Diodes MMDT3946-7-F Complementary npn / pnp small signal surface mount transistor Datasheet

MMDT3946
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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•
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Complementary Pair
One 3904-Type NPN
One 3906-Type PNP
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
SOT-363
A
C2
B1
E1
B C
E2
B2
C1
H
Mechanical Data
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•
•
•
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K
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: K46 - See Page 5
Ordering & Date Code Information: See Page 5
Weight: 0.006 grams (approximate)
Maximum Ratings, NPN 3904 Section
Characteristic
M
J
D
C2
B1
F
L
E1
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
—
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
E2
B2
C1
E1, B1, C1 = PNP3906 Section
E2, B2, C2 = NPN3904 Section
@TA = 25°C unless otherwise specified
Symbol
NPN 3904 Section
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Maximum Ratings, PNP 3906 Section
Characteristic
@TA = 25°C unless otherwise specified
Symbol
PNP 3906 Section
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Emitter-Base Voltage
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum combined dissipation.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30123 Rev. 10 - 2
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MMDT3946
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Electrical Characteristics, NPN 3904 Section
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
V
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
6.0
V
IE = 10μA, IC = 0
ICEX
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
IBL
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
⎯
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
⎯
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kΩ
Voltage Feedback Ratio
hre
0.5
8.0
x 10
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
1.0
40
μS
Current Gain-Bandwidth Product
fT
300
⎯
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
⎯
5.0
dB
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
Delay Time
td
⎯
35
ns
Rise Time
tr
⎯
35
ns
Storage Time
ts
⎯
200
ns
Fall Time
tf
⎯
50
ns
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 6)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
-4
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Notes:
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
6. Short duration pulse test used to minimize self-heating effect.
DS30123 Rev. 10 - 2
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Electrical Characteristics, PNP 3906 Section
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -10μA, IC = 0
ICEX
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
IBL
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
⎯
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
⎯
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kΩ
Voltage Feedback Ratio
hre
0.1
10
x 10
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
3.0
60
μS
Current Gain-Bandwidth Product
fT
250
⎯
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 6)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
-4
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
td
⎯
35
ns
Rise Time
tr
⎯
35
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
75
ns
Delay Time
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
15
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
10
5
50
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature (Total Device)
DS30123 Rev. 10 - 2
0
0.1
200
3 of 5
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1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage (NPN-3904)
MMDT3946
© Diodes Incorporated
1
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
1,000
100
10
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs.
Collector Current (NPN-3904)
0.01
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
1,000
100
CIBO , INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
10
1
0.1
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
100
10
DS30123 Rev. 10 - 2
10
100
1
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 6, Input and Output Capacitance vs.
Collector-Base Voltage (PNP-3906)
10
1,000
1
0.1
10
1
0.1
hFE, DC CURRENT GAIN
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7, Typical DC Current Gain vs.
Collector Current (PNP-3906)
1
0.1
0.01
1,000
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1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 8, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
MMDT3946
© Diodes Incorporated
1.0
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
IC
IB = 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter
Saturation Voltage vs. Collector Current (PNP-3906)
Ordering Information
Notes:
7.
(Note 7)
Device
Packaging
Shipping
MMDT3946-7-F
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
YM
K46
K46 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2003
P
2004
R
May
5
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30123 Rev. 10 - 2
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MMDT3946
© Diodes Incorporated
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