SMD Efficient Fast Recovery Rectifier COMCHIP www.comchiptech.com CEFL101 Thru CEFL105 Reverse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features DO-213AB (Plastic Melf) Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop 0.205(5.2) 0.022(0.55) Max. 0.195(4.8) Mechanical Data 0.105(2.67) 0.095(2.40) Case: Mini-SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.116 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics Parameter Symbol CEFL 101 CEFL 102 CEFL 103 CEFL 104 CEFL 105 Unit Max. Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 V Max. DC Blocking Voltage V DC 50 100 200 400 600 V V RMS 35 70 140 280 420 V Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) I FSM Max. Average Forward Current Io Max. Instantaneous Forward Current at 2.0 A VF Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C IR 30 A 1.0 A 0.875 25 1.25 35 50 V nS 5.0 250 uA 50 C/W C Typical. Thermal Resistance (Note 1) R Operating Junction Temperature Tj -55 to +150 Storage Temperature T STG -55 to +150 JL 1.1 C Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. MDS0210022B Page 1 SMD Efficient Fast Recovery Rectifier COMCHIP www.comchiptech.com Rating and Characteristic Curves (CEFL101 Thru CEFL105) Fig.2 - Forward Characteristics Fig. 1 - Reverse Characteristics 100 10 Tj=125 C Forward current ( A ) Reverse Current ( uA ) CEFL101-103 10 Tj=75 C 1.0 Tj=25 C 0.1 CEFL104 1.0 0.1 CEFL105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0. 01 0 0.001 15 30 45 60 75 90 105 120 135 150 0 0.2 0.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance Fig. 4 - Non Repetitive Forward Surge Current f=1MHz and applied 4VDC reverse voltage Junction Capacitance (pF) Tj=25 C 25 20 CEFL101-103 15 10 50 Peak Surge Forward Current ( A ) 35 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 CEFL104-105 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 5 0 0 0.01 0.1 1.0 10 100 1 Reverse Voltage (V) 5 10 50 1 00 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.8 trr 10W NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE Average Forward Current ( A ) 50W NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 2.4 2.0 1.6 1.2 0.8 Single Phase Half Wave 60Hz 0.4 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm MDS0210022B Page 2