Rohm DAN217 Switching diode Datasheet

Data Sheet
Switching Diode
DAN217
Applications
Ultra high speed switching
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Features
1) Small mold type. (SMD3)
2) High reliability.
+0.1
-0.05
2.9±0.2
各リードとも
Each
lead has same dimension
同寸法
+0.1
0.15 -0.06
+0.2
2.8±0.2
1.6-0.1
(3)
0.8MIN.
0~0.1
(1)
0.95
0.8±0.1
0.95
Structure
1.1±0.2
0.01
1.9±0.2
SMD3
0.3~0.6
(2)
Construction
Silicon epitaxial planar
0.95
1.0MIN.
0.4
2.4
1.9
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
weekcode
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Limits
3.2±0.1
8.0±0.2
0~0.5
φ1.05MIN
4.0±0.1
3.2±0.1
5.5±0.2
3.2±0.1
3.5±0.05
1.75±0.1
4.0±0.1
1.35±0.1
Unit
V
V
mA
mA
A
mW
°C
°C
80
80
300
100
4
200
150
55 to 150
Min.
Typ.
Max.
Unit
Conditions
IF=100mA
-
-
1.2
V
Reverse current
IR
-
-
0.1
μA
VR=70V
Capacitance between terminals
Reverse recovery time
Ct
-
-
3.5
pF
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B
Data Sheet
DAN217
Ta=150℃
10000
Ta=75℃
Ta=125℃
Ta=150℃
Ta=-25℃
1
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0.1
10
20 30 40 50 60 70
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
80
REVERSE CURRENT:IR(nA)
940
930
920
910
AVE:921.7mV
900
Ta=25℃
VR=80V
n=10pcs
80
70
60
50
40
AVE:9.655nA
30
20
8
7
6
5
4
AVE:1.17pF
3
2
10
1
0
0
VF DISPERSION MAP
Ct DISPERSION MAP
IR DISPERSION MAP
20
1cyc
Ifsm
8.3ms
10
5
AVE:3.50A
0
5
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
9
8
7
6
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
10
15
5
4
3
2
1
Ifsm
4
8.3ms 8.3ms
1cyc
3
2
1
AVE:1.93ns
0
0
1
IFSM DISRESION MAP
trr DISPERSION MAP
t
10
1
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
9
100
ガラスエポキシ基板実装時
Mounted
on epoxy board
IM=1mA
IM=100mA
10
IF=10mA
IF=10A
1ms1mstimetime
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
20
Ta=25℃
VR=6V
f=1MHz
n=10pcs
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
90
Ta=25℃
IF=100mA
n=30pcs
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
100
950
1
0.1
0
0 100 200 300 400 500 600 700 800 900 100
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
f=1MHz
0.01
0.1
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
Ta=125℃
1000
Ta=25℃
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
100
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
7
6
5
AVE:2.54kV
4
3
AVE:0.97kV
2
1
300us
300us
1
0.001
8
0
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.06 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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