NEC NE662M16-T3 Npn silicon high frequency transistor Datasheet

NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE662M16
FEATURES
•
HIGH GAIN BANDWIDTH: fT = 25 GHz
•
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
•
HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
•
NEW LOW PROFILE M16 PACKAGE:
• Flat Lead Style with a height of just 0.50mm
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
M16
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
DC
SYMBOLS
UNITS
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
fT
MSG
|S21E|2
RF
PARAMETERS AND CONDITIONS
NE662M16
2SC5704
M16
NF
P1dB
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
GHz
MIN
TYP
200
200
50
70
20
25
dB
dB
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
dB
1.1
dBm
11
pF
0.14
IP3
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
Cre
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
100
20
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Output Power at 1 dB compression point at
VCE = 2 V, IC = 20 mA, f = 2 GHz
MAX
14
17
1.5
22
0.24
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S21
S12
NE662M16
VCBO
Collector to Base Voltage
V
15
VCEO
Collector to Emitter Voltage
V
3.3
VEBO
Emitter to Base Voltage
V
1.5
Collector Current
mA
35
PT
Total Power Dissipation
mW
115
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
PACKAGE OUTLINE M16
1.0±0.05
0.8+0.07
-0.05
PART NUMBER
NE662M16-T3
QUANTITY
10 kpcs/reel
PACKAGING
Pin 1 (Collector), Pin 6 (Emitter)
face the perforation side on the
tape.
2
0.4
0.8
3
0.4
0.5±0.05
ORDERING INFORMATION
zC
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
1.2+0.07
-0.05
1
IC
OUTLINE DIMENSIONS (Units in mm)
0.15±0.05
RATINGS
0.125+0.1
-0.05
UNITS
6
PARAMETERS
5
SYMBOLS
4
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
PIN CONNECTIONS
1. Collector
4. Base
2. Emitter
5. Emitter
3. Emitter
6. Emitter
NE662M16
TYPICAL PERFORMANCE CURVES (TA = 25°C)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation, Ptot (mW)
300
Mounted on Glass Epoxy Board
(1.08 cm2 × 1.0 mm (t) )
250
200
150
115
100
50
25
0
50
75
100
125
Reverse Transfer Capacitance, Cre (pF)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.20
f = 1 MHz
0.16
0.12
0.08
0.04
0
150
2
4
6
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
VCE = 2 V
Collector Current, Ic (mA)
25
20
15
10
5
0
500 µA
35
30
Collector Current, Ic (mA)
10
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
0.2
0.4
0.6
0.8
1.0
450 µA
30
400 µA
25
350 µA
300 µA
20
250 µA
15
200 µA
10
150 µA
5
100 µA
0
IB = 50 µA
4
3
1
2
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
1 000
30
VCE = 2 V
VCE = 2 V
f = 2 GHz
Gain Bandwdth, fT (GHz)
