LINER LT5558 600mhz to 1100mhz high linearity direct quadrature modulator Datasheet

LT5558
600MHz to 1100MHz
High Linearity Direct
Quadrature Modulator
DESCRIPTION
FEATURES
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Direct Conversion from Baseband to RF
High OIP3: + 22.4dBm at 900MHz
Low Output Noise Floor at 20MHz Offset:
No RF: –158dBm/Hz
POUT = 4dBm: –152.7dBm/Hz
Low Carrier Leakage: –43.7dBm at 900MHz
High Image Rejection: –49dBc at 900MHz
3 Channel CDMA2000 ACPR: –70.4dBc at 900MHz
Integrated LO Buffer and LO Quadrature Phase
Generator
50Ω AC-Coupled Single-ended LO and RF Ports
High Impedance Interface to Baseband Inputs
with 2.1V Common Mode Voltage
16-Lead QFN 4mm × 4mm Package
The LT®5558 is a direct I/Q modulator designed for high
performance wireless applications, including wireless
infrastructure. It allows direct modulation of an RF signal
using differential baseband I and Q signals. It supports
GSM, EDGE, CDMA, CDMA2000, and other systems. It
may also be configured as an image reject upconverting
mixer, by applying 90° phase-shifted signals to the I and
Q inputs. The high impedance I/Q baseband inputs consist
of voltage-to-current converters that in turn drive doublebalanced mixers. The outputs of these mixers are summed
and applied to an on-chip RF transformer, which converts
the differential mixer signals to a 50Ω single-ended output.
The balanced I and Q baseband input ports are intended
for DC coupling from a source with a common-mode
voltage level of about 2.1V. The LO path consists of an LO
buffer with single-ended input, and precision quadrature
generators which produce the LO drive for the mixers.
The supply voltage range is 4.5V to 5.25V.
APPLICATIONS
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RFID Single-Sideband Transmitters
Infrastructure TX for Cellular and ISM Bands
Image Reject Up-Converters for Cellular Bands
Low-Noise Variable Phase-Shifter for 600MHz to
1100MHz Local Oscillator Signals
Microwave Links
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
TYPICAL APPLICATION
600MHz to 1100MHz Direct Conversion Transmitter Application
5V
2 x 100nF
VCC
8, 13
LT5558
RF = 600MHz TO
1100MHz
I-CH
11
O°
1
EN
90°
∫
7
QDAC
5
BALUN
Q-CH
PA
–50
ACPR, ALTCPR (dBc)
16
V-1
–110
DOWNLINK TEST
MODEL 64 DPCH
–120
3-CH ACPR
3-CH ALTCPR
–130
–60
1-CH ACPR
–140
–70
1-CH NOISE
V-1
–80
1-CH ALTCPR
–150
3-CH NOISE
BASEBAND
GENERATOR
–90
–30
2, 4, 6, 9, 10,
12, 15, 17
3
5558 TA01
–20
–15
–10
–5
0
–25
RF OUTPUT POWER PER CARRIER (dBm)
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
∫
–40
14
IDAC
CDMA2000 ACPR, AltCPR and Noise vs
RF Output Power at 900MHz for 1 and 3 Carriers
–160
5558 TA01b
VCO/SYNTHESIZER
5558fa
1
LT5558
ABSOLUTE MAXIMUM RATINGS
PACKAGE/ORDER INFORMATION
(Note 1)
ORDER PART NUMBER
LT5558EUF
VCC
BBPI
BBMI
GND
TOP VIEW
Supply Voltage ........................................................5.5V
Common-Mode Level of BBPI, BBMI and
BBPQ, BBMQ .......................................................2.5V
Voltage on any Pin
Not to Exceed....................–500mV to (VCC + 500mV)
Operating Ambient Temperature
(Note 2) ............................................... –40°C to 85°C
Storage Temperature Range................... –65°C to 125°C
16 15 14 13
EN 1
12 GND
GND 2
11 RF
LO 3
10 GND
GND 4
6
7
8
BBMQ
GND
BBPQ
VCC
9
5
GND
UF PART MARKING
5558
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE
SOLDERED TO PCB
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted
(upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
fRF
RF Frequency Range
–3 dB Bandwidth
–1 dB Bandwidth
S22, ON
RF Output Return Loss
EN = High (Note 6)
–15.8
dB
S22, OFF
RF Output Return Loss
EN = Low (Note 6)
–13.3
dB
NFloor
RF Output Noise Floor
No Input Signal (Note 8)
PRF = 4dBm (Note 9)
PRF = 4dBm (Note 10)
–158
–152.7
–152.3
dBm/Hz
dBm/Hz
dBm/Hz
GP
Conversion Power Gain
POUT/PIN,I&Q
9.7
GV
Conversion Voltage Gain
20 • Log (VOUT, 50Ω/VIN, DIFF, I or Q)
–5.1
dB
POUT
Absolute Output Power
1VP-P DIFF CW Signal, I and Q
–1.1
dBm
G3LO vs LO
3 • LO Conversion Gain Difference
(Note 17)
–26.5
dB
OP1dB
Output 1dB Compression
(Note 7)
7.8
dBm
OIP2
Output 2nd Order Intercept
(Notes 13, 14)
65
dBm
OIP3
Output 3rd Order Intercept
(Notes 13, 15)
22.4
dBm
IR
Image Rejection
(Note 16)
–49
dBc
LOFT
Carrier Leakage
EN = High, PLO = 0dBm (Note 16)
–43.7
dBm
(LO Feedthrough)
EN = Low, PLO = 0dBm (Note 16)
–60
dBm
EVM
GSM Error Vector Magnitude
PRF = 2dBm
0.6
%
RF Output (RF)
600 to 1100
680 to 960
MHz
MHz
dB
LO Input (LO)
fLO
LO Frequency Range
PLO
LO Input Power
600 to 1100
–10
0
MHz
5
dBm
5558fa
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LT5558
ELECTRICAL CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted
(upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
SYMBOL
PARAMETER
CONDITIONS
S11, ON
LO Input Return Loss
EN = High (Note 6)
MIN
–10.6
TYP
MAX
UNITS
dB
S11, OFF
LO Input Return Loss
EN = Low (Note 6)
–2.5
dB
NFLO
LO Input Referred Noise Figure
(Note 5) at 900MHz
14.6
dB
GLO
LO to RF Small-Signal Gain
(Note 5) at 900MHz
16.4
dB
IIP3LO
LO Input 3rd Order Intercept
(Note 5) at 900MHz
–3.3
dBm
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BWBB
Baseband Bandwidth
–3dB Bandwidth
400
MHz
VCMBB
DC Common-mode Voltage
(Note 4)
2.1
V
RIN, DIFF
Differential Input Resistance
Between BBPI and BBMI (or BBPQ and BBMQ)
RIN, CM
Common Mode Input Resistance
(Note 20)
3
kΩ
100
Ω
ICM, COMP
Common Mode Compliance Current range
(Notes 18, 20)
–820 to 440
μA
PLO-BB
Carrier Feedthrough on BB
POUT = 0 (Note 4)
–46
dBm
IP1dB
Input 1dB compression point
Differential Peak-to-Peak (Notes 7, 19)
3.4
VP-P,DIFF
ΔGI/Q
I/Q Absolute Gain Imbalance
0.05
dB
ΔϕI/Q
I/Q Absolute Phase Imbalance
0.2
Deg
Power Supply (VCC)
VCC
Supply Voltage
4.5
ICC(ON)
Supply Current
EN = High
5
5.25
V
108
135
mA
50
μA
ICC(OFF)
Supply Current, Sleep mode
EN = 0V
0.1
tON
Turn-On Time
EN = Low to High (Note 11)
0.3
μs
tOFF
Turn-Off Time
EN = High to Low (Note 12)
1.1
μs
230
V
μA
Enable (EN), Low = Off, High = On
Enable
Shutdown
Input High Voltage
Input High Current
EN = High
EN = 5V
Input Low Voltage
EN = Low
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: Tests are performed as shown in the configuration of Figure 7.
Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: VBBPI - VBBMI = 1VDC, VBBPQ - VBBMQ = 1VDC.
Note 6: Maximum value within –1dB bandwidth.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of final value.
Note 12: RF power is at least 30dB lower than in the ON state.
1
0.5
V
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +
2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feedthrough nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO - BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
Note 18: Common mode current range where the common mode (CM)
feedback loop biases the part properly. The common mode current is the
sum of the current flowing into the BBPI (or BBPQ) pin and the current
flowing into the BBMI (or BBMQ) pin.
Note 19: The input voltage corresponding to the output P1dB.
Note 20: BBPI and BBMI shorted together (or BBPQ and BBMQ shorted
together).
5558fa
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LT5558
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
RF Output Power vs LO Frequency
at 1VP-P Differential
Voltage Gain vs LO Frequency
Supply Current vs Supply Voltage
Baseband Drive
120
85°C
110
25°C
100
–40°C
2
–2
0
–4
–2
–6
–4
–6
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–8
–10
90
4.5
–12
550
5.25
4.75
5
SUPPLY VOLTAGE (V)
VOLTAGE GAIN (dB)
RF OUTPUT POWER (dBm)
650 750
950 1050 1150 1250
LO FREQUENCY (MHz)
26
8
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
650 750
OP1dB (dBm)
OIP2 (dBm)
OIP3 (dBm)
10
65
12
550
60
55
45
550
850
950 1050 1150 1250
LO FREQUENCY (MHz)
650 750
950 1050 1150 1250
LO FREQUENCY (MHz)
2 • LO LEAKAGE (dBm)
LO FEEDTHROUGH (dBm)
–48
550
850
950 1050 1150 1250
5558 G06
3 • LO Leakage to RF Output vs
3 • LO Frequency
–40
–46
650 750
LO FREQUENCY (MHz)
2 • LO Leakage to RF Output vs
2 • LO Frequency
–40
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–2
550
850
5558 G05
LO Feedthrough to RF Output vs
LO Frequency
–44
4
0
5558 G04
–42
6
2
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
50
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
950 1050 1150 1250
Output 1dB Compression vs LO
Frequency
fIM2 = fBB, 1 + fBB, 2 + fLO
fBB, 1 = 2MHz
70 fBB, 2 = 2.1MHz
22
14
850
5558 G03
75
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
18
650 750
LO FREQUENCY (MHz)
Output IP2 vs LO Frequency
20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–12
5558 G02
Output IP3 vs LO Frequency
16
–10
–16
550
850
5558 G01
24
–8
–14
–45
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–45
–50
–55
–50
3 • LO LEAKAGE (dBm)
SUPPLY CURRENT (mA)
130
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–55
–60
–65
650 750
850
950 1050 1150 1250
LO FREQUENCY (MHz)
5558 G07
–60
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2 • LO FREQUENCY (GHz)
2.5
5558 G08
–70
1.65 1.95 2.25 2.55 2.85 3.15 3.5 3.75
3 • LO FREQUENCY (GHz)
5558 G09
5558fa
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LT5558
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
Noise Floor vs RF Frequency
–157
–30
fLO = 900MHz (FIXED)
NO BASEBAND SIGNAL
0
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–35
–159
–160
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–162
550
650 750
850
–40
–45
–55
550
950 1050 1150 1250
