DMC1017UPD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI®5060-8 Product Summary Device Features and Benefits • Thermally Efficient Package-Cooler Running Applications 9.5A • • High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses 25mΩ @ VGS = 2.5V 7.8A • Low Input Capacitance 32mΩ @ VGS = -4.5V -6.9A • Fast Switching Speed 53mΩ @ VGS = -2.5V -5.4A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) RDS(ON) ID TA = +25°C 17mΩ @ VGS = 4.5V V(BR)DSS Q1 12V Q2 -12V Description and Applications • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch. Mechanical Data • • • • • • Notebook Battery Power Management DC-DC Converters Loadswitch • • Case: POWERDI5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.097 grams (approximate) D1 G1 D2 G2 S1 Top View Pin1 Bottom View Q1 N-Channel MOSFET S2 S1 D1 G1 D1 S2 D2 G2 D2 Q2 P-Channel MOSFET Top View Pin Configuration Ordering Information (Note 4) Part Number DMC1017UPD-13 Notes: Case POWERDI5060-8 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D1 D1 D2 D2 = Manufacturer’s Marking C1017UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) C1017UD YY WW S1 G1 S2 G2 POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 1 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Q1 Value 12 Q2 Value -12 Units V VGSS ±8 ±8 V Steady State TA = +25°C TA = +70°C ID 9.5 7.6 -6.9 -5.5 A t<10s TA = +25°C TA = +70°C ID 13.0 10.4 -9.4 -7.5 A Maximum Body Diode Forward Current IS 2 -2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 50 -35 A Avalanche Current (Note 6) L = 0.1mH IAS 9.7 -9.2 A Avalanche Energy (Note 6) L = 0.1mH EAS 4.7 4.3 mJ Thermal Characteristics Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) RθJC 1.5 54 29 4.1 TJ, TSTG -55 to +150 RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 2.3 Units W °C/W °C Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 12 ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ ⎯ 1 µA VDS = 12V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS ⎯ ⎯ ±100 nA VGS = ±8V, VDS = 0V VGS(th) 0.6 ⎯ 9.6 1.5 V ⎯ ⎯ 11 25 Static Drain-Source On-Resistance RDS(ON) 17 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD ⎯ 0.7 1.2 Ciss ⎯ 1787 ⎯ Output Capacitance Coss ⎯ 297 ⎯ Reverse Transfer Capacitance Crss ⎯ 265 ⎯ Gate Resistance RG ⎯ 1.6 ⎯ Total Gate Charge (VGS = 4.5V) Qg ⎯ 18.6 ⎯ Total Gate Charge (VGS = 10V) Qg ⎯ 35.4 ⎯ Gate-Source Charge Qgs ⎯ 2.7 ⎯ mΩ Test Condition VDS = VGS, ID = 250µA VGS = 4.5V, ID = 11.8A VGS = 2.5V, ID = 9.8A V VGS = 0V, IS = 2.9A pF VDS = 6V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 6V, ID = 11.8A nS VDD = 6V, RL = 6Ω VGS = 4.5V, RG = 6Ω, ID = 1A Gate-Drain Charge Qgd ⎯ 3.8 ⎯ Turn-On Delay Time tD(on) ⎯ 6.9 ⎯ Turn-On Rise Time tr ⎯ 10.9 ⎯ tD(off) ⎯ 70.3 ⎯ Turn-Off Fall Time tf trr ⎯ — 31.8 Body Diode Reverse Recovery Time 13.1 ⎯ — nS IF = 11.8A, di/dt = 100A/μs Qrr — 2.2 — nC IF = 11.8A, di/dt = 100A/μs Turn-Off Delay Time Body Diode Reverse Recovery Charge Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 2 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD 20.0 20 VGS = 8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS = 4.0V 15.0 VGS = 3.0V VGS = 2.5V VGS = 1.5V VGS = 2.0V 10.0 VDS = 5.0V 18 VGS = 4.5V 5.0 14 12 10 8 6 TA = 150°C 4 VGS = 1.3V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.015 0.012 VGS = 2.5V 0.009 VGS = 4.5V 0.006 0.003 0 0 2 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 TA = -55°C 0 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.5 0.015 VGS = 4.5V TA = 125°C 0.012 TA = 150°C T A = 85°C 0.009 TA = 25°C TA = -55°C 0.006 0.003 0 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.015 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 25°C 2 VGS = 1.2V T A = 85°C T A = 125°C 2 VGS = 2.5 V ID = 5A 1.5 1 VGS = 4.5V ID = 10A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature VGS = 2 .5V ID = 5A 0.01 VGS = 4.5V ID = 10A 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 3 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD 1.5 20 VGS(th), GATE THRESHOLD VOLTAGE (V) 18 IS, SOURCE CURRENT (A) 16 1 ID = 1mA ID = 250µA 0.5 14 12 10 8 6 4 2 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 TA = 150°C TA = 85°C TA = 125°C TA = 25°C T A = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 Coss Crss 100 10 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 12 6 VDS = 6V ID = 11.8A 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 40 POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 