PHILIPS BYD77F Ultra fast low-loss controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1999 Nov 15
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD87
package through Implotec(1)
technology. This package is
• High maximum operating
temperature
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
handbook, 4 columns
a
• Shipped in 8 mm embossed tape
• Smallest surface mount
rectifier outline.
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
PARAMETER
CONDITIONS
IF(AV)
UNIT
−
50
V
BYD77B
−
100
V
BYD77C
−
150
V
BYD77D
−
200
V
BYD77E
−
250
V
BYD77F
−
300
V
BYD77G
−
400
V
BYD77A
−
50
V
BYD77B
−
100
V
continuous reverse voltage
BYD77C
−
150
V
BYD77D
−
200
V
BYD77E
−
250
V
BYD77F
−
300
V
BYD77G
−
400
V
−
2.00
A
−
1.85
A
−
0.85
A
−
0.80
A
average forward current
BYD77A to D
BYD77E to G
IF(AV)
MAX.
repetitive peak reverse voltage
BYD77A
VR
MIN.
average forward current
BYD77A to D
BYD77E to G
1999 Nov 15
Ttp = 105 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
Tamb = 60 °C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
IFRM
IFRM
BYD77 series
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 105 °C; see Figs 6 and 7
BYD77A to D
−
15
A
BYD77E to G
−
13
A
repetitive peak forward current
Tamb = 60 °C; see Figs 8 and 9
BYD77A to D
−
8.5
A
BYD77E to G
−
8.0
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
−
25
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = 25 °C prior to
surge; inductive load switched off
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
MIN.
TYP.
MAX.
−
−
0.75
V
−
−
0.83
V
−
−
0.98
V
−
−
1.05
V
−
−
V
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
BYD77A to D
CONDITIONS
IF = 1 A; Tj = Tj max;
see Figs 12 and 13
BYD77E to G
VF
forward voltage
BYD77A to D
IF = 1 A;
see Figs 12 and 13
BYD77E to G
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD77A
IR
trr
55
BYD77B
110
−
−
V
BYD77C
165
−
−
V
BYD77D
220
−
−
V
BYD77E
275
−
−
V
BYD77F
330
−
−
V
BYD77G
440
−
−
V
VR = VRRMmax;
see Fig.14
−
−
1
µA
VR = VRRMmax;
Tj = 165 °C; see Fig.14
−
−
100
µA
−
−
25
ns
−
−
50
ns
reverse current
reverse recovery time
BYD77A to D
BYD77E to G
1999 Nov 15
UNIT
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.18
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
Cd
BYD77 series
PARAMETER
diode capacitance
CONDITIONS
f = 1 MHz; VR = 0 V;
see Fig.15
BYD77A to D
BYD77E to G
dI R
-------dt
maximum slope of reverse recovery
current
BYD77A to D
BYD77E to G
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
see Fig.17
MIN.
TYP.
MAX.
UNIT
−
50
−
pF
−
40
−
pF
−
−
4
A/µs
−
−
5
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
UNIT
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 15
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
GRAPHICAL DATA
MCD596
MCD598
3
handbook, halfpage
4
handbook, halfpage
IF(AV)
I F(AV)
(A)
(A)
3
2
2
1
1
0
0
0
100
0
200
o
Ttp ( C)
100
BYD77A to D
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
BYD77E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MCD597
Ttp ( o C)
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MCD595
1.0
1.2
handbook,
halfpage
200
handbook, halfpage
I F(AV)
(A)
I F(AV)
(A)
0.8
0.5
0.4
0
0
0
100
Tamb ( o C)
0
200
100
BYD77A to D
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
BYD77E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1999 Nov 15
5
Tamb ( o C)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MCD593
20
handbook, full pagewidth
δ=
0.05
I FRM
(A)
0.1
10
0.2
0.5
1
0
10 -2
10 -1
10 0
10 1
10 2
10 3
t p (ms )
10 4
BYD77A to D
Ttp = 105 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD591
handbook,20
full pagewidth
δ=
0.05
I FRM
(A)
0.1
10
0.2
0.5
1
0
-2
10
10
-1
10 0
10 1
10
2
10
3
t p (ms )
10
4
BYD77E to G
Ttp = 105°C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MCD592
10
handbook, full pagewidth
I FRM
(A)
δ=
0.05
0.1
5
0.2
0.5
1
0
-2
10
10 -1
10 0
10 1
10 2
10 3
10 4
t p (ms )
BYD77A to D
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD590
handbook,10
full pagewidth
I FRM
(A)
δ=
0.05
0.1
5
0.2
0.5
1
0
-2
10
10 -1
10 0
10 1
10 2
10 3
t p (ms )
10 4
BYD77E to G
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MGC530
MGC529
2
handbook, halfpage
2
handbook, halfpage
a=3 2.5 2 1.57 1.42
P
(W)
a=3
2.5 2 1.57 1.42
P
(W)
1
1
0
0
0
1
IF(AV) (A)
2
1
0
BYD77A to D
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
2
IF(AV) (A)
BYD77E to G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MCD594
MGC531
10
10
handbook, halfpage
handbook, halfpage
IF
(A)
IF
(A)
8
8
6
6
4
4
2
2
0
0
0
1
VF (V)
2
0
1
2
VF (V)
3
BYD77A to D
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
BYD77E to G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1999 Nov 15
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
MGA853
3
10halfpage
handbook,
MCD608
2
10
handbook, halfpage
IR
(µA)
Cd
(pF)
102
10
A, B, C, D
10
E, F, G
1
100
0
1
200
T j ( o C)
1
10 2
10
10 3
V R (V)
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.14 Reverse current as a function of junction
temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
50
IF halfpage
ndbook,
dI F
dt
t rr
4.5
10% t
50
dI R
dt
2.5
100%
IR
1.25
MGC499
MSB213
Dimensions in mm.
Fig.16 Printed-circuit board for surface mounting.
1999 Nov 15
Fig.17 Reverse recovery definitions.
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, full pagewidth
BYD77 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1999 Nov 15
10
MAM057
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D1
L
L
H
DIMENSIONS (mm are the original dimensions)
UNIT
D
D1
H
L
mm
2.1
2.0
2.0
1.8
3.7
3.3
0.3
D
0
1
2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
SOD87
100H03
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-03-31
99-06-04
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Nov 15
11
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SCA 68
© Philips Electronics N.V. 1999
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Printed in The Netherlands
135002/03/pp12
Date of release: 1999
Nov 15
Document order number:
9397 750 06272