Order this document by MGP15N38CL/D SEMICONDUCTOR TECHNICAL DATA This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. 15 AMPERES N–CHANNEL IGBT VCE(on) = 1.8 V 380 VOLTS CLAMPED • Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability C G C G E CASE 221A–09 STYLE 9 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCER CLAMPED Vdc VGE CLAMPED Vdc Collector Current — Continuous IC 15 Adc Total Power Dissipation Derate above 25°C PD 136 0.91 Watts W/°C TJ, Tstg – 55 to 175 °C Rating Gate–Emitter Voltage Operating and Storage Temperature Range UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Collector–to–Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, PEAK IL = 14.2 A, L = 3.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, PEAK IL = 10 A, L = 3.0 mH, Starting TJ = 150°C EAS mJ 300 150 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds RθJC RθJA 1.1 62.5 °C/W TL 260 °C This document contains information on a new product. Specifications and information herein are subject to change without notice. IGBT Motorola Motorola, Inc. 1998 Device Data 1 MGP15N38CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 350 380 410 — — — — 10 150 17 — 22 — — 10 1.3 — 1.8 4.4 2.1 — — — — — 2.0 1.8 8.0 19 — Cies — TBD — Coes — TBD — Cres — TBD — ( CC = 300 V,, IC = 6.5 A,, (V RG = 1.0 kΩ, L = 300 mH) td(off) — TBD — tf — TBD — ( CC = 10 V,, IC = 6.5 A,, (V RG = 1.0 kΩ, RL = 1.0 Ω) td(on) — TBD — tr — TBD — QT — TBD — Q1 — TBD — Q2 — TBD — Unit OFF CHARACTERISTICS Collector–Emitter Clamp Voltage (IC = 1.0 mA, TJ = – 40°C to 175°C) V(BR)CES Zero Gate Voltage Collector Current (VCE = 300 V, VGE = 0 V) (VCE = 300 V, VGE = 0 V, TJ = 150°C) Vdc µAdc ICES Gate–Emitter Clamp Voltage (IG = 5.0 mA) V(BR)GES Gate–Emitter Leakage Current (VGE = 10 V) Vdc µAdc IGES ON CHARACTERISTICS (1) Gate Threshold Voltage (VGE = VCE, IC = 1.0 mA) Threshold Temperature Coefficient (Negative) VGE(th) Collector–to–Emitter On–Voltage (VGE = 3.5 V, IC = 6.0 A) (VGE = 4.0 V, IC = 10 A, TJ = 150°C) VCE(on) Forward Transconductance (VCE = 5.0 V, IC = 10 A) Vdc mV/°C Volts gfe Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCC = 15 V, V VGE = 0 V, V f = 1.0 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (1) Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Gate Charge (VCC = 300 V, V IC = 15 A, A VGE = 5.0 V) mSec mSec nC (1) Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MGP15N38CL PACKAGE DIMENSIONS –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–09 ISSUE Z Motorola IGBT Device Data 3 MGP15N38CL Motorola reserves the right to make changes without further notice to any products herein. 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