4 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD Electrical Characteristics Q2 P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition -12 ⎯ ⎯ V VGS = 0V, ID = -250µA ⎯ ⎯ -1 µA VDS = -12V, VGS = 0V IGSS ⎯ ⎯ ±100 nA VGS = ±8V, VDS = 0V Gate Threshold Voltage VGS(th) -0.6 ⎯ -1.5 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) ⎯ 21 32 ⎯ 41 53 VSD ⎯ -0.7 -1.2 Input Capacitance Ciss ⎯ 2100 ⎯ Output Capacitance Coss ⎯ 872 ⎯ Reverse Transfer Capacitance Crss ⎯ 626 ⎯ Gate Resistance RG ⎯ 23.1 ⎯ Total Gate Charge (VGS = -4.5V) Qg ⎯ 23.7 ⎯ Total Gate Charge (VGS = -8V) Qg ⎯ 38.8 ⎯ Gate-Source Charge Qgs ⎯ 5.3 ⎯ Gate-Drain Charge Qgd ⎯ 9.8 ⎯ Turn-On Delay Time tD(on) ⎯ 10.6 ⎯ Turn-On Rise Time tr ⎯ 25.5 ⎯ Turn-Off Delay Time tD(off) ⎯ 144 ⎯ Turn-Off Fall Time tf ⎯ 129 ⎯ Body Diode Reverse Recovery Time trr — 48.9 Body Diode Reverse Recovery Charge Qrr — 15.3 ON CHARACTERISTICS (Note 6) Diode Forward Voltage mΩ VGS = -4.5V, ID = -8.9A VGS = -2.5V, ID = -6.9A V VGS = 0V, IS = -2.9A pF VDS = -6V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -6V, ID = -8.9A nS VDD = -6V, RL = 6Ω VGS = -4.5V, RG = 6Ω, ID = -1A — nS IF = -8.9A, di/dt = -100A/μs — nC IF = -8.9A, di/dt = -100A/μs DYNAMIC CHARACTERISTICS (Note 7) Notes: 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C. 7. Short duration pulse test used to minimize self-heating effect. 20.0 20 VGS = -8.0V 16 VGS = -2.5V VGS = -3.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.0V 15.0 VDS = -5.0V 18 VGS = -4.5V VGS = -3.0V 10.0 5.0 14 12 10 8 6 TA = 150°C 4 VGS = -2.0V 0.0 VGS = -1.8V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 11 Typical Output Characteristics TA = 125°C 2 5 0 TA = 85°C TA = 25°C TA = -55° C 0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 12 Typical Transfer Characteristics 4 POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 5 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD 0.03 0.07 0.06 VGS = -2.5V 0.05 0.04 0.03 VGS = -4.5V 0.02 0.01 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 13Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 VGS = -4.5V 0.027 TA = 125°C 0.024 TA = 85°C 0.021 TA = 25°C 0.018 TA = -55°C 0.015 0.012 0.009 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 14 Typical On-Resistance vs. Drain Current and Temperature 20 0.05 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2 VGS = -4.5V ID = -10A 1.5 1 VGS = -2.5V ID = -5A 0.5 0 -50 VGS = -2.5V ID = -5A 0.045 0.04 0.035 0.03 0.025 VGS = -4.5V ID = -10A 0.02 0.015 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 15 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 16 On-Resistance Variation with Temperature 2 20 18 16 1.5 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C -ID = 1mA -ID = 250µA 1 0.5 14 12 10 8 TA= 150°C 6 T A= 125 °C 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 17 Gate Threshold Variation vs. Ambient Temperature 0 TA= 85°C T A= 25 °C TA= -55° C 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 18 Diode Forward Voltage vs. Current POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 6 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD 8 10000 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 Coss Crss 100 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19 Typical Junction Capacitance r(t), TRANSIENT THERMAL RESISTANCE 1 12 6 4 VDS = -6V ID = -8.9A 2 0 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Figure 20 Gate-Charge Characteristics D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 104°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 21 Transient Thermal Resistance 10 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 7 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D 1 D PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm x 4 0 ︵ ︶ E 1 E 1 A c x e n a l P g n i t a e S y e 1 x 4 1 0 0 3 0 . 0 ± 7 0 . 0 h t p e D 0 0 0 . 1 Ø ︵ ︶ A L I A T E D x 8 1 b ︵ ︶ 2 / e x 8 1 b ︵ ︶ x 2 2 b L k 3 D ︵ ︶ A 1 k 4 L A L I A T E D 2 D M 2 D 2 E 1 L a L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. 4 X 8 Dimensions 1 Y C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 2 X 3 X 2 Y 3 Y 1 G 1 X x 4 Y ︵ ︶ 1 Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G C X POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 8 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1017UPD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 0 9 of 9 www.diodes.com April 2014 © Diodes Incorporated