 4
170
Thermal Shutdown
Temperature
tSD
-
125
ON-state switch resistance
Off-state switch drain current
Breakdown voltage
DRAIN pin supply voltage
EN/UV pin output signal delay
Unit
V
V
A
mA
mA
ns
o
Output parameters
o
ТJ = 25 C
I D=
RDS(ON)
35mA ТJ = 100oC
VBP = 6.2 V,
VEN/UV = 0 V,
IDSS
VDS = 560 V,
TJ = 125oC
VBP = 6.2 V,
BVDSS
VEN/UV = 0 V,
TJ = 25oC, Note 5
tEN/UV
150
16
24
C

A
-
50
700
-
50
-
10
V
V
s
NOTES:
1. Total current consumption is the sum of IS1 and IDSS when EN/UV pin is shorted to ground (MOSFET not
switching) and the sum of IS2 and IDSS when EN/UV pin is open (MOSFET switching).
2. Consumption current measurement during the output MOSFET is switching can be performed at 6.1 V on
BYPASS pin.
3. BP pin is not purposed for sourcing supply current to external circuitry.
4. This parameter is derived from characterization.
5. Shutdown voltage can be verified under the specification with minimum of BVDSS on an inclined DRAIN pin
voltage closely, but not exceeding minimum of BVDSS
6. Parameters are guaranteed for constant junction temperature ТJ. Measurements of parameters have to be
processed in pulse modes.
_______________
* Ambient temperature
2012, April Ver. 00
IK3466
Table 4 – Typical Electric Parameters of IK3466
o
(on default TA = 25 C, SOURCE = 0 V, unless otherwise specified)
Parameter
Max deviation
Current limit delay
Thermal shutdown hysteresis
Rise Time
Fall Time
Output disable setup time
Auto-Restart ON-Time
Auto-Restart Duty Cycle
Symbol
Mode of measurement
tILD
ТJ = 25oC, Note 1, 2
tR
tF
Measured in a typical
feedback IC application
tDST
tAR
DCAR
ТJ = 25oC, Note 3
Typical
value
8
150
70
50
50
0,5
50
5,6
Unit
kHz
ns
o
C
ns
ns
s
ms
%
Note
1. This parameter is derived from characterization.
2. This parameter is derived from the change in current limit measured at 1x and 4x of the di/dt shown in the
ILIMIT specification.
3. Auto-restart on time has the same temperature characteristics as the oscillator (inversely proportional to
frequency).
2012, April Ver. 00
IK3466
Operation Description
Unlike conventional PWM (Pulse width modulator) controllers, IK3466 uses a simple ON/OFF
control to regulate the output voltage. Figure 1 shows the electric block diagram.
The IK3466 consists of
 132kHz oscillator ,
 Enable circuit (sense and logic),
 Voltage regulator 5.8 V
 Under-voltage circuit
 Leading edge circuit
 Current limit circuit
 Temperature protection circuit
 Auto-restart counter
The oscillator frequency is internally set to 132 kHz. Two signals are generated from the
oscillator: the maximum duty cycle signal (DCMAX) and the Clock signal that indicates the start of
each cycle.
The oscillator contain built-in circuitry that introduces a small amount of frequency jitter, typically 8
kHz peak-to-peak, to minimize EMI emission. The modulation rate of the frequency jitter is set to
1 kHz to optimize EMI reduction for both average and quasi-peak emissions. The frequency jitter
should be measured with the oscilloscope synchronized at the falling edge of the waveform.
The enable input circuit at the EN/UV pin consists of a low impedance source follower
output set at 1.0 V. Under most operating conditions (except when close to noload), the low
impedance of the source follower keeps the voltage on the EN/UV pin from going much below 1.0
V in the disabled state. This improves the response time of the optocoupler
that is usually connected to this pin.