LO PORT, EN = HIGH,
PLO = –10dBm
650 750
850
–40
550
950 1050 1150 1250
850
950 1050 1150 1250
5558 G25
Voltage Gain vs LO Power
950 1050 1150 1250
–2
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
3
2
–4
–6
VOLTAGE GAIN (dB)
ABSOLUTE I/Q PHASE IMBALANCE (DEG)
4
0.1
650 750
5558 G10
Absolute I/Q Phase Imbalance vs
LO Frequency
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
RF PORT, EN = HIGH, NO LO
FREQUENCY (MHz)
LO FREQUENCY (MHz)
0.2
850
RF PORT, EN = LOW
–30
Absolute I/Q Gain Imbalance vs
LO Frequency
650 750
–20
–50
5558 G24
0
550
LO PORT, EN = HIGH, PLO = 0dBm
–10
RF PORT, EN = HIGH,
PLO = 0dBm
RF FREQUENCY (MHz)
ABSOLUTE I/Q GAIN IMBALANCE (dB)
LO PORT, EN = LOW
S11 (dB)
IMAGE REJECTION (dBc)
NOISE FLOOR (dBm/Hz)
–158
–161
LO and RF Port Return Loss
vs RF Frequency
Image Rejection vs LO Frequency
–8
–10
–12
–14
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
1
–16
0
550
–20
–20
–18
LO FREQUENCY (MHz)
650 750
850
950 1050 1150 1250
LO FREQUENCY (MHz)
–16 –12
–8
–4
0
4
5558 G11
5558 G12
Output IP3 vs LO Power
5558 G13
LO Feedthrough vs LO Power
24
8
LO INPUT POWER (dBm)
Image Rejection vs LO Power
–40
–35
18
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
16
14
–42
–44
–46
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–48
12
10
–20
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
–16 –12
–8
–4
0
4
8
LO INPUT POWER (dBm)
–50
–20
–16 –12
–8
–4
0
4
8
LO INPUT POWER (dBm)
5558 G14
IMAGE REJECTION (dBc)
OIP3 (dBm)
20
LO FEEDTHROUGH (dBm)
22
–40
–45
–50
–55
–20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–16 –12
–8
–4
0
4
8
LO INPUT POWER (dBm)
5558 G15
5558 G16
5558fa
5
LT5558
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Temperature
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Supply Voltage
–10
10
–20
0
–20
0
HD3
–30
–50
HD2
–40
–60
–40°C
25°C
85°C
–70
–80
0
1
2
HD3
HD2
–60
–80
5558 G17
0
1
2
3
4
5
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
5558 G20
4
5
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
–45
0
5558 G18
1
2
3
4
5
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
5558 G19
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Supply Voltage
10
10
0
–10
0
RF
–20
fBBI = 2MHz, 2.1MHz, 0°
–30 fBBQ = 2MHz, 2.1MHz, 90°
–40
–50
–60
–70
–60
–40
–50
3
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Temperature
PTONE (dBm) IM2, IM3, (dBc)
–55
2
–35
–50
–60
1
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB
HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB
–40
–50
4.5V
5V
5.5V
0
Image Rejection vs CW Baseband
Voltage
–45
–40
–60
HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB
HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–30
–50
–70
4
5
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
–20
–40
–50
3
–10
IM3
IM2
–40°C
25°C
85°C
–80
1
10
0.1
I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE)
5558 G21
IM2 = POWER AT fLO + 4.1MHz
IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz
PTONE (dBm) IM2, IM3, (dBc)
HD2, HD3 (dBc)
–20
–40
RF
–30
HD2, HD3 (dBc)
–10
RF CW OUTPUT POWER (dBm)
RF
–30
LO FEEDTHROUGH (dBm)
10
RF CW OUTPUT POWER (dBm)
–10
–30
IMAGE REJECTIOIN (dBc)
LO Feedthrough to RF Output vs
CW Baseband Voltage
RF
–10
–20 fBBI = 2MHz, 2.1MHz, 0°
fBBQ = 2MHz, 2.1MHz, 90°
–30
–40
–50
–60
–70
IM3
IM2
4.5V
5V
5.5V
–80
1
10
0.1
I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE)
5558 G22
IM2 = POWER AT fLO + 4.1MHz
IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz
5558fa
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LT5558
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
Gain Distribution
30
25
VBB = 400mVP-P
–40°C
25°C
85°C
LO Leakage Distribution
Noise Floor Distribution
20
40
–40°C
25°C
85°C
30
15
10
PERCENTAGE (%)
PERCENTAGE (%)
PERCENTAGE (%)
15
20
VBB = 400mVP-P
–40°C
25°C
85°C
10
5
20
10
5
0
8 –7.5 –7 –6.5 –6 –5.5 –5 –4.5 –4 –3.5
GAIN (dB)
0
0
–158
–157.5
–157
NOISE FLOOR (dBm/Hz)
–40°C
25°C
85°C
10
5
5
–40
LO FEEDTHROUGH (dBm), IR (dBc)
PERCENTAGE (%)
15
–46 –44 –42 –40
LO LEAKAGE (dBm)
–38
–36
5558 G28
LO Feedthrough and Image
Rejection vs Temperature After
Calibration at 25°C
Image Rejection Distribution
VBB = 400mVP-P
–48
5558 G27
5558 G26
20
–50
–50
CALIBRATED WITH PRF = –10dBm
fBBI = 2MHz, 0°
fBBQ = 2MHz, 90° + ϕCAL
LO FEEDTHROUGH
–60
–70
–80
IMAGE REJECTION
0
<–66 –62
–58 –54 –50 –46
IMAGE REJECTION (dBc)
–42
5558 G29
–90
–40
–20
0
20
40
TEMPERATURE (°C)
60
80
5558 G30
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the Enable pin voltage is
higher than 1V, the IC is turned on. When the Enable voltage is less than 0.5V or if the pin is disconnected, the IC
is turned off. The voltage on the Enable pin should never
exceed VCC by more than 0.5V, in order to avoid possible
damage to the chip.
GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9,
15 and the Exposed Pad, Pin 17, are connected to each
other internally. Pins 2 and 4 are connected to each other
internally and function as the ground return for the LO
signal. Pins 10 and 12 are connected to each other internally and function as the ground return for the on-chip RF
balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12,
15 and the Exposed Pad, Pin 17, should be connected to
the printed circuit board ground plane.
5558fa
7
LT5558
PIN FUNCTIONS
0.1μF capacitors for decoupling to ground on each of
these pins.
LO (Pin 3): LO Input. The LO input is an AC-coupled singleended input with approximately 50Ω input impedance at
RF frequencies. Externally applied DC voltage should be
within the range –0.5V to (VCC + 0.5V) in order to avoid
turning on ESD protection diodes.
RF (Pin 11): RF Output. The RF output is an AC-coupled
single-ended output with approximately 50Ω output impedance at RF frequencies. Externally applied DC voltage
should be within the range –0.5V to (VCC + 0.5V) in order
to avoid turning on ESD protection diodes.
BBPQ, BBMQ (Pins 7, 5): Baseband Inputs for the
Q-channel. The differential input impedance is 3kΩ. These
pins are internally biased at about 2.1V. Applied common
mode voltage must stay below 2.5V.
BBPI, BBMI (Pins 14, 16): Baseband Inputs for the
I-channel. The differential input impedance is 3kΩ. These
pins are internally biased at about 2.1V. Applied common
mode voltage must stay below 2.5V.
VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected to each other internally. It is recommended to use
BLOCK DIAGRAM
VCC
8
13
LT5558
BBPI 14
V-I
BBMI 16
0°
11 RF
90°
BALUN
BBPQ
7
BBMQ
5
1
V-I
2
4
6
9
GND
3
LO
10
12
15
GND
EN
17
5558 BD
APPLICATIONS INFORMATION
The LT5558 consists of I and Q input differential voltageto-current converters, I and Q up-conversion mixers, an
RF output signal combiner/balun, an LO quadrature phase
generator and LO buffers.
External I and Q baseband signals are applied to the differential baseband input pins, BBPI, BBMI, and BBPQ,
BBMQ. These voltage signals are converted to currents and
translated to RF frequency by means of double-balanced
up-converting mixers. The mixer outputs are combined
in an RF output balun, which also transforms the output
impedance to 50Ω. The center frequency of the resulting
RF signal is equal to the LO signal frequency. The LO input drives a phase shifter which splits the LO signal into
in-phase and quadrature LO signals. These LO signals
are then applied to on-chip buffers which drive the upconversion mixers. Both the LO input and RF output are
single-ended, 50Ω-matched and AC coupled.
Baseband Interface
The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) present a differential input impedance of about 3kΩ. At each
of the four baseband inputs, a low-pass filter using 200Ω
and 1.8pF to ground is incorporated (see Figure 1), which
limits the baseband –1dB bandwidth to approximately
250MHz. The common-mode voltage is about 2.1V and
is slightly temperature dependent. At TA = -40°C, the
common-mode voltage is about 2.28V and at TA = 85°C
it is about 2.01V.
5558fa
8
LT5558
APPLICATIONS INFORMATION
C
RF
VCC = 5V
VCC
LT5558
4.5V TO 5.25V
C5
C1
14
FROM Q
LOPI
BB
SOURCE
VCC RF EN
BBPI
BBPQ
C3
7
2.1VDC
LT5558
C2
2, 4, 6, 9, 10,
12, 15, 17
200
VREF = 0.5V
1.3k
2.1VDC
1
C4
BB
SOURCE
16
5
BBMI BBMQ
2.1VDC
2.1VDC
LO
GND
LOMI
BBPI
RF OUT
8, 13 11
BALUN
3
5558 F03
1.8P
Figure 3. AC-Coupled Baseband Interface
CM
1.3k
1.8P
200
BBMI
GND
5558 F01
Figure 1. Simplifed Circuit Schematic of the LT5558
(Only I-Half is Drawn)
If the I/Q signals are DC-coupled to the LT5558, it is
important that the applied common-mode voltage level
of the I and Q inputs is about 2.1V in order to properly
bias the LT5558. Some I/Q generators allow setting the
common-mode voltage independently. In this case, the
common-mode voltage of those generators must be set to
1.05V to match the LT5558 internal bias where the internal
DC voltage of the signal generators is set to 2.1V due to
the source-load voltage division (See Figure 2).
