isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF431 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 4.5 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ MAX UNIT 0.83 ℃/W 30 ℃/W ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 www.fineprint.cn isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF431 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance IGSS MIN TYPE MAX 450 UNIT V 2 4 V VGS=10V; ID=2.5A 2.0 Ω Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=450V; VGS=0 250 uA VSD Diode Forward Voltage IF=4.5A; VGS=0 1.4 V Ciss Input Capacitance 600 VDS=25V; Crss Reverse Transfer Capacitance VGS=0V; pF 100 fT=1MHz Coss tr Output Capacitance 30 Rise Time 11 17 15 23 ID=4.5A; td(on) Turn-on Telay Time VDD=250V; ns RG=12Ω tf td(off) Fall Time 35 53 Turn-off Delay Time 15 23 isc website：www.iscsemi.cn PDF pdfFactory Pro 2 www.fineprint.cn isc & iscsemi is registered trademark