JbEmi-Concluctoi ZPioducti, Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MCR63-( )A
Series
MCR64 Series
MCR65 Series
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
... designed for industrial and consumer applications such as power supplies;
battery chargers; temperature, motor, light, and welder controls.
•
•
•
•
Economical for a Wide Range of Uses
High Surge Current — IjSM = 550 Amps
Rugged Construction in Either Pressfit, Stud, or Isolated Stud
Glass Passivated Junctions for Maximum Reliability
sens
55 AMPERES RMS
50 thru 800 VOLTS
MAXIMUM RATINGS (Tj -- 25°C unless otherwise noted.)
Symbol
feting
Peak Repetitive Forward and Reverse Blocking
Note 1 (Tj = 25 to 125°C, Gate Open)
MCR63-I )A
MCR64MCR65-
Voltage,
2
3
4
6
VDRM
or
VRRM
Peak Surge Current
(One Cycle, 60 Hz, Tj = -40 to + 125°C)
Circuit Fusing Considerations
(t • 8.3 ms)
Peak Gate Power
Average Gate Power {Pulse Width s 2 jis)
Peak Forward Gate Current
Peak Gala Voltage — Forward
Reverse
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque
50
100
200
CASE 283-04
STYLE!
MCR64 Series
Volts
VRSM
75
150
300
500
700
900
8
10
Forward Current RMS
Unit
Volts
400
600
800
8
10
Non-Repetitive Peak Reverse Blocking Voltage
(t s 5 ms). Note 1
2
MCR63-I (A
3
MCR644
MCR656
Value
'TIRMS)
55
Amps
ITSM
550
Amps
ft
1255
CASE 174-04
STYLE 1
MCR63-I )A Series
A2s
PGFM
20
Watts
PQF(AV)
0.5
Watt
!GFM
VGFM
VGRM
TJ
2
Amps
10
10
Volts
-40 to +125
•c
Tstg
-40 to +150
°C
30
in, Ib.
CASE 311-02
STYLE 1
MCR65 S.riei
Note 1. VDRM and VRRM tor all types can be applied on a continuous basis. Ratings apply For zero or
negative gats voltage; however, positive gate voltage shell not be applied concurrent with negative
potential on the anode Blocking voltage* shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
\,l Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
S«am 1-CnnAt i*-tnr«
MCR63-I )A Seriw • MCR64 SWIM • MCR66 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Pressfit and Stud
Isolated Stud
RflJC
Max
Unit
°ow
1
1.1
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.I
Chanctarltik!
Mln
Mex
Unit
-
10
2
HA
mA
VTM
—
2
Volts
"GT
_
Symbol
Peak Forward or Reverse Blocking Current
(VAK - Rated VDRM or VRRM, Gate Openl
'DRM. IRRM
Tj = 26°C
Tj - 125°C
Forward "On" Voltage
HTM = 176 A Peak)
Gate Trigger Current (Continuous del
(VD - 12 v, RL = BO n)
TC = 25*0
mA
40
75
TC - -40°C
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 50
ft)
VGT
TC = 25-C
TC = -40-C
Volts
3
3.5
0.2
(VD = Rated VDRM, RL - 1 MX Tj - 125-Q
Holding Current
(VD = 12 V, RL - 50 n, Gate Open)
Forward Voltage Application Rate
(Tj - 125°C, VD = Rated VDRM)
"^
5
S £• 5 S g
T C MAXIMUM CASE TEMPERATURE i°ci
ij:
0
\ s •w
\
s
s "^ ^
*v
s.
\0
,'
co°
(
V, •>^
J0»
**^
—
60
mA
dv/dl
SO
—
V/|iS
FIGURE 2 - POWER DISSIPATION
FIGURE 1 - AVERAGE CURRENT DERATING
>B>
>
•^ 5^.
IH
^
*N
dc
\w
t,MCBiS»
n iddittorul (ft
1
10
20
30
40
SO
'|(AV> AVERAGE ON STATE CURRENT 1AMPS)
10
Ml
3D
«
'TIAVI- AVMAGE ON STATE CUIMEIlT (AMfSI
iO