TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 50 mAdc PT 360 mW TJ, Tstg -65 to +200 °C Symbol Value Unit RθJA 325 275 350 °C/W Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range TO-18 (TO-206AA) 2N2484 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2484 2N2484UA 2N2484UB, UBC 1. See 19500/376 for Thermal Performance Curves. 2N2484UA ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Emitter Cutoff Current VCE = 45Vdc Collector-Base Cutoff Current VCB = 45Vdc VCB = 60Vdc Collector-Emitter Cutoff Current VCE = 5.0Vdc T4-LDS-0058 Rev. 1 (080853) Vdc ICES 5.0 ηAdc ICBO 5.0 10 ηAdc μAdc ICEO 2.0 ηAdc 2N2484UB, UBC (UBC = Ceramic Lid Version) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit 2.0 10 ηAdc μAdc OFF CHARACTERISTICS Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc IEBO ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 1.0μAdc, VCE = 5.0Vdc IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 500μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc hFE Collector-Emitter Saturation Voltage IC = 1.0mAdc, IB = 100μAdc VCE(sat) Base-Emitter Voltage VCE = 5.0Vdc, IC = 100μAdc VBE(ON) 45 200 225 250 250 225 500 675 800 800 800 0.3 Vdc 0.5 0.7 Vdc Symbol Min. Max. Unit |hfe| 3.0 2.0 0.7 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward Current Transfer Ratio IC = 50μAdc, VCE = 5.0Vdc, f = 5.0MHz IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz Open Circuit Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hoe 40 Open Circuit Reverse-Voltage Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hre 8.0 x 10-4 Input Impedance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hje 3.5 24 Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hfe 250 900 μmhos kΩ Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 5.0 pF Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 6.0 pF (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. T4-LDS-0058 Rev. 1 (080853) Page 2 of 2