Vishay BAT86S Small signal schottky diode Datasheet

BAT86S
Vishay Semiconductors
Small Signal Schottky Diode
Features
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAT86S
Ordering code
Type Marking
Remarks
BAT86S-TR or BAT86S-TAP
BAT86S
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Symbol
Value
VR
50
Unit
V
Peak forward surge current
tp ≤ 10 ms
IFSM
5
A
Repetitive peak forward current
tp ≤ 1 s
IFRM
500
mA
IF
200
mA
IFAV
200
mA
Forward continuous current
Average forward current
Document Number 85514
Rev. 1.8, 23-Jul-10
PCB mounting, l = 4 mm;
VRWM = 25 V, Tamb = 50 °C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAT86S
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Test condition
Symbol
Max.
Unit
IF = 0.1 mA
VF
300
mV
Typ.
IF = 1 mA
VF
380
mV
IF = 10 mA
VF
450
mV
IF = 30 mA
VF
600
mV
IF = 100 mA
VF
900
mV
VR = 40 V
IR
5
µA
CD
8
pF
VR = 1 V, f = 1 MHz
Diode capacitance
Min.
Typical Characteristics
10000
500
VR = 50 V
450
V R = V RRM
400
350
300
250
PR - Limit
at 100 % VR
200
150
100
PR - Limit
at 80 % VR
R thJA = 540 K/W
50
0
25
15827
50
75
100
125
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
www.vishay.com
2
I R - Reverse Current (µA)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
1000
100
10
1
25
150
15828
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
For technical questions within your region, please contact one of the following: Document Number 85514
[email protected], [email protected], [email protected]
Rev. 1.8, 23-Jul-10
BAT86S
Vishay Semiconductors
1000
10
9
C D - Diode Capacitance (pF)
IF - Forward Current (A)
Tj = 125 °C
100
Tj = 25 °C
10
1
0.1
0
0.5
1.0
V F - Forward Voltage (V)
15829
7
6
5
4
3
2
1
0
1.5
15830
Figure 3. Forward Current vs. Forward Voltage
f = 1 MHz
8
0.1
1
10
100
V R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85514
Rev. 1.8, 23-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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