Panasonic DMA26109 Silicon pnp epitaxial planar type Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
DMA26109
Silicon PNP epitaxial planar type
For digital circuits
 Features
 Package
 Basic Part Number
 Code
Mini5-G3-B
 Pin Name
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
Dual DRA2113Z (Common emitter)
 Packaging
4: Collector (Tr2)
5: Collector (Tr1)
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Marking Symbol: P1
 Absolute Maximum Ratings Ta = 25°C
 Internal Connection
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–50
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
(C1)
5
(C2)
4
Tr2
Tr1
R2
R2
R1
R1
1
(B1)
2
(E)
Resistance value
3
(B2)
R1
R2
1
10
kΩ
kΩ
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–50
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –50 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –50 V, IB = 0
– 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = –6 V, IC = 0
–1.5
mA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –5 mA
30
hFE
(Small/Large)
VCE = –10 V, IC = –5 mA
0.50
hFE ratio *
Collector-emitter saturation voltage
VCE(sat)
IC = –10 mA, IB = – 0.5 mA
Input voltage (ON)
VI(on)
VCE = – 0.2 V, IC = –5 mA
Input voltage (OFF)
VI(off)
VCE = –5 V, IC = –100 µA

0.99

– 0.25
–1.0
V
V
– 0.4
V
Input resistance
R1
–30%
1
+30%
kΩ
Resistance ratio
R1 / R2
0.08
0.1
0.12

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: January 2010
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1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA26109
DMA26109_PT-Ta
DMA26109_IC-VCE
PT  Ta
IC  VCE
IB = −800 µA
−100
250
200
150
100
−600 µA
−80
−500 µA
−60
−400 µA
−300 µA
−40
−200 µA
−20
50
0
40
80
120
160
0
200
−100 µA
0
−2
−4
−8
−10
VCE = −10 V
250
150
25°C
−30°C
100
50
0
− 0.1
−12
Ta = 85°C
200
−1
IC / IB = 20
−100
DMA26109_VIN-IO
IO  VIN
−10
−10
Collector current IC (mA)
DMA26109_IO-VIN
VCE(sat)  IC
−10
−6
hFE  IC
Collector-emitter voltage VCE (V)
DMA26109_VCEsat-IC
VIN  IO
−100
VO = −5 V
VO = − 0.2 V
Ta = 85°C
25°C
−10−1
Ta = 85°C
− 0.1
− 0.01
− 0.1
−1
Input voltage VIN (V)
−1
Output current IO (mA)
Collector-emitter saturation voltage VCE(sat) (V)
−700 µA
Forward current transfer ratio hFE
300
Collector current IC (mA)
Total power dissipation PT (mW)
Ta = 25°C
Ambient temperature Ta (°C)
−30°C
−30°C
−10−2
−10
−1
25°C
Ta = −30°C
85°C
25°C
−1
−10
Collector current IC (mA)
2
300
−120
350
0
DMA26109_hFE-IC
−100
−10−3
0
− 0.4
− 0.8
Input voltage VIN (V)
ZJJ00542BED
−1.2
− 0.1
− 0.1
−1
−10
Output current IO (mA)
−100
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA26109
Mini5-G3-B
(0.65)
0.30
Unit: mm
+0.10
−0.05
0.13
+0.05
−0.02
1
2
(0.95)
(0.95)
2.8
0.4 ±0.2
+0.2
−0.3
6°
+0.25
−0.05
1.50
4
5
3
1.9 ±0.1
2.90
+0.20
−0.05
+0.3
1.1 −0.1
0 to 0.1
+0.2
1.1 −0.1
8°
ZJJ00542BED
3
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semiconductors described in this book
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20080805
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