Freescale Semiconductor Advance Information Document Number: MC33661 Rev. 6.0, 11/2006 Local Area Network (LIN) Enhanced Physical Interface with Selectable Slew Rate 33661 Local Interconnect Network (LIN) is a serial communication protocol designed to support automotive networks in conjunction with Controller Area Network (CAN). As the lowest level of a hierarchical network, LIN enables cost-effective communication with sensors and actuators when all the features of CAN are not required. The 33661 is a Physical Layer component dedicated to automotive LIN sub-bus applications. It offers slew rate selection for optimized operation at 10 kbps and 20 kbps, fast baud rate (above 100 kbps) for test and programming modes, excellent radiated emission performance, and safe behavior in the event of LIN bus short-to-ground or LIN bus leakage during low-power mode. The 33661 is compatible with LIN Protocol Specification 2.0. LIN PHYSICAL INTERFACE D SUFFIX EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN Features • Operational from VSUP 6.0 V to 18 V DC, Functional up to 27 V DC, and Handles 40 V During Load Dump • Active Bus Waveshaping Offering Excellent Radiated Emission Performance • 5.0 kV ESD on LIN Bus Pin • 30 kΩ Internal Pullup Resistor • LIN Bus Short-to-Ground or High Leakage in Sleep Mode • -18 V to +40 V DC Voltage at LIN Pin • 8.0 µA in Sleep Mode • Local and Remote Wake-Up Capability Reported by INH and RXD Pins • 5.0 V and 3.3 V Compatible Digital Inputs Without Any External Components Required • Pb-Free Packaging Designated by Suffix Code EF ORDERING INFORMATION Device Temperature Range (TA) Package - 40°C to 125°C 8 SOICN MC33661D/R2 MCZ33661EF/R2 VPWR 33661 WAKE INH VDD Regulator 12 V 5.0 V VSUP EN MCU RXD LIN TXD GND Figure 1. 33661 Simplified Application Diagram * This document contains certain information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2006. All rights reserved. LIN Bus INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM VSUP WAKE 20 µA INH Control EN INH Control RXD 30 kΩ LIN Receiver TXD Slope Control GND Figure 2. 33661 Simplified Internal Block Diagram 33661 2 Analog Integrated Circuit Device Data Freescale Semiconductor PIN CONNECTIONS PIN CONNECTIONS RXD 1 8 INH EN 2 7 VSUP WAKE 3 6 LIN TXD 4 5 GND Figure 3. 33661 8-SOICN Pin Connections Table 1. 33661 8-SOICN Pin Definitions A functional description of each pin can be found in the Functional Pin Description section beginning on page page 12. Pin Pin Name Formal Name Definition 1 RXD Data Output 2 EN Enable Control 3 WAKE Wake Input High-voltage input used to wake up the device from Sleep mode. 4 TXD Data Input MCU interface to control the state of the LIN output. 5 GND Ground Device ground pin. 6 LIN LIN Bus Bidirectional pin that represents the single-wire bus transmitter and receiver. 7 VSUP Power Supply Device power supply pin. 8 INH Inhibit Output This pin can have two main functions: controlling an external switchable voltage regulator having an inhibit input or driving a bus external resistor in the master node application. MCU interface that reports the state of the LIN bus voltage. Controls the operation mode of the interface. 