APTM20SKM05 Buck chopper MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application · · AC and DC motor control Switched Mode Power Supplies Features · · · · G1 VBUS 0/VBUS Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT S1 Benefits · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 317 237 1268 ±30 5 1136 89 50 2500 Unit V A V mW W A May, 2004 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20SKM05 – Rev 2 Symbol VDSS APTM20SKM05 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 500µA Min 200 Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ Tj = 25°C Tj = 125°C 3 Max Unit V 200 1000 5 5 ±200 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 300A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 172 188 28 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 1.2W Rise Time Typ 27.4 8.72 0.38 448 56 ns 81 99 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 1852 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 2432 µJ 1820 µJ 2124 Diode ratings and characteristics Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 50% duty cycle IF = 240A IF = 480A IF = 240A IF = 240A VR = 133V di/dt = 800A/µs IF = 240A VR = 133V di/dt = 800A/µs Min Tj = 125°C Typ 240 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 240 Tj = 125°C 1000 Tc = 85°C Max Unit A 1.15 V ns May, 2004 VF Test Conditions nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM20SKM05 – Rev 2 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM20SKM05 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink For terminals M6 M5 Package Weight 2500 -40 -40 -40 3 2 Typ Max 0.11 0.23 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM20SKM05 – Rev 2 May, 2004 Package outline APTM20SKM05 Typical Performance Curve Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.9 0.1 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 800 7.5V 600 7V 400 6.5V 6V 200 ID, Drain Current (A) 600 400 TJ=25°C 200 TJ=125°C 5.5V 0 0 0 5 10 15 20 25 2 VDS, Drain to Source Voltage (V) 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.2 320 Normalized to VGS=10V @ 158.5A 1.15 1.1 VGS=10V 1.05 1 VGS=20V 0.95 0.9 ID, DC Drain Current (A) 280 240 200 160 120 80 40 0 0 100 200 300 ID, Drain Current (A) 400 25 50 75 100 125 TC, Case Temperature (°C) 150 May, 2004 RDS(on) Drain to Source ON Resistance T J=-55°C APT website – http://www.advancedpower.com 4–6 APTM20SKM05 – Rev 2 ID, Drain Current (A) VGS=15&10V Transfert Characteristics 800 1000 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 0.7 1000 limited by RDSon 100µs 100 1ms 10ms 10 DC line Single pulse TJ=150°C 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss Coss 10000 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=300A 10 TJ=25°C V =100V DS 8 VDS=160V 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) May, 2004 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 158.5A 10000 1.2 1.1 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5–6 APTM20SKM05 – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20SKM05 APTM20SKM05 Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=1.2Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 50 150 250 350 450 550 50 150 ID, Drain Current (A) 3 450 550 6 Eon Switching Energy (mJ) Eon and Eoff (mJ) 4 350 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=1.2Ω TJ=125°C L=100µH 250 ID, Drain Current (A) 5 Eoff 2 1 0 VDS=133V ID=300A TJ=125°C L=100µH 5.5 5 4.5 Eoff Eon 4 3.5 3 2.5 2 50 150 250 350 450 550 0 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=133V D=50% RG=1.2Ω TJ=125°C 300 250 200 150 100 50 0 70 110 150 190 230 ID, Drain Current (A) 5 7.5 10 12.5 15 270 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20SKM05 – Rev 2 May, 2004 30 2.5 Gate Resistance (Ohms) 350 Frequency (kHz) tf 40 td(on) 20 VDS=133V RG=1.2Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current