Chenmko CHM2108JPT N-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
CHM2108JPT
CURRENT 9.5 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* N-Channel Enhancement
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
D1 D1 D2 D2
5
6.20 (0.244)
5.80 (0.228)
Dimensions in millimeters
1
4
S1 G1 S2 G2
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
SO-8
TA = 25°C unless otherwise noted
Parameter
CHM2108JPT
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
9.5
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
35
2000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
62.5
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2005-02
RATING CHARACTERISTIC CURVES ( CHM2108JPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
20
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 12V,VDS = 0 V
+100
nA
VGS = -12V, VDS = 0 V
-100
nA
1.3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
0.6
VGS=4.5V, ID=10A
11
14
VGS=2.5V, ID=8A
14
20
VDS =10V, ID = 10A
16
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
2800
VDS = 10V, VGS = 0V,
f = 1.0 MHz
pF
520
380
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
31
VDS=15V, ID=10A
40
nC
4.6
VGS=5V
10
V DD= 10V
17
35
Rise Time
I D = 1.0A , VGS = 10 V
16
33
t off
Turn-Off Time
RGEN= 6 Ω
68
140
tf
Fall Time
31
60
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I = 2.3A , VGS = 0 V
(Note 1)
S
(Note 2)
2.3
A
1.2
V
RATING CHARACTERISTIC CURVES ( CHM4808JPT )
Typical Electrical Characteristics
25
50
VGS=4V
20
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6,5V
15
10
VGS=3V
5
40
30
20
25 C
10
-55 C
TJ=125 C
0
0
3
4
6
4
2
0
5
10
15
20
4
2.2
1.9
ID=12A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
Qg, Total Gate Charge (nC)
TJ, Junction Temperature( C)
Figure 3. Gate Charge
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
3
Figure 2. Transfer Characteristics
8
1.2
2
Figure 1. Output Characteristics
10 V =15V
DS
ID=12A
1.3
1
VGS, Gate-to-Source Voltage (V)
0
VTH, Normalized
Gate-Source Threshold Voltage
2
1
VDS, Drain-to-Source Voltage (V)
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
VGS, Gate to Source Voltage (V)
0
-25
0
25
50
75
100
125
150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
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