StrongIRFET™ IRFH8303PbF HEXFET® Power MOSFET VDSS 30 V RDS(on) max 1.10 m Qg (typical) 58 nC RG (typical) 1.0 Ω ID (@TC (Bottom) = 25°C) 100 A PQFN 5 x 6 mm Applications Control MOSFET for synchronous buck converter Features Low RDS(ON) (≤ 1.10 m) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Package Type IRFH8303PbF PQFN 5 mm x 6 mm Benefits Lower Conduction Losses Enable better Thermal Dissipation Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH8303TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 43 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 280 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 177 IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation ID @ TC = 25°C PD @TC(Bottom) = 25°C A 100 400 3.7 Power Dissipation W 156 Linear Derating Factor 0.029 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes through are on page 8 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 24, 2013 IRFH8303PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Avalanche Characteristics Min. 30 ––– ––– ––– Typ. ––– 21 0.90 1.30 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– mV/°C Reference to 25°C, ID = 1.0mA 1.10 m VGS = 10V, ID = 50A 1.70 VGS = 4.5V, ID = 50A 1.2 ––– ––– ––– ––– ––– 158 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 1.7 -5.7 ––– ––– ––– ––– ––– 119 58 14 8 19 17 27 33 1.0 21 91 48 65 7736 1363 743 2.2 ––– 1.0 150 100 -100 ––– 179 87 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Parameter Single Pulse Avalanche Energy EAS Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ. ––– Min. ––– Typ. ––– ––– ––– V VDS = VGS, ID = 150µA mV/°C µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20 V VGS = -20 V S VDS = 15 V, ID = 50A VGS = 10V, VDS = 15V, ID = 50A VDS = 15V VGS = 4.5V ID = 50A nC nC VDS = 16V, VGS = 0V ns VDD = 30V, VGS = 4.5V ID = 50A RG = 1.8 pF VGS = 0V VDS = 24V ƒ = 1.0MHz Max. 355 Units mJ Max. Units Conditions 100 A MOSFET symbol showing the integral reverse 400 p-n junction diode. 1.0 V TJ = 25°C, IS=50A, VGS=0V 50 ns TJ = 25°C, IF = 50A, VDD = 15V 77 nC di/dt = 200A/µs D G S ––– ––– ––– ––– 33 51 Thermal Resistance Junction-to-Case Typ. ––– Max. 0.8 Units RJC (Bottom) Parameter RJC (Top) Junction-to-Case ––– 21 °C/W RJA Junction-to-Ambient ––– 34 RJA (<10s) Junction-to-Ambient ––– 21 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 24, 2013 IRFH8303PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 4.5V 4.0V 3.5V 3.0V 2.5V BOTTOM 100 10 2.5V 60µs PULSE WIDTH 2.5V 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 100 TJ = 150°C TJ = 25°C 10 V DS = 15V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) 1.8 1.0 ID = 50A V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 V GS, Gate-to-Source Voltage (V) 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 50A Coss = Cds + Cgd 10000 Ciss Coss Crss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 12.0 V DS= 24V V DS= 15V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 7.0V 4.5V 4.0V 3.5V 3.0V 2.5V www.irf.com © 2013 International Rectifier 0 20 40 60 80 100 120 140 160 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback October 24, 2013 IRFH8303PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 TJ = 150°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R (on) DS 100µsec 1msec 100 Limited by package 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse V GS = 0V 0.1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 1 10 100 VDS, Drain-to-Source Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 300 2.6 V GS(th) , Gate threshold Voltage (V) Limited by package 250 ID, Drain Current (A) DC 200 150 100 50 0 2.2 1.8 1.4 ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 1.0 0.6 25 50 75 100 125 150 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 24, 2013 5.0 1600 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFH8303PbF ID = 50A 4.0 3.0 2.0 TJ = 125°C 1.0 TJ = 25°C ID 14A 25A BOTTOM 50A 1400 TOP 1200 1000 800 600 400 200 0 0.0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) V GS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart = 25°C (Single Pulse) 100 10 1 1.0E-06 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 24, 2013 IRFH8303PbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform Submit Datasheet Feedback October 24, 2013 IRFH8303PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 24, 2013 IRFH8303PbF PQFN 5x6 Outline "B" Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial Qualification Level (per JEDEC JESD47F†† guidelines) MSL1 (per JEDEC J-STD-020D††) PQFN 5mm x 6mm Moisture Sensitivity Level Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Starting TJ = 25°C, L = 0.28mH, RG = 50, IAS = 50A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 100A by source bonding technology. Revision History Date 10/22/2013 Comments Added the Rdson at Vgs = 4.5V values, on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 24, 2013