NJSEMI MPS6521 Amplifier transistor Datasheet

, Una..
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MPS6521 (NPN)
MPS6523 (PNP)
Amplifier Transistors
Features
• Voltage and Current are Negative for PNP Transistors
COLLECTOR
3
COLLECTOR
MAXIMUM RATINGS
3
Rating
Symbol NPN PNP
Collector- Emitter Voltage
MPS6521
MPS6523
Collector- Base Voltage
MPS6521
MPS6523
Emitter- Base Voltage
VCEO
Unit
Vdc
25
25
VCBO
Vdc
40
VEBO
4.0
Vdc
Collector Current - Continuous
lc
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ Tc = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Max
Unit
RBJA
200
°C/W
Operating and Storage Junction
Temperature Range
EMITTER
EMITTER
25
MARKING
DIAGRAM
TO-92
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient
(Printed Circuit Board Mounting)
83.3
°c/w
ROJC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Thermal Resistance, Junction-to-Case
MPS652x = Device Code
x = 1 or 3
A
= Assembly Location
Y
= Year
= Work Week
WW
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Onnllfv
MPS6521 (NPN)
MPS6523 (PNP)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
25
-
Vdc
4.0
—
Vdc
_
0.05
0.05
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage
(lc = 0.5 mAdc, IB = 0)
Emitter -Base Breakdown Voltage
(I E = 10fiAdc, lc = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0)
IjAdc
ICBO
MPS6521
MPS6523
ON CHARACTERISTICS
-
DC Current Gain
(l c = 100nAdc, VCE = 10 Vdc)
MPS6521
150
-
(lc = 2.0 mAdc, VCE = 10 Vdc)
MPS6521
300
600
(l c = 100|jAdc, VCE = 10 Vdc)
MPS6523
150
-
(lc = 2.0 mAdc, VCE = 1 0 Vdc)
MPS6523
300
600
VCE(sat)
—
0.5
Vdc
C0tx>
-
3.5
pF
3.0
dB
HFE
Collector -Emitter Saturation Voltage
(lc = 50 mAdc, IB = 5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, lE = 0. f = 1.0 MHz)
Noise Figure
(lc = 10 nAdc, VCE = 5.0 Vdc, Rs = 10 k Q,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
NF
NPN
MPS6521
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 Vc
+3.0 Vc
300ns
+10.9V
DUTY CYCLE = 2%
-0.5 V
<1.0ns
275
10 <t, <500nS-H
DUTY CYCLE = 2%
_;_C s <4.0pF*
JC s <4.0pF*
*Total shunt capacitance of test jig and connectors
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
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