CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM2108JPT CURRENT 9.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM2108JPT Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 9.5 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 35 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 62.5 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2005-02 RATING CHARACTERISTIC CURVES ( CHM2108JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 12V,VDS = 0 V +100 nA VGS = -12V, VDS = 0 V -100 nA 1.3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 0.6 VGS=4.5V, ID=10A 11 14 VGS=2.5V, ID=8A 14 20 VDS =10V, ID = 10A 16 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 2800 VDS = 10V, VGS = 0V, f = 1.0 MHz pF 520 380 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr 31 VDS=15V, ID=10A 40 nC 4.6 VGS=5V 10 V DD= 10V 17 35 Rise Time I D = 1.0A , VGS = 10 V 16 33 t off Turn-Off Time RGEN= 6 Ω 68 140 tf Fall Time 31 60 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I = 2.3A , VGS = 0 V (Note 1) S (Note 2) 2.3 A 1.2 V RATING CHARACTERISTIC CURVES ( CHM4808JPT ) Typical Electrical Characteristics 25 50 VGS=4V 20 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V 15 10 VGS=3V 5 40 30 20 25 C 10 -55 C TJ=125 C 0 0 3 4 6 4 2 0 5 10 15 20 4 2.2 1.9 ID=12A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 Qg, Total Gate Charge (nC) TJ, Junction Temperature( C) Figure 3. Gate Charge Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 2. Transfer Characteristics 8 1.2 2 Figure 1. Output Characteristics 10 V =15V DS ID=12A 1.3 1 VGS, Gate-to-Source Voltage (V) 0 VTH, Normalized Gate-Source Threshold Voltage 2 1 VDS, Drain-to-Source Voltage (V) RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) VGS, Gate to Source Voltage (V) 0 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature