Infineon BSP321P Sipmos small-signal-transistor Datasheet

BSP321P
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• P-Channel
• Enhancement mode
V DS
-100
V
R DS(on),max
900
mΩ
ID
-0.98
A
• Normal level
• Avalanche rated
PG-SOT-223
• Pb-free lead plating; RoHS compliant
Type
Package
Tape and Reel Information
Marking
Lead free
Packing
BSP321P
PG-SOT-223
L6327: 1000 pcs/reel
BSP321P
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Unit
T C=25 °C
-0.98
A
T C=70 °C
-0.79
-3.9
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current
I D,pulse
T C=25 °C
Avalanche energy, single pulse
E AS
I D=-0.98 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
ESD Class
T C=25 °C
JESD22-A114-HBM
mJ
±20
V
1.8
W
-55 ... 150
°C
1A (250V to 500V)
260 °C
Soldering temperature
55/150/56
IEC climatic category; DIN IEC 68-1
Rev 1.03
57
page 1
2009-02-16
BSP321P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
minimal footprint,
steady state
-
-
115
6 cm2 cooling area1),
steady state
-
-
70
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 µA
-100
-
-
Gate threshold voltage
V GS(th)
V DS=V GS,I D=-380 µA
-2.1
-3.0
-4
Zero gate voltage drain current
I DSS
V DS=-100 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
V DS=-100 V, V GS=0 V,
T j=150 °C
-
-10
-100
V
µA
Gate-source leakage current
I GSS
V GS=-20 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-10 V, I D=-0.98 A
-
689
900
mΩ
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-0.79 A
0.6
1.2
-
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 1.03
page 2
2009-02-16
BSP321P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
240
319
-
62
82
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
28
42
Turn-on delay time
t d(on)
-
5.9
8.8
Rise time
tr
-
4.4
6.6
Turn-off delay time
t d(off)
-
16.5
24.7
Fall time
tf
-
8.5
12.7
Gate to source charge
Q gs
-
1.1
1.4
Gate to drain charge
Q gd
-
4
6
Gate charge total
Qg
-
9
12
Gate plateau voltage
V plateau
-
4.5
-
V
-
-
-0.98
A
-
-
-3.9
-
0.84
1.2
V
-
47
-
ns
-
96
-
nC
V GS=0 V, V DS=-25 V,
f =1 MHz
V DD=-50 V, V GS=10 V, I D=-0.98 A,
R G=6 Ω
pF
ns
Gate Charge Characteristics 2)
V DD=-80 V, I D=0.98 A, V GS=0 to -10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
2)
Rev 1.03
Q rr
T C=25 °C
V GS=0 V, I F=0.98 A,
T j=25 °C
V R=50 V, I F=|I S|,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
page 3
2009-02-16
BSP321P
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); |V GS|≥10 V
2
1
0.8
1.5
-I D [A]
P tot [W]
0.6
1
0.4
0.5
0.2
0
0
0
40
80
120
160
0
40
80
120
160
T A [°C]
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
101
102
limited by on-state
resistance
100 µs
0.5
0.2
100
101
1 ms
Z thJS [K/W]
-I D [A]
0.1
10 ms
100 ms
10-1
0.05
0.02
100
0.01
DC
single pulse
10-2
10-1
10
0
10
1
10
2
10
3
-V DS [V]
Rev 1.03
10-5
10-4
10-3
10-2
10-1
100
101
102
t p [s]
page 4
2009-02-16
BSP321P
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
4
2
-4 V
-10 V
-6 V
-4.5 V
-7 V
-5 V
1.6
2
R DS(on) [Ω]
-I D [A]
3
-5 V
-6 V
-7 V
-4.5 V
1
1.2
0.8
-8 V
-10 V
-4 V
0
0.4
0
2
4
6
8
10
0
1
-V DS [V]
2
3
4
3
4
-I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
4
3
3
125 °C
2
g fs [S]
-I D [A]
25 °C
2
1
1
0
0
0
2
4
6
8
-V GS [V]
Rev 1.03
0
1
2
-I D [A]
page 5
2009-02-16
BSP321P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-0.98 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-380 µA
5
2.5
2
min.
1.5
-V GS(th) [V]
R DS(on) [Ω]
4
98 %
1
typ.
3
max.
2
0.5
typ.
1
0
-60
-20
20
60
100
-60
140
-20
20
60
100
140
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
103
101
150 °C, typ
100
I F [A]
C [pF]
Ciss
25 °C, typ
102
150 °C, 98%
10-1
Coss
25 °C, 98%
Crss
101
10-2
0
20
40
60
80
100
0.5
1
1.5
-V SD [V]
-V DS [V]
Rev 1.03
0
page 6
2009-02-16
BSP321P
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=-0.98 A pulsed
parameter: T j(start)
parameter: V DD
100
12
25 °C
50 V
100 °C
10
20 V
80 V
125 °C
-I AV [A]
- VGS [V]
8
6
4
2
0
10-1
100
101
102
0
103
2
t AV [µs]
4
6
8
10
- Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
120
V GS
Qg
115
-V BR(DSS) [V]
110
105
V g s(th)
100
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
Q g ate
Q gd
140
T j [°C]
Rev 1.03
page 7
2009-02-16
BSP321P
Package Outline: PG-SOT-223
Footprint:
Packaging:
Dimensions in mm
Rev 1.03
page 8
2009-02-16
BSP321P
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev 1.03
page 9
2009-02-16
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