, LJnc. j£i±£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Designer's Data Sheet MTM40N20 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C • Designer's Data — losS- Vos(on)- vGS(th) and SOA Specified at Elevated Temperature • Rugged — SOA is Power Dissipation Limited • Source-tc-Drain Diode Characterized for Use With Inductive Loads TT TMOS POWER FET 40 AMPERES RDS(on) = <>•«» OHM 209 VOLTS TMOS MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS " 1Mn' Gate-Source Voltage Continuous Non-repetitive (tp « 50 ^.S) Drain Current — Continuous — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Unit Symbol Valua VDSS VDGR 200 Vdc 200 Vdc VGS VGSM ID IDM PD *20 ±40 Vdc Vpk 40 200 Adc 250 2 Wans Tj, Tstg -65 to 150 °C RflJC 0.5 30 °C/W R«JA TL 300 °C W/°C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 6 seconds TO-204AE ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Char*et«ri$tlc Symbol Mln V(BR)DSS 200 — — 10 100 — — 100 nAdc 100 nAdc Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VQS = 0. ID = 0-25 mA> Zero Gate Voltage Drain Current (vDs = Rated VDSS- VGS = °> IDSS (VDS = Rated VDSS. VGS - 0, Tj = 125°C) Gate-Bodv Leakage Current, Forward (VQSF - 20 Vdc, VDS= °' Gate-Body Leakage Current, Reverse (VGSR - 20 Vdc, VDS= °' Vdc MTM40N20 !GSSF IGSSR /iAdc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted) Characteristic Min Max 2 1.6 4.5 4 — 0.08 — 3.8 3.2 9FS 10 — mhos C,ss — 5500 PF GOSS — 1500 ^rss — 500 Symbol Unit ON CHARACTERISTICS* Gate Threshold Voltage Vdc VGS(th) (VDS = VQS, ID = ' WAI Tj = 100°C Static Dram-Source On-Resistance (VQS = 10 Vdc, ID = 20 Adc) RDS(on) Drain-Source On-Voltage (Vgs = 10V) (ID = 40 Adc) (ID = 20 Adc, Tj = 100°C) VDS(on) Forward Transconductance (VDS = 15 V, ID = 20 A) Ohm Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 v. VQS = o, Output Capacitance f = 1 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS* (Tj = 100°CI Turn-On Delay Time Rise Time (d(on) — 60 (VDD - 25 v, ID = 0.5 Rated ID *r — 300 See Figures 13 and 14 tdloff) „ 400 tf — 250 85 (Typ) 95 Oge 45 (Typ) — Qgd 40 (Typ) - 2.0 (Typ) 25 Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Dram Charge (VDS ~ o.a Rated VDSSID = Rated ID, VGS = 10V) See Figure 12 Q9 ns nC SOURCE DRAIN DIODE CHARACTERISTICS'1 VSD Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS = Rated IQ, VGS ~ °) ton Vdc Limited by stray inductance trr 200 (Typ) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Ld 5 (Typ) Internal Source Inductance (Measured from the source pin, 0 25" from the package to the source bond pad) Ls - 1 « INTERNAL PACKAGE INDUCTANCE •Pulse Test. Pulse Width •; 300 ^s. Duty Cycle f, 2% 12.5 (Typ) nH