Microsemi JAN2N2484 Npn silicon low power transistor Datasheet

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
DEVICES
LEVELS
2N2484UA
2N2484UB
2N2484UBC *
JAN
JANTX
JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
50
mAdc
PT
360
mW
TJ, Tstg
-65 to +200
°C
Symbol
Value
Unit
RθJA
325
275
350
°C/W
Collector Current
Total Power Dissipation @ TA = +25°C
(1)
Operating & Storage Junction Temperature Range
TO-18 (TO-206AA)
2N2484
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Ambient-to-Case
2N2484
2N2484UA
2N2484UB, UBC
1. See 19500/376 for Thermal Performance Curves.
2N2484UA
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
V(BR)CEO
60
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Emitter Cutoff Current
VCE = 45Vdc
Collector-Base Cutoff Current
VCB = 45Vdc
VCB = 60Vdc
Collector-Emitter Cutoff Current
VCE = 5.0Vdc
T4-LDS-0058 Rev. 1 (080853)
Vdc
ICES
5.0
ηAdc
ICBO
5.0
10
ηAdc
μAdc
ICEO
2.0
ηAdc
2N2484UB, UBC
(UBC = Ceramic Lid Version)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
2.0
10
ηAdc
μAdc
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 6.0Vdc
IEBO
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.0μAdc, VCE = 5.0Vdc
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 500μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
hFE
Collector-Emitter Saturation Voltage
IC = 1.0mAdc, IB = 100μAdc
VCE(sat)
Base-Emitter Voltage
VCE = 5.0Vdc, IC = 100μAdc
VBE(ON)
45
200
225
250
250
225
500
675
800
800
800
0.3
Vdc
0.5
0.7
Vdc
Symbol
Min.
Max.
Unit
|hfe|
3.0
2.0
0.7
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio
IC = 50μAdc, VCE = 5.0Vdc, f = 5.0MHz
IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz
Open Circuit Output Admittance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
hoe
40
Open Circuit Reverse-Voltage Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
hre
8.0 x 10-4
Input Impedance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
hje
3.5
24
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
hfe
250
900
μmhos
kΩ
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
5.0
pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
6.0
pF
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
T4-LDS-0058 Rev. 1 (080853)
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