APTM100DA18TG Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NTC2 VBUS SENSE CR1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration OUT Q2 G2 S2 NTC1 G2 S2 VBUS VBUS SENSE 0/VBUS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT OUT S2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 43 33 172 ±30 210 780 25 50 3000 Unit V A V mΩ W A July, 2006 0/VBU S mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100DA18TG– Rev 2 VBUS VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C APTM100DA18TG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions mΩ V nA nF nC ns 155 40 1800 µJ 1246 2846 µJ 1558 Min 1000 Typ Tj = 25°C Tj = 125°C Max 250 500 Tj = 125°C 60 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C 350 Tj = 25°C 760 Tj = 125°C 3600 T c = 100°C www.microsemi.com Unit 12 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω IF = 60A VR = 670V di/dt = 200A/µs Max µA 18 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω IF = 60A IF = 120A IF = 60A Unit 244 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A R G = 2.5Ω VR=1000V Typ 10.4 1.76 0.32 372 Max 200 1000 210 5 ±150 48 Chopper diode ratings and characteristics IRM 180 3 VGS = 10V VBus = 500V ID = 43A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Unit V µA A 2.5 V July, 2006 Symbol ns nC 2–6 APTM100DA18TG– Rev 2 Electrical Characteristics APTM100DA18TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.16 0.9 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T July, 2006 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM100DA18TG– Rev 2 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : APTM100DA18TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.3 0.06 0.04 0.1 0.05 0.02 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 160 120 7V 80 6.5V 60 6V 40 5.5V 20 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 I D, Drain Current (A) 120 100 80 60 T J=25°C 40 20 5V 0 0 5 10 15 20 25 T J=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 1.1 VGS=20V 0.9 40 35 30 25 20 15 10 0.8 5 0 0 20 40 60 80 100 120 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance VGS=10V 1 3 45 Normalized to VGS =10V @ 21.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55°C 0 4–6 APTM100DA18TG– Rev 2 I D, Drain Current (A) VGS =15, 10&8V 100 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=21.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 1ms 10 Single pulse TJ =150°C TC=25°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 14 ID=43A TJ =25°C 12 VDS=500V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) VDS=200V V DS =800V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100DA18TG– Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100DA18TG APTM100DA18TG Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =2.5Ω T J=125°C L=100µH 120 80 40 tr 0 0 10 30 50 70 90 10 I D, Drain Current (A) Eon V DS =670V RG =2.5Ω T J=125°C L=100µH Eoff 2 1 5 4 2 Eoff 1 30 50 70 90 0 I D, Drain Current (A) 5 10 15 20 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 200 ZCS I DR, Reverse Drain Current (A) 250 Frequency (kHz) Eon 3 0 10 ZVS 150 50 Eoff VDS=670V ID=43A T J=125°C L=100µH 6 0 100 90 7 Switching Energy (mJ) Switching Energy (mJ) 3 30 50 70 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 5 4 tf 20 t d(on) 40 V DS =670V RG =2.5Ω T J=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 VDS=670V D=50% RG=2.5Ω T J=125°C Tc=75°C Hard switching 100 T J=25°C 10 0 15 20 25 30 35 ID, Drain Current (A) 40 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100DA18TG– Rev 2 July, 2006 10 T J=150°C