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 3 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings Symbol Value Unit ELECTRICAL RATINGS Power Supply Voltage VSUP V Continuous Supply Voltage 27 Transient Voltage (Load Dump) 40 WAKE DC and Transient Voltage (Through a 33 kΩ Serial Resistor) VWAKE -18 to 40 V Logic Voltage (RXD, TXD, EN Pins) VLOG - 0.3 to 5.5 V LIN Bus Voltage VBUS DC Voltage V -18 to 40 Transient (Coupled Through 1.0 nF Capacitor) -150 to 100 INH Voltage / Current DC Voltage VINH - 0.3 to VSUP + 0.3 V DC Current IINH 40 mA ESD Voltage (1) VESD1 V Human Body Model All Pins ± 2000 LIN Pin with Respect to Ground ± 5000 Machine Model VESD2 ± 200 Ambient TA - 40 to 125 Junction TJ - 40 to 150 TSTG - 40 to 150 °C RθJA 150 °C/W TPPRT Note 3. °C Thermal Shutdown Temperature TSHUT 150 to 200 °C Thermal Shutdown Hysteresis Temperature THYST 8.0 to 20 °C THERMAL RATINGS °C Operating Temperature Storage Temperature Thermal Resistance, Junction to Ambient Peak Package Reflow Temperature During Reflow (2), (3) Notes 1 ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω), ESD2 testing is performed in accordance with the Machine Model (CZAP = 220 pF, RZAP = 0 Ω). 2 3. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. 33661 4 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Nominal DC 7.0 13.5 18.0 Functional DC, TA ≥ 25°C 6.0 — — Unit VSUP PIN (DEVICE POWER SUPPLY) Supply Voltage VSUP V µA Supply Current in Sleep Mode VSUP ≤ 13.5 V, Recessive State IS1 — 8.0 12 13.5 V < VSUP < 18 V IS2 — — 200 VSUP ≤ 13.5 V, Dominant State or Shorted to GND IS3 — 300 — IS(REC) — 4.0 6.0 IS(DOM) — 6.0 8.0 0 — 0.9 Supply Current in Normal, Slow, or Fast Mode Bus Recessive, Excluding INH Output Current Bus Dominant, Total Bus Load > 500 Ω, Excluding INH Output Current mA RXD OUTPUT PIN (LOGIC) Low-Level Output Voltage VOL IIN ≤ 1.5 mA High-Level Output Voltage V VOH V VEN = 5.0 V, IOUT ≤ 250 µA 4.25 — 5.25 VEN = 3.3 V, IOUT ≤ 250 µA 3.0 — 3.5 TXD INPUT PIN (LOGIC) Low-Level Input Voltage VIL — — 1.2 V High-Level Input Voltage VIH 2.5 — — V VINHYST 100 300 800 mV - 60 - 35 - 20 Input Threshold Voltage Hysteresis Pullup Current Source µA IPU VEN = 5.0 V, 1.0 V < VTXD < 3.5 V EN INPUT PIN (LOGIC) Low-Level Input Voltage VIL — — 1.2 V High-Level Input Voltage VIH 2.5 — — V VINHYST 100 300 800 mV 5.0 20 30 Input Voltage Threshold Hysteresis Low-Level Input Current High-Level Input Current VIN = 4.0 V µA IIL VIN = 1.0 V µA IIH — 20 40 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 5 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max — — 1.4 Unit LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE) Low-Level Bus Voltage (Dominant State) VDOM External Bus Pullup 500 Ω High-Level Bus Voltage (Recessive State) V VREC TXD HIGH, IOUT = 1.0 µA V VSUP - 1.0 — — Internal Pullup Resistor to VSUP (Normal Mode) RPU 20 30 47 kΩ Internal Pullup Current Source (Sleep Mode) IPU — 20 — µA IOV-CUR 50 75 150 mA 0 3.0 20 µA - 1.0 — 1.0 mA — 1.0 10 µA 0 VSUP — 0.4 VSUP 0.6 VSUP — VSUP 0.475 VSUP 0.5 VSUP 0.525 VSUP — — 0.175 VSUP VLINWU — 0.5 VSUP — V Driver ON Resistance (Normal Mode) INHON — 35 70 Ω Leakage Current (Sleep Mode) ILEAK 0 — 5.0 HIGH-to-LOW Transition 0.3 VSUP 0.43 VSUP 0.55 VSUP LOW-to-HIGH Transition 0.4 VSUP 0.55 VSUP 0.65 VSUP 0.1 VSUP 0.16 VSUP 0.2 VSUP — 1.0 5.0 Overcurrent Shutdown Threshold Leakage Current to GND ILEAK Recessive State, 8.0 V ≤ VSUP ≤ 18 V, 8.0 V ≤ VLIN ≤ 18 V GND Disconnected, VGND = VSUP, VLIN at - 18 V VSUP Disconnected, VLIN at +18 V LIN Receiver, Low-Level Input Voltage VLINL TXD HIGH, RXD LOW LIN Receiver, High-Level Input Voltage VLINH TXD HIGH, RXD HIGH LIN Receiver Threshold Center V VLINHYST VLINH - VLINL LIN Wake-Up Threshold Voltage V VLINTH (VLINH - VLINL) / 2 LIN Receiver Input Voltage Hysteresis V V INH OUTPUT PIN 0 V < VINH < VSUP µA WAKE INPUT PIN Typical Wake-Up Threshold Voltage (EN = 0 V, 7.0 V ≤ VSUP ≤ 18 V) (5) Wake-Up Threshold Voltage Hysteresis WAKE Input Current VWAKE < 27 V VWUTH VWUHYST V V µA IWU Notes 4 This parameter is guaranteed by design; however, it is not production tested. 