DC Current Gain, hFE
8
Collector to Base Voltage, VCB (V)
100
25
20
15
10
5
10
0.1
1
10
Collector Current, lC (mA)
100
0
1
10
Collector Current, IC (mA)
100
NE662M16
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN
vs. FREQUENCY
INSERTION POWER GAIN
vs. FREQUENCY
35
VCE = 1 V
IC = 20 mA
30
Insertion Power Gain, IS21eI2
25
20
15
10
5
0
0.1
30
25
20
15
10
5
0
0.1
10
1
VCE = 2 V
IC = 20 mA
1
Frequency, f (GHz)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
30
MSG
25
|S21e|2
20
15
10
5
0
1
10
VCE = 2 V
f = 2 GHz
25
MSG
|S21e|2
15
10
5
0
1
100
30
IC
-10
-25
-15
20
5
Input Power, Pin (dBm)
10
5
Output Power, Pout (dBm)
Pout
0
30
Collector Current, Ic (mA)
Output Power, Pout (dBm)
40
10
100
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
50
20
10
Collector Current, IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
VCE = 2 V, f = 1 GHz
Icq = 20 mA (RF OFF)
MAG
20
Collector Current, IC (mA)
30
10
Frequency, f (GHz)
50
VCE = 2 V, f = 2 GHz
Icq = 20 mA (RF OFF)
20
40
Pout
10
IC
0
-10
-25
30
-15
5
Input Power, Pin (dBm)
20
10
5
Collector Current, Ic (mA)
Insertion Power Gain, IS21eI2
35
NE662M16
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
30
VCE = 2 V
f = 1 GHz
5
25
Ga
4
20
3
15
2
10
NF
Noise Figure, NF (dB)
Noise Figure, NF (dB)
5
20
3
15
2
10
NF
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
6
20
3
15
2
10
NF
5
1
0
1
Ga
4
20
3
15
2
10
NF
5
1
0
100
10
25
5
Noise Figure, NF (dB)
Ga
4
30
VCE = 2 V
f = 1.5 GHz
25
5
Noise Figure, NF (dB)
0
100
10
VCE = 1 V
f = 1.5 GHz
0
1
0
100
10
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
30
VCE = 2 V
f = 2 GHz
25
20
4
Ga
3
15
2
10
NF
5
1
10
Collector Current, IC (mA)
0
100
25
5
Noise Figure, NF (dB)
5
30
6
VCE = 1 V
f = 2 GHz
Noise Figure, NF (dB)
5
Collector Current, IC (mA)
6
0
1
25
4
0
1
0
100
10
Ga
1
5
1
0
1
30
6
VCE = 1 V
f = 1 GHz
4
Ga
20
3
15
2
10
NF
1
0
1
10
Collector Current, IC (mA)
5
0
100
NE662M16
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
j100
j25
+45º
+135º
j10
0
25
10
50
5
100
+180º
S21
10
+0º
S21
S22
-j10
-45º
-135º
-j25
-j100
-90º
-j50
NE662M16
VC = 2 V, IC = 5 mA
FREQUENCY
S11
GHz
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.100
3.200
3.300
3.400
3.500
3.600
3.700
3.800
3.900
4.000
0.79
0.79
0.78
0.76
0.74
0.73
0.71
0.69
0.68
0.66
0.65
0.64
0.64
0.63
0.62
0.61
0.60
0.60
0.59
0.58
0.58
0.57
0.57
0.56
0.56
0.55
0.55
0.54
0.54
0.53
0.52
0.52
0.52
0.52
0.51
0.51
0.51
0.51
0.51
0.51
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
MAG
ANG
-8.34
-20.52
-30.77
-39.87
-48.66
-56.79
-64.12
-71.30
-77.50
-83.36
-88.67
-93.70
-98.23
-102.48
-106.53
-110.24
-113.97
-117.60
-120.80
-124.09
-127.67
-130.76
-133.98
-136.85
