Seme LAB BDS15 Silicon pnp epitaxial base in to220 metal and smd1 ceramic surface mount package Datasheet

BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
SEME
LAB
MECHANICAL DATA
Dimensions in mm
SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
4.6
1 0.6
1 0 .6
3.6
Dia.
1 3 .5
16.5
0.8
1 23
1 3 .7 0
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
1.0
2 .5 4
BSC
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
Pin 1 – Base
3 .6 0 (0 .1 4 2 )
M a x .
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
2
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
9 .6
9 .3
1 1 .5
1 1 .2
TO220M
SMD1
• SCREENING TO CECC LEVELS
3
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
0 .7 6
(0 .0 3 0 )
m in .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
• MILITARY AND SPACE OPTIONS
2. 70
BSC
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
- TO220 Metal Package - Isolated
- Ceramic Surface Mount Package
Pin 2 – Collector
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDS13
VCBO
VCEO
VEBO
IE , IC
IB
Ptot
Tstg
Tj
Semelab plc.
Collector - Base voltage (IE = 0)
Collector - Emitter voltage (IB = 0)
Emitter - Base voltage (IC = 0)
Emitter , Collector current
Base current
Total power dissipation at Tcase £ 75°C
Storage Temperature
Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
BDS14
BDS15
–60V
–80V
–100V
–60V
–80V
–100V
–5V
–15A
–5A
90W
–65 TO 200°C
200°C
PRELIM. 7/00
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
SEME
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Collector cut-off current
(IE = 0)
ICBO
Collector cut-off current
(IB = 0)
ICEO
VCB = –60V
VCB = –80V
VCB = –100V
VCE = –30V
VCE = –40V
VCE = –50V
BDS13
BDS14
BDS15
BDS13
BDS14
BDS15
IEBO
Emitter cut-off current
(IC = 0)
VCEO(sus)*
Collector - Emitter
BDS14
sustaining voltage (IB = 0)
VBE(sat)*
VBE*
hFE*
DC Current gain
fT
Transition frequency
Max.
–500
–500
–500
–1
–1
–1
IC = –100mA
Unit
mA
mA
mA
–1
BDS15
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
Typ.
VEB = –5V
BDS13
VCE(sat)*
Min.
–60
–80
–100
V
IC = –5A
IC = –10A
IB = –0.5A
IB = –2.5A
–1
–3
V
IC = –10A
IB = –2.5A
–2.5
V
IC = –5A
IC = –0.5A
IC = –5A
IC = –10A
IC = –0.5A
VCE = –4V
VCE = –4V
VCE = –4V
VCE = –4V
VCE = –4V
–1.5
250
150
V
40
15
5
3
MHz
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
SWITCHING CHARACTERISTICS
Parameter
ton
ts
tr
On Time
Storage Time
Fall Time
(td + tr)
Test Conditions
Max.
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = –IB2 = 0.4A
0.7
1.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
Max. 1.4°C/W
RTHcase-sink
Thermal resistance case - heatsink **
Typ. 1.0°C/W
RTHj-a
Thermal resistance junction - ambient
Max. 80°C/W
** Smooth flat surface using thermal grease.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
PRELIM. 7/00
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