BSO604NS2 OptiMOS Power-Transistor Product Summary Feature • Dual N-Channel • Enhancement mode VDS 55 V R DS(on) 35 mΩ ID • Logic Level 5 A P-DSO-8 -7 •150 °C operating temperature • Avalanche rated • dv/dt rated Type BSO604NS2 Package P-DSO-8 -7 Ordering Code Q67060-S7309 Marking 2N604L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C, one channel active 5 TA=70°C, one channel active 4 ID puls 20 EAS 90 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation, one channel active Ptot 2 W -55... +150 °C Pulsed drain current, one channel active TA=25°C Avalanche energy, single pulse mJ ID=5 A , VDD=25V, RGS=25Ω Reverse diode dv/dt kV/µs IS=5A, VDS=44V, di/dt=200A/µs, Tjmax=150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2003-10-28 BSO604NS2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 34 50 @ min. footprint ; t ≤ 10 s - - 100 @ 6 cm2 cooling area 1) ; t ≤10 s - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, I D=1mA Gate threshold voltage, VGS = VDS ID=30µA Zero gate voltage drain current µA IDSS V DS=55V, V GS=0V, Tj=25°C - 0.01 1 V DS=55V, V GS=0V, Tj=150°C - 1 100 IGSS - 1 100 nA RDS(on) - 38 44 mΩ RDS(on) - 31 35 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=2.5A Drain-source on-state resistance V GS=10V, ID=2.5A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-10-28 BSO604NS2 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 6.7 13.4 - S pF Dynamic Characteristics Transconductance gfs V DS≥ 2 * ID * RDS(on)max=0.4V, ID =5A Input capacitance Ciss V GS=0V, VDS=25V, - 656 870 Output capacitance Coss f=1MHz - 154 205 Reverse transfer capacitance Crss - 49 75 Turn-on delay time td(on) V DD=27.5V, VGS=4.5V, - 9 14 Rise time tr ID=5A, - 8 13 Turn-off delay time td(off) RG=75Ω - 52 78 Fall time tf - 8 12 - 2 3 - 6.6 10 - 19.7 26 V(plateau) VDD =44V, ID=5A - 2.9 - V IS - - 5 A - - 20 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =44V, ID=5A VDD =44V, ID=5A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF=5A - 0.9 1.3 V Reverse recovery time trr VR =27.5V, IF =lS , - 32 40 ns Reverse recovery charge Qrr diF/dt=100A/µs - 34 43 nC Page 3 2003-10-28 BSO604NS2 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: V GS≥ 6 V parameter: V GS≥ 10 V 2.2 BSO604NS2 R W 1.8 4.5 1.6 4 1.4 3.5 1.2 3 1 2.5 0.8 2 0.6 1.5 0.4 1 0.2 0.5 0 0 20 BSO604NS2 A thJC thJA ID Ptot 5.5 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA °C 3 Safe operating area 4 Max. transient thermal impedance ID = f ( V DS ) ZthJC = f (t p) parameter : D = 0 , TA = 25 °C parameter : D = t p/T 10 2 BSO604NS2 10 2 RD VD S tp = 46.0µs 10 1 100 µs ID ZthJC 10 1 S( ) on = BSO604NS2 K/W /I D A 160 TA 10 0 1 ms 10 0 10 -1 10 ms D = 0.50 0.20 10 0.10 -2 0.05 10 -1 0.02 10 -3 DC 10 -2 -1 10 10 0 10 1 V 10 2 VDS 10 -4 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Page 4 2003-10-28 0 BSO604NS2 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS A h 120 Ptot = 2W gf e d 10 9 c ID 8 7 6 c b 3.2 c 3.4 d 3.6 e 3.8 f 4.0 g 4.5 h 10.0 100 d 90 80 e 70 60 b 5 f 50 4 g 40 3 20 1 10 0.5 1 1.5 2 2.5 3 3.5 h 30 a 2 0 0 BSO604NS2 mΩ VGS [V] a 3.0 RDS(on) 12 BSO604NS2 4 V 0 0 5 VGS [V] = c 3.4 1 d 3.6 e f 3.8 4.0 2 3 g h 4.5 10.0 4 5 6 7 8 VDS A 10 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 20 24 A S 20 16 18 gfs ID 14 12 16 14 10 12 8 10 8 6 6 4 4 2 0 0 2 0.5 1 1.5 2 2.5 3 4 V VGS Page 5 0 0 2 4 6 8 10 12 14 16 A ID 20 2003-10-28 BSO604NS2 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 2.5 A, VGS = 10 V parameter: V GS = VDS 110 BSO604NS2 2.5 mΩ V VGS(th) RDS(on) 90 80 70 150 µA 1.5 60 30 µA 50 1 98% 40 typ 30 0.5 20 10 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 pF BSO604NS2 A Ciss 10 1 C IF 10 3 Coss 10 2 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 30 V VDS 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-10-28 BSO604NS2 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj) VGS = f (QGate) par.: ID = 5 A , VDD = 25 V, RGS = 25 Ω parameter: ID = 5 A pulsed 90 16 mJ V 70 12 60 VGS EAS BSO604NS2 10 0,2 VDS max 50 8 0,8 VDS max 40 6 30 4 20 2 10 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 4 8 12 16 20 24 nC 30 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 BSO604NS2 V(BR)DSS V 62 60 58 56 54 52 50 -60 -20 20 60 100 °C 180 Tj Page 7 2003-10-28 BSO604NS2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BBSO604NS2, for simplicity the device is referred to by the term BSO604NS2 throughout this documentation. Page 8 2003-10-28