IRF IRF7458PBF Smps mosfet Datasheet

PD- 95268
IRF7458PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
S
l
l
l
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
30V
8.0mΩ
14A
1
8
S
2
7
S
3
6
4
5
G
A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 30
14
11
110
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
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1
8/17/04
IRF7458PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
2.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
6.3
7.0
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
8.0
VGS = 16V, ID = 14A
mΩ
9.0
VGS = 10V, ID = 11A
4.0
V
VDS = VGS, ID = 250µA
20
VDS = 24V, VGS = 0V
µA
100
VDS = 24V, VGS = 0V, TJ = 125°C
200
VGS = 24V
nA
-200
VGS = -24V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
39
11
8.7
29
10
4.6
22
5.0
2410
1100
110
Max. Units
Conditions
–––
S
VDS = 15V, ID = 11A
59
I D = 11A
17
nC
VDS = 15V
13
VGS = 10V
44
VGS = 0V, VDS = 16V
–––
VDD = 15V
–––
ID = 11A
ns
–––
RG = 1.8Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
280
11
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
2.3
A
–––
–––
110
–––
–––
–––
–––
–––
–––
0.82
0.68
51
87
52
93
1.3
–––
77
130
78
140
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 125°C, I S = 11A, VGS = 0V
TJ = 25°C, IF = 11A, VR= 20V
di/dt = 100A/µs
TJ = 125°C, IF = 11A, VR=20V
di/dt = 100A/µs
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IRF7458PbF
1000
1000
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
4.5V
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
100
TJ = 150 ° C
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
5.5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
10
4.5
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
6.0
ID = 14A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7458PbF
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
16
12
8
4
10
0
1
10
0
100
10
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
100
TJ = 150 ° C
10
TJ = 25 ° C
10us
100us
10
1ms
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
ID = 11A
VDS = 24V
VDS = 15V
VGS , Gate-to-Source Voltage (V)
100000
2.2
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Fig 6. On-Resistance Vs. Drain Current
IRF7458PbF
16
VDS
ID , Drain Current (A)
VGS
12
RD
D.U.T.
RG
+
-V DD
10V
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.020
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7458PbF
0.016
VGS = 6.0V
0.012
VGS = 10V
0.008
VGS = 16V
0.004
0
20
40
60
80
100
0.016
0.014
0.012
ID = 14A
0.010
0.008
0.006
120
4
ID , Drain Current (A)
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
QGD
800
+
V
- DS
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
BOTTOM
ID
5.0A
9.0A
11A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7458PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e
e1
.025 BAS IC
0.635 BASIC
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
MAX
H
e1
6X
MILLIMET ERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMET ER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7458PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 4.6mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
R G = 25Ω, IAS = 11A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
8
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