Data Sheet Switching Diode DAN217 Applications Ultra high speed switching Dimensions (Unit : mm) Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) High reliability. ＋0.1 －0.05 2.9±0.2 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.15 －0.06 ＋0.2 2.8±0.2 1.6－0.1 (3) 0.8MIN. 0～0.1 (1) 0.95 0.8±0.1 0.95 Structure 1.1±0.2 0.01 1.9±0.2 SMD3 0.3～0.6 (2) Construction Silicon epitaxial planar 0.95 1.0MIN. 0.4 2.4 1.9 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 weekcode Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Limits 3.2±0.1 8.0±0.2 0～0.5 φ1.05MIN 4.0±0.1 3.2±0.1 5.5±0.2 3.2±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA mA A mW °C °C 80 80 300 100 4 200 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B Data Sheet DAN217 Ta=150℃ 10000 Ta=75℃ Ta=125℃ Ta=150℃ Ta=-25℃ 1 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 80 REVERSE CURRENT:IR(nA) 940 930 920 910 AVE:921.7mV 900 Ta=25℃ VR=80V n=10pcs 80 70 60 50 40 AVE:9.655nA 30 20 8 7 6 5 4 AVE:1.17pF 3 2 10 1 0 0 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 20 1cyc Ifsm 8.3ms 10 5 AVE:3.50A 0 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 10 15 5 4 3 2 1 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 9 100 ｶﾞﾗｽｴﾎﾟｷｼ基板実装時 Mounted on epoxy board IM=1mA IM=100mA 10 IF=10mA IF=10A 1ms1mstimetime ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 20 Ta=25℃ VR=6V f=1MHz n=10pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 90 Ta=25℃ IF=100mA n=30pcs 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 100 950 1 0.1 0 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) f=1MHz 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=125℃ 1000 Ta=25℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 7 6 5 AVE:2.54kV 4 3 AVE:0.97kV 2 1 300us 300us 1 0.001 8 0 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A