The 5.8 V regulator charges the bypass capacitor connected to the BYPASS pin to 5.8 V
by drawing a current from the voltage on the DRAIN pin, whenever the MOSFET is off. The
BYPASS pin is the internal supply voltage node for the IK3466. When the transistor VT5 is on, the
IK3466operates from the energy stored in the bypass capacitor. Extremely low power consumption
of the internal circuitry allows to operate continuously from current it takes from the DRAIN pin. A
bypass capacitor value of 0.1 F is sufficient for both high frequency decoupling and energy
storage.
In addition, there is a 6.3 V shunt regulator clamping the BYPASS pin at 6.3 V when
current is provided to the BYPASS pin through an external resistor.
The BYPASS pin under-voltage sensing circuit disables the transistor VT5 when the
BYPASS pin voltage drops below 4.8 V. Once the BYPASS pin voltage drops below 4.8 V, it must
rise back to 5.8 V to enable (turn-on) the transistor VT5.
The over temperature protection circuit disables the output power transistor VT5. To
prevent cyclic fault action the over temperature protection circuit has temperature hysteresis about
70oC. A large temperature hysteresis (~70oC) guarantees prevention of overheating of the PCB
under continuous fault condition.
The current limit circuit senses the current in the transistor VT5. When this current exceeds
the internal threshold (ILIMIT), the e transistor VT5 is turned off to the end of that cycle.
The current limit circuit reduces the current limit threshold under medium and light loads.
The leading edge blanking circuit inhibits the current limit comparator for a short time
(tLEB) after the transistor VT5 is
turned on. This leading edge blanking time has been set so that current spikes caused by
capacitance and secondary-side rectifier reverse recovery time will not cause untimely termination
of the switching pulse.
In the event of a fault condition such as output overload, output short circuit, or an open
loop condition, the IK3466enters into auto-restart mode.
If the EN/UV pin is not pulled low for 50 ms, the transistor VT5 switching is normally
disabled for 850 ms (except in the case of line under-voltage condition in which case it is disabled
until the condition is removed). The auto-restart alternately enables and disables the switching of
the transistor VT5 until the fault condition is removed.
2012, April Ver. 00
IK3466
T1 – pulse transformer;
V1 – optoelectronic device with phototransistor;
VD1, VD2 – diodes;
VD3 – zener diode
Fig. 2 – Typical application
2012, April Ver. 00
IK3466
Typical Performance Characteristics
Fig. 3 – Average operating frequency fOSC vs.temperature.Tj
Fig. 4 – DRAIN consumption current IS vs DRAIN supply voltage VD
2012, April Ver. 00
IK3466
Fig. 5 –Power dissipation Ptot vs DRAIN supply voltage VD
2012, April Ver. 00
IK3466
N SUFFIX PLASTIC DIP
(MS – 001BA)
A
Dimension, mm
5
8
B
1
4
F
Symbol
MIN
MAX
A
8.51
10.16
B
6.1
7.11
C
L
C
5.33
D
0.36
0.56
F
1.14
1.78
-T- SEATING
PLANE
N
G
M
K
H
D
0.25 (0.010) M
J
T
NOTES:
1. Dimensions “A”, “B” do not include mold flash or protrusions.
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
G
2.54
H
7.62
J
0°
10°
K
2.92
3.81
L
7.62
8.26
M
0.2
0.36
N
0.38
D SUFFIX SOIC
(MS - 012AA)
Dimension, mm
A
8
5
B
H
1
G
P
4
D
K
MIN
MAX
A
4.8
5
B
3.8
4
C
1.35
1.75
D
0.33
0.51
F
0.4
1.27
R x 45
C
-T-
Symbol
SEATING
PLANE
J
F
0.25 (0.010) M T C M
NOTES:
1. Dimensions A and B do not include mold flash or protrusion.
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side
for A; for B ‑ 0.25 mm (0.010) per side.
M
G
1.27
H
5.72
J
0°
8°
K
0.1
0.25
M
0.19
0.25
P
5.8
6.2
R
0.25
0.5
2012, April Ver. 00
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