The LT5558 baseband inputs should be driven differentially, otherwise, the even-order distortion products will
degrade the overall linearity severely. Typically, a DAC
will be the signal source for the LT5558. A pulse-shaping
filter should be placed between the DAC outputs and the
LT5558’s baseband inputs.
An AC-coupled baseband interface with the LT5558 is
drawn in Figure 3. Capacitors C1 to C4 will introduce a
GENERATOR
50Ω 1.05VCC
GENERATOR
50Ω
2.1VDC
low-frequency high-pass corner together with the LT5558’s
differential input impedance of 3kΩ. Usually, capacitors
C1 to C4 will be chosen equal and in such a way that the
–3dB corner frequency f–3dB = 1/(π • RIN,DIFF • C1) is much
lower than the lowest baseband frequency.
DC coupling between the DAC outputs and the LT5558
baseband inputs is recommended, because AC coupling
will introduce a low-frequency time constant that may affect
the signal integrity. Active level shifters may be required to
adapt the common mode level of the DAC outputs to the
common mode input voltage of the LT5558. Such circuits
may, however, suffer degraded LO leakage performance
as small DC offsets and variations over temperature
accumulate. A better scheme is shown in Figure 16, where
feedback is used to track out these variations.
LO Section
The internal LO input amplifier performs single-ended to
differential conversion of the LO input signal. Figure 4
shows the equivalent circuit schematic of the LO input.
The internal, differential LO signal is split into in-phase
and quadrature (90° phase shifted) signals that drive
LO buffer sections. These buffers drive the double balanced I and Q mixers. The phase relationship between
VCC
LT5558
1.5kΩ
20pF
50Ω
+
–
2.1VDC
+
–
2.1VDC
2.1VDC
LO
INPUT
+
–
≈ 50Ω
5558 F02
5558 F04
Figure 2. DC Voltage Levels for a Generator Programmed at
1.05VDC for a 50Ω Load and the LT5558 as a Load
Figure 4. Equivalent Circuit Schematic of the LO Input
5558fa
9
LT5558
APPLICATIONS INFORMATION
the LO input and the internal in-phase LO and quadrature LO signals is fixed, and is independent of start-up
conditions. The phase shifters are designed to deliver
accurate quadrature signals for an LO frequency near
900MHz. For frequencies significantly below 750MHz
or above 1.1GHz, the quadrature accuracy will diminish,
causing the image rejection to degrade. The LO pin input
impedance is about 50Ω and the recommended LO input
power window is –2dBm to + 2dBm. For PLO < –2dBm, the
gain, OIP2, OIP3, dynamic-range (in dBc/Hz) and image
rejection will degrade, especially at TA = 85°C.
Harmonics present on the LO signal can degrade the image
rejection, because they introduce a small excess phase shift
in the internal phase splitter. For the second (at 1.8GHz)
and third harmonics (at 2.7GHz) at –20dBc level, the introduced signal at the image frequency is about –61dBc
or lower, corresponding to an excess phase shift much
less than 1 degree. For the second and third harmonics at
–10dBc, still the introduced signal at the image frequency
is about –51dBc. Higher harmonics than the third will have
less impact. The LO return loss typically will be better than
10dB over the 750MHz to 1GHz range. Table 1 shows the
LO port input impedance vs. frequency. The return loss
S11 on the LO port can be improved at lower frequencies
by adding a shunt capacitor.
Table 1. LO Port Input Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY
(MHz)
S11
INPUT IMPEDANCE (Ω)
500
50.5 + j10.3
0.101
81.3
600
63.8 + j4.6
0.127
16.0
700
70.7 – j6.9
0.180
–15.2
800
70.7 – j20.3
0.237
–34.9
900
63.9 – j30.6
0.285
–50.5
1000
56.7 – j32.2
0.295
–61.4
1100
52.1 – j31.3
0.295
–69.1
1200
46.3 – j32.0
0.318
–78.0
MAG
ANGLE
Table 2. LO Port Input Impedance vs Frequency for EN = Low
and PLO = 0dBm
FREQUENCY
(MHz)
INPUT IMPEDANCE (Ω)
MAG
S11
ANGLE
500
37.3 + j43.4
0.464
79.7
600
72.1 + j74.8
0.545
42.1
700
184.7 + j77.8
0.630
11.7
800
203.6 – j120.8
0.696
–12.7
900
75.9 – j131.5
0.737
–32.6
1000
36.7 – j99.0
0.760
–48.8
1100
23.4 – j77.4
0.768
–62.4
1200
17.8 – j62.8
0.764
–74.3
RF Section
After up-conversion, the RF outputs of the I and Q mixers are
combined. An on-chip balun performs internal differential
to single-ended output conversion, while transforming the
output signal impedance to 50Ω. Table 3 shows the RF
port output impedance vs frequency.
