SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCP53 ISSUE 3 AUGUST 1995 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE BCP56 PARTMARKING DETAILS BCP53 BCP53 10 C E C B BCP53 16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO VALUE -100 UNIT V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V -1.5 A Peak Pulse Current ICM Continuous Collector Current IC -1 A Power Dissipation at Tamb =25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. -100 V IC=-100µ A V(BR)CEO -80 V IC=- 10mA * Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µ A Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO MAX. -100 -20 µA nA VCB=-30V VCB=-30V, Tamb=150°C -10 µA VEB=-5V Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-500mA, VCE=-2V* Static Forward Current hFE Transfer Ratio BCP53-10 BCP53-16 Transition Frequency fT 40 25 63 100 250 100 160 125 IC=-150mA, IC=-500mA, IC=-150mA, IC=-150mA, 160 250 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 15 VCE=-2V* VCE=-2V* VCE=-2V* VCE=-2V* IC=-50mA, VCE=-10V, f=100MHz