MICROWAVE CORPORATION HMC314 v02.0802 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features Ideal Broadband Gain Stage for: P1dB Output Power: +18 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +29 dBm • 3.5 GHz Wireless Local Loop Gain: 12 dB • Low Profile Portable Wireless Devices Single Supply: 5V • WLAN Systems Ultra Small Package: SOT26 Functional Diagram General Description The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single positive supply. This amplifier also incorporates a power down feature. When the “Vpd” pin is held low, the amplifier will shut down. The surface mount SOT26 amplifier can be used as a broadband gain stage for wideband applications. The amplifier provides 12 dB of gain and +22 dBm of saturated power while operating from a single positive +5v supply. The HMC314 is packaged in an ultra small SOT26 package at a height of only 1.45mm. Electrical Specifications, TA = +25° C Vs = +5V, Rbias = 10 Ohm Parameter Units Min. Frequency Range Max. 0.7 - 4.0 Gain 7 Gain Variation Over Temperature GHz 12 16 dB 0.015 0.025 dB/°C Input Return Loss 6 12 dB Output Return Loss 2 6 dB Reverse Isolation 22 30 dB Output Power for 1 dB Compression (P1dB) @ 1 GHz 15 18 dBm Saturated Output Power (Psat) @ 1 GHz 19 22 dBm Output Third Order Intercept (IP3) @ 1 GHz 26 29 dBm 60 ns Supply Current (Icc) 150 mA Control Voltage (Vpd) 0/5 Volts Control Current (Ipd) .001/12 mA Switching Speed 8 - 74 Typ. On/Off For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC314 v02.0802 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz 20 20 S11 S21 S22 15 10 + 25 C + 65 C - 40 C 15 5 GAIN (dB) RESPONSE (dB) 8 Gain vs. Temperature 0 -5 10 -10 5 -15 -20 -25 0 1 2 3 4 5 6 0 0.5 7 1 1.5 2 FREQUENCY (GHz) Input Return Loss vs. Temperature 3.5 4 4.5 5 0 + 25 C + 65 C - 40 C -4 RETURN LOSS (dB) -5 -10 -15 -20 -8 -12 + 25 C + 65 C - 40 C -16 1 1.5 2 2.5 3 3.5 4 4.5 -20 0.5 5 1 1.5 2 FREQUENCY (GHz) 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 + 25 C + 65 C - 40 C -10 ISOLATION (dB) RETURN LOSS (dB) 3 Output Return Loss vs. Temperature 0 -25 0.5 2.5 FREQUENCY (GHz) AMPLIFIERS - SMT Gain & Return Loss -20 -30 -40 -50 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 75 HMC314 v02.0802 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Psat vs. Temperature 25 25 20 20 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 15 10 + 25 C + 65 C - 40 C 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 15 10 + 25 C + 65 C - 40 C 5 0 0.5 5 1 1.5 2 FREQUENCY (GHz) 2.5 3 3.5 4 5 Power Compression @ 3 GHz 25 25 Pout (dBm), Gain (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) 20 15 10 5 0 -5 20 15 10 5 Pout (dBm) Gain (dB) PAE (%) 0 -5 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) 10 12 14 16 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) 10 Output IP3 vs. Temperature 40 35 IP3 (dBm) 30 25 20 15 + 25 C + 65 C - 40 C 10 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) 8 - 76 4.5 FREQUENCY (GHz) Power Compression @ 1 GHz Pout (dBm), Gain (dB), PAE (%) AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 14 16 HMC314 v02.0802 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Truth Table 8 Collector Bias Voltage (Vcc) +5.0 Vdc Vs Vctl Is Ictl State Control Voltage Range (Vpd) -0.2 to 3.5 Vdc 5V 5V 150 mA 12 mA On RF Input Power (RFin)(Vs = +5.0 Vdc) +20 dBm 5V 0V <1 µA <1 µA Power Down Junction Temperature 150 °C Continuous Pdiss (T = 65 °C) (derate 6.57 mW/°C above 65 °C) 0.558 W Thermal Resistance (junction to lead) 152 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +65 °C Outline Drawing AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 77 v02.0802 MICROWAVE CORPORATION AMPLIFIERS - SMT 8 8 - 78 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Application Circuit Note: 1. Requires a 10 Ohm resistor (Rbias) in series with the Vcc line and a 160 Ohm resistor in series with the Vpd line. 2. Requires Blocking Capacitors on Pins 1 & 3. 3. Requires bypass capacitors on Vcc and Vpd line as shown. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0802 MICROWAVE CORPORATION HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1, J2 PC Mount SMA Connector J3, J4, J5 DC Pins U1 HMC314 PCB* 104198 Evaluation PCB 1.5” x 1.5” The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 79