ON MC74LVX257DTR2 Quad 2-channel multiplexer with 3-state output Datasheet

MC74LVX257
Quad 2−Channel Multiplexer
with 3−State Outputs
The MC74LVX257 is an advanced high speed CMOS quad
2−channel multiplexer fabricated with silicon gate CMOS technology.
It consists of four 2−input digital multiplexers with common select
(S) and enable (OE) inputs. When (OE) is held High, selection of data
is inhibited and all the outputs go Low.
The select decoding determines whether the A or B inputs get routed
to the corresponding Y outputs.
The inputs tolerate voltages up to 7.0 V, allowing the interface of
5.0 V systems to 3.0 V systems.
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MARKING
DIAGRAMS
16
Features
•
•
•
•
•
•
•
•
•
•
•
•
SOIC−16
D SUFFIX
CASE 751B
High Speed: tPD = 4.5 ns (Typ) at VCC = 3.3 V
Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C
LVX257
AWLYWW
1
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
16
Balanced Propagation Delays
LVX
257
ALYW
TSSOP−16
DT SUFFIX
CASE 948F
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
1
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
Chip Complexity: FETs = 100; Equivalent Gates = 25
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
Pb−Free Packages are Available*
16
SOEIAJ−16
M SUFFIX
CASE 966
LVX257
ALYW
1
A
WL or L
Y
WW or W
=
=
=
=
Assembly Location
Wafer Lot
Year
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 3
1
Publication Order Number:
MC74LVX257/D
MC74LVX257
I0a
S
1
16
VCC
I1a
A0
2
15
OE
I0b
B0
3
14
A3
Y0
4
13
B3
A1
5
12
Y3
B1
6
11
A2
Y1
7
10
B2
GND
8
9
Y2
I1b
I0c
I1c
I0d
I1d
OE
2
4
Za
3
5
7
Zb
6
14
12
Zc
13
11
9
Zd
10
15
Figure 1. Pin Assignment
S
1
Figure 2. Expanded Logic Diagram
OE
S
A0
B0
A1
B1
A2
B2
A3
B3
15
1
2
3
5
6
EN
G1
1
1
MUX
4
7
11
10
14
13
9
12
Y0
FUNCTION TABLE
Y1
Inputs
OE
Y2
S
Outputs
Y0 − Y3
H
X
Z
L
L
A0 −A3
L
H
B0 −B3
A0 − A3, B0 − B3 = the levels
of the respective Data−Word
Inputs.
Y3
Figure 3. IEC Logic Symbol
ORDERING INFORMATION
Package
Shipping†
MC74LVX257D
SOIC−16
48 Units / Rail
MC74LVX257DG
SOIC−16
(Pb−Free)
48 Units / Rail
MC74LVX257DR2
SOIC−16
2500 Tape & Reel
MC74LVX257DR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
MC74LVX257DT
TSSOP−16*
96 Units / Rail
MC74LVX257DTR2
TSSOP−16*
2500 Tape & Reel
MC74LVX257M
SOEIAJ−16
50 Units / Rail
MC74LVX257MEL
SOEIAJ−16
2000 Tape & Reel
MC74LVX257MELG
SOEIAJ−16
(Pb−Free)
2000 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
MC74LVX257
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
Positive DC Supply Voltage
−0.5 to +7.0
V
VIN
Digital Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
−0.5 to VCC +0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
20
mA
IOUT
DC Output Current, per Pin
25
mA
ICC
DC Supply Current, VCC and GND Pins
75
mA
PD
Power Dissipation in Still Air
200
180
mW
TSTG
Storage Temperature Range
VESD
ESD Withstand Voltage
ILATCHU
Latchup Performance
SOIC Package
TSSOP
−65 to +150
°C
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>2000
>200
>2000
V
Above VCC and Below GND at 125°C (Note 4)
300
mA
143
164
°C/W
P
JA
Thermal Resistance, Junction−to−Ambient
SOIC Package
TSSOP
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
2.0
3.6
V
VCC
DC Supply Voltage
VIN
DC Input Voltage
0
5.5
V
DC Output Voltage
0
VCC
V
−40
85
°C
0
100
ns/V
VOUT
TA
Operating Temperature Range, all Package
Types
tr, tf
Input Rise or Fall Time
VCC = 3.3 V + 0.3 V
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3
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
MC74LVX257
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
Symbol
Parameter
Condition
(V)
Min
0.75 VCC
0.7 VCC
0.7 VCC
VIH
Minimum High−Level
Input Voltage
2.0
3.0
3.6
VIL
Maximum Low−Level
Input Voltage
2.0
3.0
3.6
VOH
High−Level Output
Voltage
IOH = −50 A
IOH = −50 A
IOH = −4 mA
2.0
3.0
3.0
VOL
Low−Level Output
Voltage
IOL = 50 A
IOL = 50 A
IOL = 4 mA
2.0
3.0
3.0
IOZ
Maximum 3−State
Leakage Current
VIN = VIH or VIL
