ZP DMG3414U N-channel enhancement mode mosfet Datasheet

DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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•
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•
•
•
•
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Low On-Resistance
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25mΩ @ VGS = 4.5V
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29mΩ @ VGS = 2.5V
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37mΩ @ VGS = 1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
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Weight: 0.008 grams (approximate)
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Drain
D
Gate
TOP VIEW
Maximum Ratings
S
G
Source
Internal Schematic
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Units
V
V
IDM
Value
20
±8
4.2
3.2
30
Symbol
PD
RθJA
TJ, TSTG
Value
0.78
162
-55 to +150
Unit
W
°C/W
°C
TA = 25°C
TA = 70°C
Pulsed Drain Current (Note 4)
ID
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
3. Repetitive rating, pulse width limited by junction temperature.
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DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
@TA = 25°C unless otherwise specified
TJ = 25°C
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.5
⎯
mΩ
|Yfs|
⎯
0.9
25
29
37
⎯
V
RDS (ON)
⎯
19
22
28
7
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.2A
VGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2.0A
VDS = 10V, ID = 4A
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
829.9
85.3
81.2
9.6
1.5
3.5
8.1
8.3
40.1
9.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
Test Condition
VDS = 10V, VGS = 0V
f = 1.0MHz
VGS = 4.5V, VDS = 10V, ID = 8.2A
VDD = 10V, VGS = 4.5V,
RL = 10Ω, RG = 6Ω, ID = 1A
4. Short duration pulse test used to minimize self-heating effect.
[email protected]
www.zpsemi.com
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