NSR1030MW2T1G Product Preview Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in charging applications or as part of discrete buck converter or discrete boost converter. As part of a buck conversion circuit, a boost conversion circuit or a charging circuit the low Vf drop of the schottky improves the efficiency of the overall device by consuming less power in the forward mode. http://onsemi.com HIGH CURRENT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage − 0.24 V (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: Class 3B 1 CATHODE 2 ANODE − Machine Model: C • These are Pb−Free Devices Reverse Voltage Peak Revese Voltage Symbol Value Unit VR 30 Vdc VRM 30 V 200 2.0 mW mW/°C Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Forward Current (DC) Continuous IF Forward Current t = 8.3 ms Half Sinewave IF Junction Temperature TJ 125 Max Tstg −55 to +150 Storage Temperature Range RF MG G SOD−323 CASE 477 STYLE 1 RF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) A 1 A ORDERING INFORMATION 5 °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Device Package Shipping† NSR1030MW2T1G SOD−323 3000/Tape & Reel (Pb−Free) NSR1030MW2T3G SOD−323 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. P1 Publication Order Number: NSR1030MW2/D M 1 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating MARKING DIAGRAM 2 NSR1030MW2T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Total Capacitance (VR = 5.0 V, f = 1.0 MHz) CT − − 25 pF Reverse Leakage (VR = 10 V) IR − − 30 mAdc Forward Voltage (IF = 1 mAdc) VF − − 0.250 Vdc Forward Voltage (IF = 10 mAdc) VF − − 0.310 Vdc Forward Voltage (IF = 100 mAdc) VF − − 0.395 Vdc Forward Voltage (IF = 500 mAdc) VF − − 0.495 Vdc Forward Voltage (IF = 1000 mAdc) VF − − 0.595 Vdc 100000 IR, REVERSE CURRENT (mA) 150°C 10000 0.1 125°C 85°C 0.01 0.001 0.0 −45°C 25°C 0.1 0.2 0.3 0.4 0.5 125°C 1000 85°C 100 10 25°C −55°C 1 0.6 0 5 10 15 20 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 100 90 CT, CAPACITANCE (pF) IF, FORWARD CURRENT (A) 1 80 70 60 50 40 30 20 10 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 2 25 30 25 30 NSR1030MW2T1G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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