-139.86
-142.72
-145.66
-148.25
-151.04
-153.76
-156.67
-159.41
-162.03
-164.80
-167.55
-170.15
-172.65
-174.91
-177.27
-179.59
13.52
13.20
12.77
12.28
11.75
11.15
10.59
10.02
9.48
8.98
8.55
8.15
7.79
7.45
7.14
6.82
6.57
6.36
6.11
5.86
5.69
5.51
5.37
5.16
5.03
4.88
4.75
4.58
4.46
4.35
4.21
4.09
4.00
3.89
3.78
3.68
3.61
3.51
3.40
3.31
171.32
165.06
158.29
152.12
146.29
140.96
136.12
131.99
128.20
124.77
121.61
118.55
115.75
113.15
110.70
108.22
105.79
103.81
102.01
99.85
97.73
95.62
94.20
92.25
90.06
88.26
86.62
84.94
82.99
81.42
79.85
78.16
76.53
75.17
73.64
71.91
70.42
69.29
67.93
66.28
0.01
0.02
0.02
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
84.69
78.92
73.38
68.92
64.34
60.23
56.71
53.36
50.48
47.89
45.67
43.73
42.02
40.50
39.06
37.77
36.69
35.72
34.87
34.09
33.33
32.59
32.26
31.81
31.21
30.84
30.55
30.18
30.00
29.61
29.45
29.21
28.97
28.78
28.67
28.50
28.28
28.15
28.08
27.96
0.98
0.96
0.93
0.90
0.87
0.83
0.79
0.76
0.72
0.69
0.66
0.64
0.61
0.59
0.57
0.55
0.53
0.51
0.50
0.48
0.47
0.46
0.44
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.36
0.35
0.34
0.33
0.32
0.32
0.31
0.30
0.29
-5.81
-11.66
-16.99
-21.91
-26.38
-30.37
-33.94
-37.10
-39.91
-42.40
-44.60
-46.56
-48.38
-49.89
-51.38
-52.58
-53.71
-54.81
-55.74
-56.51
-57.44
-57.89
-58.61
-59.18
-59.83
-60.32
-60.89
-61.28
-61.71
-62.28
-62.64
-63.08
-63.54
-64.05
-64.59
-65.11
-65.78
-66.41
-67.07
-67.74
K
MAG1
0.13
0.09
0.11
0.14
0.17
0.20
0.24
0.26
0.29
0.32
0.35
0.38
0.40
0.43
0.46
0.49
0.52
0.55
0.58
0.61
0.64
0.66
0.68
0.71
0.74
0.77
0.80
0.83
0.87
0.90
0.93
0.96
0.99
1.02
1.05
1.07
1.09
1.12
1.16
1.19
32.18
29.17
27.36
26.09
25.11
24.28
23.60
22.99
22.47
21.99
21.59
21.22
20.88
20.57
20.28
19.99
19.74
19.54
19.31
19.06
18.89
18.68
18.53
18.31
18.17
17.98
17.83
17.63
17.50
17.34
17.17
17.02
16.88
15.94
15.28
14.77
14.44
14.02
13.59
13.22
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE662M16
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
j100
j25
+45º
+135º
j10
0
25
10
S11
50
100
5 10 15 20
+180º
+0º
S21
S22
-j10
-45º
-135º
-j100
-j25
-j50
-90º
NE662M16
VC = 2 V, IC = 10 mA
FREQUENCY
S11
GHz
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.100
3.200
3.300
3.400
3.500
3.600
3.700
3.800
3.900
4.000
0.66
0.66
0.65
0.63
0.61
0.60
0.58
0.57
0.56
0.55
0.55
0.54
0.54
0.53
0.53
0.52
0.52
0.52
0.51
0.51
0.51
0.50
0.50
0.50
0.50
0.49
0.49
0.49
0.48
0.48
0.47
0.47
0.47
0.47
0.47
0.47
0.47
0.47
0.47
0.47
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
MAG
ANG
-12.81
-28.48
-41.93
-53.87
-64.70
-74.41
-82.86
-90.61
-97.18
-103.22
-108.53
-113.37
-117.69
-121.63
-125.35
-128.85
-132.25
-135.50
-138.46
-141.58
-144.72
-147.54
-150.41
-153.04
