DATA SHEET GBJ20005 THRU GBJ2010 SEMICONDUCTOR 20A GLASS PASSIVATED BRIDGE RECTIFIER FEATURES GBJ •Glass Passivated Die Construction •High Case Dielectric Strength of 1500VRMS •Low Reverse Leakage Current •Surge Overload Rating to 240A Peak •Ideal for Printed Circuit Board Applications A K Classification 94V-0 _ J Index, File Number E94661 •High temperature soldering : 260OC / 10 seconds at terminals •Pb free product at available : 99% Sn above meet RoHS environment substance directive request B A 29.70 30.30 19.70 20.30 M C 17.00 18.00 D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 P I 0.90 1.10 J 2.30 2.70 R K N C I MECHANICAL DATA G •Case: Molded Plastic E Max B S D H Min L •Plastic Material - UL Flammability •UL Listed Under Recognized Component Dim E •Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 •Polarity: Molded on Body 3.0 X 45° L 4.40 4.80 M 3.40 3.80 N 3.10 3.40 P 2.50 2.90 R 0.60 0.80 S 10.80 11.20 All Dimensions in mm •Mounting: Through Hole for #6 Screw •Mounting Torque: 5.0 in-lbs Maximum •Weight: 6.6 grams (approx) •Marking: Type Number Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Characteristic Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Average Forward Rectified Output Current @ TC= 100℃ GBJ GBJ GBJ GBJ GBJ GBJ GBJ 20005 2001 2002 2004 2006 2008 2010 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 Unit V V IO 20 A IFSM 240 A VFM 1.05 V Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF =10A Peak Reverse Current @TC = 25℃ at Rated DC Blocking Voltage @ TC = 125℃ 10 IR 500 μA I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 240 Typical Junction Capacitance per Element (Note 2) Cj 60 pF R_JC 0.8 ℃/W Tj, TSTG -65 to +150 ℃ Typical Thermal Resistance, Junction to Case (Note 3) Operating and Storage Temperature Range A2s Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink. http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS GBJ20005 THRU GBJ2010 20 With heatsink 15 10 Without heatsink 5 Resistive or Inductive load 0 25 50 75 100 125 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 25 150 10 1.0 0.1 Tj = 25°C Pulse width = 300µs 0.01 100 Tj = 25°C Single half-sine-wave (JEDEC method) 200 150 100 50 0 1 1.6 2.0 Tj = 25°C f = 1MHz 1 1 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 1.2 10 100 10 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 250 0.4 0 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 1000 100 Tj = 125°C Tj = 100°C 10 Tj = 50°C 1.0 Tj = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) http://www.yeashin.com 2 REV.02 20120305