Table 3. RF Port Output Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY
(MHz)
OUTPUT IMPEDANCE (Ω)
MAG
S22
ANGLE
500
22.8 + j4.9
0.380
165.8
600
30.2 + j11.4
0.283
141.9
700
42.7 + j12.9
0.159
111.8
800
53.7 + j3.0
0.045
37.2
900
52.0 – j10.1
0.101
–73.2
1000
44.8 – j15.2
0.168
–99.7
1100
39.1 – j15.1
0.206
–116.1
1200
35.7 – j13.1
0.224
–128.9
The input impedance of the LO port is different if the part
is in shutdown mode. The LO input impedance for EN =
Low is given in Table 2.
5558fa
10
LT5558
APPLICATIONS INFORMATION
The RF output S22 with no LO power applied is given in
Table 4.
Table 4. RF Port Output Impedance vs Frequency for EN = High
and No LO Power Applied
FREQUENCY
(MHz)(
S22
MAG
OUTPUT IMPEDANCE (Ω)
ANGLE
500
23.4 + j5.0
0.367
165.5
600
31.7 + j10.7
0.257
142.0
700
44.1 + j9.5
0.118
116.1
800
50.9 – j1.7
0.019
–60.8
900
46.8 – j11.1
0.118
–99.3
1000
40.8 – j13.5
0.178
–115.5
1100
36.6 – j12.6
0.209
–128.1
1200
34.3 – j10.5
0.222
–139.0
For EN = Low the S22 is given in Table 5.
To improve S22 for lower frequencies, a series capacitor
can be added to the RF output. At higher frequencies, a
shunt inductor can improve the S22. Figure 5 shows the
equivalent circuit schematic of the RF output.
Table 5. RF Port Output Impedance vs Frequency for EN = Low
FREQUENCY
(MHz)
Note that an ESD diode is connected internally from the
RF output to the ground. For strong output RF signal
levels (higher than 3dBm), this ESD diode can degrade
the linearity performance if an external 50Ω termination
impedance is connected directly to ground. To prevent this,
a coupling capacitor can be inserted in the RF output line.
This is strongly recommended during 1dB compression
measurements.
Enable Interface
Figure 6 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5558 is 1V.
To disable (shut down) the chip, the enable voltage must
be below 0.5V. If the EN pin is not connected, the chip is
disabled. This EN = Low condition is guaranteed by the
75kΩ on-chip pull-down resistor.
It is important that the voltage at the EN pin does not
exceed VCC by more than 0.5V. If this should occur, the
full-chip supply current could be sourced through the EN
pin ESD protection diodes, which are not designed for this
purpose. Damage to the chip may result.
S22
OUTPUT IMPEDANCE (Ω)
MAG
VCC
ANGLE
500
21.8 + j4.8
0.398
166.5
600
28.4 + j11.8
0.311
142.9
700
40.2 + j15.4
0.200
112.9
800
54.3 + j8.3
0.090
58.1
900
56.7 – j7.2
0.092
–43.3
1000
49.2 – j15.8
0.158
–83.8
1100
41.9 – j17.0
0.203
–105.0
1200
37.3 – j15.3
0.225
–120.0
EN
75k
25k
5558 F06
Figure 6. EN Pin Interface
Evaluation Board
VCC
21pF
RF
OUTPUT
52Ω
1pF
7nH
5558 F05
Figure 5. Equivalent Circuit Schematic of the RF Output
Figure 7 shows the evaluation board schematic. A good
ground connection is required for the LT5558’s Exposed
Pad. If this is not done properly, the RF performance will
degrade. Additionally, the Exposed Pad provides heat sinking for the part and minimizes the possibility of the chip
overheating. R1 (optional) limits the EN pin current in the
event that the EN pin is pulled high while the VCC inputs
are low. The application board PCB layouts are shown in
Figures 8 and 9.
5558fa
11
LT5558
APPLICATIONS INFORMATION
J1
J2
BBIM
BBIP
VCC
R1
100
VCC EN
J4
LO
IN
16
1
2
3
4
15
14
C2
100nF
13
BBMI GND BBPI VCC
EN
GND
GND
RF
LT5558
LO
GND
GND
GND
GND
BBMQ GND BBPQ VCC
5
6
7
12
BBQM
RF
OUT
10
9
17
8
C1
100nF
J5
J3
11
J6
GND
BBQP
BOARD NUMBER: DC1017A
5558 F07
Figure 7. Evaluation Circuit Schematic
Figure 9. Bottom Side of Evaluation Board
If the output power is high, the ACPR will be limited by the
linearity performance of the part. If the output power is
low, the ACPR will be limited by the noise performance of
the part. In the middle, an optimum ACPR is obtained.
Because of the LT5558’s very high dynamic-range, the test
equipment can limit the accuracy of the ACPR measurement. Consult Design Note 375 or the factory for advice
on ACPR measurement if needed.
The ACPR performance is sensitive to the amplitude mismatch of the BBIP and BBIM (or BBQP and BBQM) inputs.
This is because a difference in AC current amplitude will
give rise to a difference in amplitude between the even-order
harmonic products generated in the internal V-I converter.
As a result, they will not cancel out entirely. Therefore, it
is important to keep the amplitudes at the BBIP and BBIM
(or BBQP and BBQM) inputs as equal as possible.
Figure 8. Component Side of Evaluation Board
Application Measurements
The LT5558 is recommended for base-station applications
using various modulation formats. Figure 10 shows a
typical application.
