PD - 96404A
AUTOMOTIVE GRADE
AUIRFS3307Z
AUIRFSL3307Z
Features
l
l
l
l
l
l
l
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
75V
4.6mΩ
5.8mΩ
128A
120A
c
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
D
D
S
G
G
D2Pak
AUIRFS3307Z
D
S
TO-262
AUIRFSL3307Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A)
is 25°C, unless otherwise specified.
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
VGS
dv/dt
EAS (Thermally limited)
IAR
EAR
TJ
TSTG
f
d
Avalanche Current
Repetitive Avalanche Energy
A
120
512
230
d
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy
Units
c
c
90
128
W
1.5
± 20
6.7
e
W/°C
V
V/ns
mJ
140
See Fig. 14, 15, 22a, 22b
g
A
mJ
-55 to + 175
Operating Junction and
Storage Temperature Range
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
R θJC
R θJA
Junction-to-Case
k
Junction-to-Ambient (PCB Mount) , D2Pak
j
Typ.
Max.
Units
–––
–––
0.65
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/17/11
AUIRFS/SL3307Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
R DS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
R G(int)
75
–––
–––
2.0
320
–––
–––
–––
–––
–––
––– –––
0.094 –––
4.6
5.8
–––
4.0
––– –––
–––
20
––– 250
––– 100
––– -100
0.70 –––
V
V/°C
mΩ
V
S
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 75A
VDS = VGS, ID = 150μA
VDS = 50V, ID = 75A
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
d
g
Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
C iss
C oss
C rss
C oss eff. (ER)
C oss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
79
19
24
55
15
64
38
65
4750
420
190
440
410
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
pF
Conditions
ID = 75A
VDS = 38V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 49V
ID = 75A
R G = 2.6Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
g
g
i
h
Diode Characteristics
Parameter
IS
VSD
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
di
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.050mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
2
Min. Typ. Max. Units
–––
–––
128c
–––
–––
512
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
VR = 64V,
TJ = 125°C
IF = 75A
di/dt = 100A/μs
TJ = 25°C
D
S
g
––– –––
1.3
V
–––
33
50
ns
–––
39
59
–––
42
63
nC
–––
56
84
TJ = 125°C
–––
2.2
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
ISD ≤ 75A, di/dt ≤ 1570A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994.
Rθ is measured at TJ approximately 90°C.
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AUIRFS/SL3307Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive
qualification.
IR’s
Industrial
and Consumer
qualification level is granted by extension of the
higher Automotive level.
3L-D2 PAK
MSL1
3L-TO-262
N/A
Class M4(+/- 800V )†††
(per AEC-Q101-002)
Class H1C(+/- 2000V )†††
(per AEC-Q101-001)
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
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3
AUIRFS/SL3307Z
1000
1000
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
10
BOTTOM
4.5V
10
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.5
100
TJ = 175°C
T J = 25°C
10
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
ID = 72A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 72A
C oss = C ds + C gd
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
10000
Ciss
Coss
1000
Crss
10.0
VDS= 60V
VDS= 38V
VDS= 15V
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS/SL3307Z
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
1msec
10msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
1
2.0
Limited By Package
ID, Drain Current (A)
125
100
75
50
25
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
150
50
100
Id = 5mA
95
90
85
80
75
70
65
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1.2
EAS , Single Pulse Avalanche Energy (mJ)
600
1.0
0.8
Energy (μJ)
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
25
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
0.6
0.4
0.2
0.0
ID
15A
26A
BOTTOM 75A
TOP
500
400
300
200
100
0
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFS/SL3307Z
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.1164 0.000088
0.3009 0.001312
0.2313
Ci= τi/Ri
Ci i/Ri
0.009191
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R3
R3
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
Duty Cycle =
Single Pulse
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
150
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 75A
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFS/SL3307Z
20
IF = 48A
V R = 64V
4.0
3.0
2.5
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
10
5
0
0.5
-75 -50 -25 0
0
25 50 75 100 125 150 175 200
200
400
600
800
1000
TJ , Temperature ( °C )
diF /dt (A/μs)
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
20
420
IF = 72A
V R = 64V
IF = 48A
V R = 64V
340
TJ = 25°C
TJ = 125°C
QRR (A)
15
IRR (A)
TJ = 25°C
TJ = 125°C
15
3.5
IRR (A)
VGS(th), Gate threshold Voltage (V)
4.5
10
5
TJ = 25°C
TJ = 125°C
260
180
100
0
20
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
420
IF = 72A
V R = 64V
QRR (A)
340
TJ = 25°C
TJ = 125°C
260
180
100
20
0
200
400
600
800
1000
diF /dt (A/μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS/SL3307Z
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
*
VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 21a. Unclamped Inductive Test Circuit
LD
Fig 21b. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
Fig 22a. Switching Time Test Circuit
tr
td(off)
tf
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
8
Fig 23a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 23b. Gate Charge Waveform
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AUIRFS/SL3307Z
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
Part Number
AUFS3307Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFS/SL3307Z
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUFSL3307Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS/SL3307Z
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11
AUIRFS/SL3307Z
Ordering Information
Base part
Package Type
AUIRFSL3307Z
AUIRFS3307Z
TO-262
D2Pak
12
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFSL3307Z
AUIRFS3307Z
AUIRFS3307ZTRL
AUIRFS3307ZTRR
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AUIRFS/SL3307Z
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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13