-155.65
-158.30
-160.91
-163.29
-165.82
-168.40
-171.02
-173.52
-175.90
-178.39
179.16
176.86
174.73
172.77
170.80
168.82
21.08
20.34
19.32
18.18
16.97
15.75
14.65
13.62
12.70
11.88
11.17
10.51
9.95
9.43
8.96
8.50
8.13
7.82
7.48
7.14
6.89
6.66
6.44
6.17
5.98
5.80
5.61
5.40
5.24
5.09
4.93
4.78
4.66
4.53
4.39
4.27
4.18
4.06
3.93
3.83
170.08
161.46
153.18
145.93
139.38
133.63
128.64
124.38
120.59
117.23
114.18
111.31
108.65
106.24
103.96
101.70
99.47
97.63
96.05
94.06
92.12
90.21
88.94
87.15
85.19
83.57
82.16
80.62
78.93
77.50
76.12
74.60
73.12
71.93
70.55
69.00
67.66
66.70
65.49
63.99
0.01
0.01
0.02
0.03
0.03
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
81.45
76.90
70.56
65.20
60.63
56.67
53.54
50.71
48.39
46.60
45.17
43.92
42.92
42.14
41.39
40.83
40.51
40.23
39.88
39.77
39.58
39.38
39.49
39.53
39.40
39.29
39.33
39.31
39.52
39.41
39.56
39.47
39.46
39.49
39.50
39.45
39.36
39.24
39.22
39.15
0.96
0.94
0.90
0.85
0.80
0.75
0.70
0.66
0.62
0.58
0.55
0.52
0.50
0.47
0.45
0.43
0.42
0.40
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.27
0.26
0.25
0.24
0.24
0.23
0.22
0.22
0.21
0.20
-7.79
-15.60
-22.67
-28.92
-34.46
-39.19
-43.27
-46.77
-49.77
-52.36
-54.59
-56.54
-58.27
-59.73
-61.06
-62.21
-63.19
-64.16
-64.99
-65.63
-66.43
-66.83
-67.39
-67.86
-68.39
-68.81
-69.31
-69.61
-70.04
-70.48
-70.87
-71.30
-71.76
-72.30
-72.89
-73.50
-74.30
-75.12
-75.94
-76.91
K
MAG1
0.19
0.13
0.16
0.20
0.24
0.28
0.33
0.37
0.41
0.45
0.49
0.52
0.56
0.59
0.63
0.66
0.70
0.73
0.76
0.80
0.82
0.84
0.87
0.90
0.93
0.95
0.98
1.01
1.04
1.06
1.09
1.11
1.13
1.15
1.17
1.19
1.21
1.23
1.25
1.27
34.48
31.43
29.60
28.32
27.29
26.47
25.76
25.14
24.59
24.11
23.68
23.28
22.91
22.57
22.24
21.92
21.65
21.39
21.12
20.83
20.62
20.38
20.17
19.91
19.72
19.50
19.29
18.53
17.69
17.14
16.67
16.22
15.88
15.52
15.17
14.85
14.60
14.28
13.93
13.64
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE662M16
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90º
j100
j25
+45º
+135º
j10
0
25
10
50
100
5 10 15 20 25
+180º S11
S11
+0º
S22
-j10
-45º
-135º
-j25
-j100
-j50
-90º
NE662M16
VC = 2 V, IC = 20 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.100
3.200
3.300
3.400
3.500
3.600
3.700
3.800
3.900
4.000
S21
S11
MAG
0.51
0.51
0.51
0.51
0.50
0.50
0.49
0.49
0.49
0.49
0.48
0.48
0.48
0.48
0.48
0.48
0.48
0.47
0.47
0.47
0.47
0.47
0.47
0.47
0.47
0.46
0.46
0.46
0.46
0.45
0.45
0.45
0.45
0.45
0.45
0.46
0.46
0.46
0.46
0.46
ANG
-19.24
-39.58
-56.67
-71.47
-83.85
-94.44
-103.20
-110.77
-117.07
-122.58
-127.34
-131.56
-135.30
-138.62
-141.83
-144.87
-147.80
-150.55
-153.08
-155.81
-158.52
-161.02
-163.41
-165.69
-167.97
-170.37
-172.58
-174.73
-177.01
-179.36
178.28
176.08
173.87
171.68