Figure 11 shows the ACPR performance for CDMA2000
using one and three channel modulation. Figures 12 and 13
illustrate the 1- and 3-channel CDMA2000 measurement.
To calculate ACPR, a correction is made for the spectrum
analyzer noise floor (Application Note 99).
12
LO feedthrough and image rejection performance may
be improved by means of a calibration procedure. LO
feedthrough is minimized by adjusting the differential DC
offset at the I and the Q baseband inputs. Image rejection can be improved by adjusting the gain and the phase
difference between the I and the Q baseband inputs. The
LO feedthrough and Image Rejection can also change
as a function of the baseband drive level, as depicted in
Figure 14.
5558fa
LT5558
APPLICATIONS INFORMATION
5V
BASEBAND
GENERATOR
VCC 8, 13
LT5558
14
I-DAC
16
V-I
I-CHANNEL
11
0°
1
EN
100nF
×2
RF = 600MHz
TO 1100MHz
PA
90°
7
Q-DAC
5
Q-CHANNEL
BALUN
V-I
2, 4, 6, 9, 10, 12, 15, 17
3
VCO/SYNTHESIZER
5558 F10
Figure 10. 600MHz to 1.1GHz Direct Conversion Transmitter Application
–120
3-CH ACPR
3-CH ALTCPR
–130
–60
1-CH ACPR
–140
–70
1-CH NOISE
–80
1-CH ALTCPR
–150
3-CH NOISE
–90
–30
–20
–15
–10
–5
0
–25
RF OUTPUT POWER PER CARRIER (dBm)
–30
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
–50
ACPR, ALTCPR (dBc)
–110
DOWNLINK TEST
MODEL 64 DPCH
–160
DOWNLINK
TEST
MODEL
64 DPCH
–40
POWER IN 30kHz BW (dBm)
–40
–50
–60
–70
–80
–90
UNCORRECTED
SPECTRUM
–100
–110
–120
SPECTRUM ANALYSER NOISE FLOOR
CORRECTED SPECTRUM
–130
894
896
900
902
898
RF FREQUENCY (MHz)
5558 TA01b
Figure 11. ACPR, ALTCPR and Noise for CDMA2000 Modulation
–30
POWER IN 30kHz BW (dBm)
–40
DOWNLINK TEST
MODEL 64 DPCH
–50
–60
–70
–80
–90 UNCORRECTED
SPECTRUM
–100
CORRECTED
SPECTRUM
–110
–120
SPECTRUM ANALYSER NOISE FLOOR
–130
896.25 897.75 899.25 900.75 902.25 903.75
RF FREQUENCY (MHz)
5558 F12
Figure 12. 1-Channel CDMA2000 Spectrum
904
906
5558 F13
Figure 13. 3-Channel CDMA2000 Spectrum
Example: RFID Application
In Figure 15 the interface between the LTC1565 (U2, U3)
and the LT5558 is designed for RFID applications. The
LTC1565 is a seventh-order, 650kHz, continuous-time,
linear-phase, lowpass filter. The optimum output common-mode level of the LTC1565 is about 2.5V and the
optimum input common-mode level of the LT5558 is
around 2.1V and is temperature dependent. To adapt the
common-mode level of the LTC1565 to the LT5558, a level
shift network consisting of R1 to R6 and R11 to R16 is
used. The output common-mode level of the LTC1565 can
be adjusted by overriding the internally generated voltage
on pin 3 of the LTC1565.
5558fa
13
LT5558
APPLICATIONS INFORMATION
10
–40°C
PRF, LOFT (dBm), IR (dBc)
0
25°C
85°C
PRF
–10
–20
LOFT
–30
85°C
–40
U4’s stability while driving the large supply decoupling
capacitors C3 and C4. This corrected common-mode
voltage is applied to the common-mode input pins of U2
and U3 (pins 3). This results in a positive feedback loop
for the common mode voltage with a loop gain of about
-10dB. This technique ensures that the current compliance
on the baseband input pins of the LT5558 is not exceeded
under supply voltage or temperature extremes, and internal
diode voltage shifts or combinations of these. The core
current of the LT5558 is thus maintained at its designed
level for optimum performance. The recommended common-mode voltage applied to the inputs of the LTC1565
is about 2V. Resistor tolerances are recommended 1%
accuracy or better. The total current consumption is about
160mA and the noise floor at 20MHz offset is –147dBm/Hz
with 3.7dBm RF output power. For a 2VPP, DIFF baseband
input swing, the output power at fLO + fBB is 1.6dBm
and the third harmonic at fLO – 3fBB is –48.6dBm. For a
2.6VPP, DIFF input, the output power at fLO + fBB is 3.8dBm
and the third harmonic at fLO – 3fBB is –40.5dBm.
