FST6310M thru FST6335M Silicon Power Schottky Diode VRRM = 10 V - 40 V IF(AV) = 60 A Features • High Surge Capability • Types from 10 V to 40 V VRRM D61-3M Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions FST6310M FST6315M FST6320M FST6330M FST6335M VRRM 10 15 20 Unit 30 35 V VRMS 7 11 14 21 25 V VDC Tj Tstg 10 -55 to 150 -55 to 150 15 20 -55 to 150 -55 to 150 30 35 -55 to 150 -55 to 150 V °C °C -55 to 150 -55 to 150 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions Average forward current (per pkg) IF(AV) TC = 125 °C 60 60 60 60 60 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 600 600 600 600 600 A Maximum instantaneous forward voltage (per leg) VF IFM = 30 A, Tj = 25 °C 0.70 7.0 0.70 0.70 0.70 V IR Tj = 25 °C Tj = 100 °C 1 10 1 10 1 10 1 10 1 10 mA Tj = 150 °C 30 30 30 30 30 1.20 1.20 1.20 1.20 1.20 Parameter Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) FST6310M FST6315M FST6320M FST6330M FST6335M Unit Thermal characteristics Thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 °C/W FST6310M thru FST6335M www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 FST6310M thru FST6335M Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3