169.53
167.47
165.67
163.96
162.28
160.56
MAG
28.64
27.18
25.27
23.19
21.13
19.22
17.57
16.11
14.85
13.76
12.83
11.98
11.27
10.62
10.04
9.49
9.04
8.66
8.25
7.86
7.56
7.29
7.03
6.72
6.50
6.29
6.07
5.84
5.65
5.49
5.31
5.14
5.00
4.86
4.71
4.58
4.47
4.34
4.21
4.09
S12
ANG
168.38
157.71
148.17
140.08
133.18
127.33
122.40
118.27
114.65
111.47
108.63
105.97
103.49
101.28
99.19
97.12
95.06
93.37
91.95
90.10
88.29
86.54
85.38
83.75
81.93
80.42
79.19
77.76
76.22
74.88
73.63
72.22
70.83
69.75
68.47
67.03
65.80
64.93
63.80
62.37
MAG
0.01
0.01
0.02
0.02
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
S22
ANG
MAG
79.10
74.03
67.79
62.44
58.17
54.93
52.50
50.56
49.13
48.10
47.35
46.96
46.65
46.44
46.48
46.28
46.44
46.55
46.81
46.88
46.96
47.15
47.44
47.56
47.55
47.65
47.79
47.81
47.96
47.89
48.00
47.97
47.81
47.81
47.78
47.68
47.46
47.30
47.24
46.96
0.94
0.90
0.85
0.79
0.72
0.66
0.61
0.56
0.52
0.49
0.46
0.43
0.41
0.39
0.37
0.35
0.33
0.32
0.31
0.29
0.28
0.27
0.26
0.26
0.25
0.24
0.23
0.22
0.21
0.21
0.20
0.19
0.19
0.18
0.18
0.17
0.16
0.16
0.15
0.15
K
ANG
-9.68
-19.55
-28.23
-35.68
-41.91
-47.08
-51.40
-55.03
-58.07
-60.66
-62.85
-64.73
-66.43
-67.82
-69.05
-70.13
-71.09
-71.97
-72.73
-73.33
-74.04
-74.48
-74.96
-75.41
-75.93
-76.35
-76.85
-77.18
-77.67
-78.08
-78.62
-79.11
-79.69
-80.42
-81.20
-82.06
-83.19
-84.30
-85.66
-87.01
MAG1
(dB)
0.26
0.20
0.23
0.28
0.33
0.39
0.44
0.49
0.54
0.59
0.64
0.68
0.72
0.75
0.79
0.83
0.86
0.89
0.92
0.95
0.97
0.99
1.01
1.04
1.06
1.07
1.09
1.12
1.14
1.16
1.17
1.19
1.20
1.22
1.23
1.24
1.25
1.27
1.29
1.30
36.13
33.13
31.27
29.98
28.93
28.06
27.33
26.69
26.11
25.60
25.12
24.67
24.27
23.88
23.50
23.14
22.81
22.51
22.19
21.87
21.60
21.33
20.46
19.60
19.05
18.61
18.15
17.64
17.23
16.88
16.51
16.16
15.87
15.56
15.26
14.97
14.74
14.44
14.12
13.86
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
3-46
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE662M16
NE662M16 NONLINEAR MODEL
SCHEMATIC
CCB
LCX
LBX
Collector
LB
Base
CCE
LE
CBEPKG
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
IS
1.6e-16
MJC
0.3
BF
105
XCJC
0.1
NF
1.02
CJS
0
0.75
VAF
23
VJS
IKF
0.38
MJS
0
ISE
1e-6
FC
0.6
NE
30
TF
2e-12
CCB
0.07e-12
BR
12
XTF
0.2
CCE
0.09e-12
NR
1.02
VTF
0.2
LB
0.4e-9
VAR
2.5
ITF
0.03
LE
0.14e-9
IKR
0.1
PTF
0
CCEPKG
0.12e-12
ISC
3e-15
TR
1e-11
CBEPK
0.1e-12
NC
1.28
EG
1.11
LBX
0.1e-9
RE
1.1
XTB
0
LCX
0.6e-9
RB
6
XTI
3
LEX
0.04e-9
RBM
3.5
KF
0
IRB
1.3e-3
AF
1
RC
8.75
CJE
0.4e-12
VJE
0.6
MJE
0.5
CJC
0.1e-12
VJC
0.75
ADDITIONAL PARAMETERS
Parameters
NE662M16
MODEL RANGE
Frequency: 0.1 to 4 GHz
Bias:
VCE = 0.5 V to 3 V, IC = 1 mA to 30 mA
Date:
01/15/2002
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
01/22/2002