Diode Semiconductor Korea BY550-50 --- BY550-1000 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A PLASTIC SILICON RECTIFIERS FEATURES Low cost Diffused junction DO - 27 Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.041 ounces, 1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 550-50 BY BY BY BY BY BY UNITS 550-100 550-200 550-400 550-600 550-800 550-1000 Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 5.0 A IFSM 300.0 A VF 1.1 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ=125 Maximum instantaneous forw ard voltage @ 5.0 A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 IR 10.0 Typical junction capacitance (Note1) CJ 80 Typical thermal resistance (Note2) RθJA 15 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range A 100.0 pF ／Ｗ NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.diode.kr BY550-50 --- BY550-1000 Diode Semiconductor Korea FIG.2 -- TYPICAL FORWARD DERATING CURVE TJ=250 C Pulse Width =300us 0.1 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.5 1.25 1.0 0.75 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.5 0.25 0 25 50 75 100 125 150 175 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.3 -- PEAK FORWARD SURGE CURRENT FIG.4--TYPICAL JUNCTION CAPACITANCE 450 400 TJ=125 8.3ms Single Half Sine-Wave 350 300 250 200 150 100 50 1 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE,PF AMPERES 1.0 AVERAGE FORWARD CURRENT AMPERES 10 PEAK FORWARD SURGE CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT FIG.1 -- TYPICAL FORWARD CHARACTERISTICS 1000 600 400 TJ=25 200 100 40 20 10 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr