Comchip CEFL104 Smd efficient fast recovery rectifier Datasheet

SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
CEFL101 Thru CEFL105
Reverse Voltage: 50 - 600 Volts
Forward Current: 1.0 Amp
Features
DO-213AB (Plastic Melf)
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
0.205(5.2)
0.022(0.55)
Max.
0.195(4.8)
Mechanical Data
0.105(2.67)
0.095(2.40)
Case: Mini-SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.116 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
CEFL
101
CEFL
102
CEFL
103
CEFL
104
CEFL
105
Unit
Max. Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
V
Max. DC Blocking Voltage
V DC
50
100
200
400
600
V
V RMS
35
70
140
280
420
V
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
I FSM
Max. Average Forward Current
Io
Max. Instantaneous Forward Current
at 2.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100 C
IR
30
A
1.0
A
0.875
25
1.25
35
50
V
nS
5.0
250
uA
50
C/W
C
Typical. Thermal Resistance (Note 1)
R
Operating Junction Temperature
Tj
-55 to +150
Storage Temperature
T STG
-55 to +150
JL
1.1
C
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
MDS0210022B
Page 1
SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (CEFL101 Thru CEFL105)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
10
Tj=125 C
Forward current ( A )
Reverse Current ( uA )
CEFL101-103
10
Tj=75 C
1.0
Tj=25 C
0.1
CEFL104
1.0
0.1
CEFL105
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
0. 01
0
0.001
15
30 45 60 75 90 105 120 135 150
0 0.2
0.4
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
f=1MHz and applied
4VDC reverse voltage
Junction Capacitance (pF)
Tj=25 C
25
20
CEFL101-103
15
10
50
Peak Surge Forward Current ( A )
35
30
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
CEFL104-105
8.3mS Single Half Sine
Wave JEDEC methode
40
30
Tj=25 C
20
10
5
0
0
0.01
0.1
1.0
10
100
1
Reverse Voltage (V)
5
10
50
1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
2.8
trr
10W
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
Average Forward Current ( A )
50W
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
2.4
2.0
1.6
1.2
0.8
Single Phase
Half Wave 60Hz
0.4
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
MDS0210022B
Page 2
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