VCC = 5V
EN = HIGH
fLO = 900MHz,
fBBI = 2MHz, 0°
fBBQ = 2MHz, 90°
fRF = fBB + fLO
PLO = 0dBm
–40°C
–50
IR
–60
–40°C
–70
25°C
–80
–90
0
1
3
4
5
2
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
5558 F14
Figure 14. LO Feedthrough and Image Rejection vs
Baseband Drive Voltage After Calibration at 25°C
The common-mode voltage on the LT5558 is sampled
using resistors R7, R8, R17 and R18 and shifted up to
about 2.5V using resistor R9. Op amp U4 compensates
for the gain loss in the resistor networks and provides a
low-ohmic drive to steer the common-mode input pins
of U2 and U3. Resistors R20 and R21 improve op amp
RF = 3dBm MAX
VCC
4.5V to 5.25V
R24
3.32k
R22
22.1k
4
R20
249Ω
R5
3.57k
R6
R9
3.57k 88.7k
3
R22
22.1k
– 5
+U4
1
LT1797
R16
3.57k
2
R15
3.57k
R21
249Ω
C1, C2
2 × 0.1µF
U2
1
+OUT
+IN
BB
SOURCE 2
–IN
7
LTC1565-31
2.5VDC
3
C3
0.1µF
–OUT
8
4
GND
V–
V+
SHDN
R1
499Ω
8, 13
2.1VDC
R3
3.01k
R7
49.9k
R4
3.01k
R8
49.9k
5
R2
499Ω
16
2.1VDC
1
U1
LT5558
2.5VDC
6
11
VCC RF EN
14
7
BBPI
BBPQ
R17
49.9k
R13
3.01k
R18
49.9k
R14
3.01k
R11
499Ω
8
7
BBMQ
GND
LO
5
2.1VDC
R12
499Ω
U3
+OUT
+IN
–OUT
–IN
1
BB
2 SOURCE
LTC1565-31
2.5VDC
BBMI
2, 4, 6, 9, 10
12, 15, 17
2.1VDC
6
5
V+
SHDN
GND
V–
2.5VDC
3
4
C4
0.1µF
5558 F16
3
Figure 15. Baseband Interface Schematic of the LTC1565 with the LT5558 for RFID applications.
5558fa
14
LT5558
PACKAGE DESCRIPTION
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.15 ± 0.05
2.90 ± 0.05 (4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
4.00 ± 0.10
(4 SIDES)
0.75 ± 0.05
R = 0.115
TYP
15
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
16
0.55 ± 0.20
PIN 1
TOP MARK
(NOTE 6)
1
2.15 ± 0.10
(4-SIDES)
2
(UF16) QFN 10-04
0.200 REF
0.00 – 0.05
0.30 ± 0.05
0.65 BSC
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5558fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT5558
RELATED PARTS
PART NUMBER DESCRIPTION
Infrastructure
LT5511
High Linearity Upconverting Mixer
LT5512
DC to 3GHz High Signal Level Downconverting
Mixer
LT5514
LT5515
LT5516
LT5517
LT5518
LT5519
LT5520
LT5521
LT5522
LT5524
LT5526
Ultralow Distortion, IF Amplifier/ADC Driver with
Digitally Controlled Gain
1.5GHz to 2.5GHz Direct Conversion Quadrature
Demodulator
0.8GHz to 1.5GHz Direct Conversion Quadrature
Demodulator
40MHz to 900MHz Quadrature Demodulator
1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
0.7GHz to 1.4GHz High Linearity Upconverting
Mixer
1.3GHz to 2.3GHz High Linearity Upconverting
Mixer
10MHz to 3700MHz High Linearity Upconverting
Mixer
600MHz to 2.7GHz High Signal Level
Downconverting Mixer
Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
High Linearity, Low Power Downconverting Mixer
LT5527
400MHz to 3.7GHz High Signal Level
Downconverting Mixer
LT5528
1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
LT5568
700MHz to 1050MHz High Linearity Direct
Quadrature Modulator
LT5572
1.5GHz to 2.5GHz High Linearity Direct
Quadrature Modulator
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
LTC®5505
RF Power Detectors with >40dB Dynamic Range
LTC5507
100kHz to 1000MHz RF Power Detector
LTC5508
300MHz to 7GHz RF Power Detector
LTC5509
300MHz to 3GHz RF Power Detector
LTC5530
300MHz to 7GHz Precision RF Power Detector
LTC5531
300MHz to 7GHz Precision RF Power Detector
LTC5532
300MHz to 7GHz Precision RF Power Detector
LT5534
50MHz to 3GHz Loq RF Power Detector with
60dB Dynamic Range
LTC5536
Precision 600MHz to 7GHz RF Detector with Fast
Comparater
LT5537
Wide Dynamic Range Loq RF/IF Detector
High Speed ADCs
LTC2220-1
12-Bit, 185Msps ADC
LTC2249
LTC2255
14-Bit, 80Msps ADC
14-Bit, 125Msps ADC
COMMENTS
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC to 3GHz, 17dBm IIP3, Integrated LO Buffer
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended LO and RF
Ports, 4-Ch W-CDMA ACPR = –64dBc at 2.14GHz
17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO
Port Operation
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control
3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA,
–65dBm LO-RF Leakage
IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA
21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband Interface,
4-Ch W-CDMA ACPR = –66dBc at 2.14GHz
22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband
Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply
300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
44dB Dynamic Range, Temperature Compensated, SC70 Package
36dB Dynamic Range, Low Power Consumption, SC70 Package
Precision VOUT Offset Control, Shutdown, Adjustable Gain
Precision VOUT Offset Control, Shutdown, Adjustable Offset
Precision VOUT Offset Control, Adjustable Gain and Offset
±1dB Output Variation over Temperature, 38ns Response Time
25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to
+12dBm Input Range
Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply
Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz Full
Power BW
Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR
Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz Full
Power BW
5558fa
16 Linear Technology Corporation
LT 0706 REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2006