VOUT = VCC or GND
IIN
Input Leakage Current
ICC
Maximum Quiescent
Supply Current
(per package)
−40°C ≤ TA ≤ 85°C
TA = 25°C
Typ
Max
Min
0.75 VCC
0.7 VCC
0.7 VCC
0.25 VCC
0.3 VCC
0.3 VCC
1.9
2.9
2.58
Max
2.0
3.0
0.0
0.0
Unit
V
0.25 VCC
0.3 VCC
0.3 VCC
1.9
2.9
2.48
V
V
0.1
0.1
0.36
0.1
0.1
0.44
V
3.6
±0.1
±1.0
A
VIN = 5.5 V or GND
0 to 3.6
±0.1
±1.0
A
VIN = VCC or GND
3.6
2.0
40
A
1.0
1.0
ÎÎÎÎ
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ÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns
−40°C ≤ TA ≤ 85°C
TA = 25°C
Symbol
tPLH,
tPHL
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
CIN
Parameter
Maximum Propagation
Delay, A or B to Y
Maximum Propagation
Delay, S to Y
Maximum Output
Enable, Time, OE to Y
Maximum Output
Disable, Time, OE to Y
Min
Test Conditions
Typ
Max
Min
Max
Unit
ns
VCC = 2.7 V
CL = 15pF
CL = 50pF
6.5
9.5
10.0
14.0
1.0
1.0
15.0
18.5
VCC = 3.3 V ± 0.3 V
CL = 15pF
CL = 50pF
4.5
7.5
8.0
12.0
1.0
1.0
10.0
13.5
VCC = 2.7 V
CL = 15pF
CL = 50pF
8.0
10.5
12.0
15.5
1.0
1.0
17.0
20.0
VCC = 3.3 V ± 0.3 V
CL = 15pF
CL = 50pF
6.0
8.5
10.0
13.5
1.0
1.0
12.0
15.5
VCC = 2.7 V
RL = 1 k
CL = 15pF
CL = 50pF
7.5
10.5
11.5
15.0
1.0
1.0
16.5
18.0
VCC = 3.3 V ± 0.3 V
RL = 1 k
CL = 15pF
CL = 50pF
5.5
8.5
9.5
13.0
1.0
1.0
11.5
15.0
VCC = 2.7
RL = 1 k
CL = 50pF
13.0
17.0
1.0
18.0
VCC = 3.3 V ± 0.3 V
RL = 1 k
CL = 50pF
12
17.0
1.0
18.0
4
10
Maximum Input
Capacitance
10
ns
ns
ns
pF
Typical @ 25°C, VCC = 3.3 V
CPD
20
Power Dissipation Capacitance (Note 5)
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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4
MC74LVX257
NOISE CHARACTERISTICS Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 3.3 V
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.5
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.3
−0.5
V
VIHD
Minimum High Level Dynamic Input Voltage
2.0
V
VILD
Maximum Low Level Dynamic Input Voltage
0.8
V
OE
VCC
50%
GND
VCC
A, B or S
50%
tPLH
Y
tPZL
GND
tPHL
tPLZ
50% VCC
Y
tPZH
50% VCC
VOH − 0.3V
HIGH
IMPEDANCE
Figure 5. Switching Waveform
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
VOL + 0.3V
tPHZ
50% VCC
Y
Figure 4. Switching Waveform
HIGH
IMPEDANCE
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
OUTPUT
1 k
CL *
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
Figure 6. Test Circuit
Figure 7. Test Circuit
INPUT
Figure 8. Input Equivalent Circuit
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5
MC74LVX257
PACKAGE DIMENSIONS
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
16
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
7
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0
7
0.229
0.244
0.010
0.019
S
TSSOP−16
DT SUFFIX
CASE 948F−01
ISSUE A
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
M
N
F
DETAIL E
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
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6
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
N−N
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
MILLIMETERS
INCHES
DIM MIN
MAX
MIN
MAX
A
4.90
5.10 0.193 0.200
B
4.30
4.50 0.169 0.177
C
−−−
1.20
−−− 0.047
D
0.05
0.15 0.002 0.006
F
0.50
0.75 0.020 0.030
G
0.65 BSC
0.026 BSC
H
0.18
0.28 0.007
0.011
J
0.09
0.20 0.004 0.008
J1
0.09
0.16 0.004 0.006
K
0.19
0.30 0.007 0.012
K1
0.19
0.25 0.007 0.010
L
6.40 BSC
0.252 BSC
−W−
M
0
8
0
8
MC74LVX257
SOEIAJ−16
M SUFFIX
CASE 966−01
ISSUE O
16
LE
9
Q1
M
E HE
1
8
L
DETAIL P
Z
D
e
VIEW P
A
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
A1
b
0.13 (0.005)
c
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
0.10 (0.004)
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7
MILLIMETERS
MIN
MAX
−−−
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 0
0.70
0.90
−−−
0.78
INCHES
MIN
MAX
−−−
0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 0
0.028
0.035
−−−
0.031
MC74LVX257
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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