5 When VSUP > 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V. 33661 6 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Measurement Threshold (50% TXD to 58.1% VSUP) t DOM (MIN) — — 50 Measurement Threshold (50% TXD to 28.4% VSUP) t DOM (MAX) — — 50 Measurement Threshold (50% TXD to 42.2% VSUP) t REC (MIN) — — 50 Measurement Threshold (50% TXD to 74.4% VSUP) t REC (MAX) — — 50 t DOM (MIN) to t REC (MAX) dt1 - 10.44 — 8.12 t DOM (MAX) to t REC (MIN) dt2 - 10.44 — 8.12 Measurement Threshold (50% TXD to 61.6% VSUP) t DOM (MIN) — — 100 Measurement Threshold (50% TXD to 25.1% VSUP) t DOM (MAX) — — 100 Measurement Threshold (50% TXD to 38.9% VSUP) t REC (MIN) — — 100 Measurement Threshold (50% TXD to 77.8% VSUP) t REC (MAX) — — 100 t DOM (MIN) to t REC (MAX) dt1S - 21.88 — 17.44 t DOM (MAX) to t REC (MIN) dt 2S - 21.88 — 17.44 Unit LIN OUTPUT TIMING CHARACTERISTICS FOR NORMAL MODE Dominant Propagation Delay Time TXD to LIN (6) µs Recessive Propagation Delay Time TXD to LIN (6) µs µs Propagation Delay Time Symmetry LIN OUTPUT TIMING CHARACTERISTICS FOR SLOW MODE Dominant Propagation Delay Time TXD to LIN (6) µs Recessive Propagation Delay Time TXD to LIN (6) µs µs Propagation Delay Time Symmetry LIN OUTPUT DRIVER FAST MODE LIN Fast Slew Rate (Programming Mode) dv/dt fast Fast Slew Rate V/µs — 15 — — 10 — — 3.5 6.0 LIN PIN Overcurrent Shutdown Delay Time (7) t OV-DELAY µs LIN RECEIVER CHARACTERISTICS Receiver Dominant Propagation Delay Time (8) Receiver Recessive Propagation Delay Time (8) µs t RH LIN HIGH to RXD HIGH Receiver Propagation Delay Time Symmetry µs t RL LIN LOW to RXD LOW — 3.5 6.0 - 2.0 — 2.0 µs t R-SYM t RL - t RH Notes 6 7.0 V ≤ VSUP ≤ 18 V. Bus load R0 and C0: 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. 7 8 This parameter is guaranteed by design; however, it is not production tested. Measured between LIN signal threshold VLINL or VLINH and 50% of RXD signal. 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 7 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit t LWUE — 5.0 15 µs t WF 10 — 70 µs t WUF 40 70 120 µs 50 — — SLEEP MODE AND WAKE-UP TIMINGS EN Pin Wake-Up Time (9) WAKE Pin Filter Time (10) LIN Pin Wake-Up Filter Time (LIN Bus Wake-Up) Sleep Mode Delay Time (11) (12) Delay for INH Turning off When Device Enters in Sleep Mode(16), (17) Delay Time Between First TXD after Device Mode Selection (13), (14) µs tSD_INH EN HIGH-to-LOW and INH HIGH-to-LOW Delay Time Between EN and TXD for Mode Selection (13), (14) µs t SD EN HIGH-to-LOW — — 50 t D_MS 5.0 — — µs t D_COM 50 — — µs — — 35 — — 5.0 FAST BAUD RATE TIMING Delay Entering Fast Baud Rate Using Toggle Function (15) Delay on EN Pin Resetting Fast Baud Rate to Previous Baud Rate (15) EN LOW to EN HIGH Notes 9 10 11 12 13 14 15 16 17 µs t1 EN LOW to EN HIGH µs t2 See Figures 7 and 8, 10. See Figures 9 and 10, 10. See Figures 11 and 12, 11. See Figure 14a, 11. See Figures 7 through 12, pp. 10–11. This parameter is guaranteed by design; however, it is not production tested. See Figure 13, 11. No capacitor is connected to the INH pin. Measurement is done between the EN HIGH-to-LOW transition at 80% of INH voltage. See Figure 14b, 11. 33661 8 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS TIMING DIAGRAMS TIMING DIAGRAMS TXD Recessive State VREC t REC(MAX) LIN 74.4% VSUP 58.1% VSUP t DOM(MIN) 40% VSUP 60% VSUP 42.2% VSUP 28.4% VSUP VDOM t DOM(MAX) Dominant State t REC(MIN) RXD tRH tRL Figure 4. Normal Mode Bus Timing Characteristics TXD Recessive State t REC(MAX) VREC LIN 77.8% VSUP 61.6% VSUP t DOM(MIN) 60% VSUP 40% VSUP t DOM(MAX) 38.9% VSUP 25.1% VSUP VDOM Dominant State t REC(MIN) RXD t RL t RH Figure 5. Slow Mode Bus Timing Characteristics VSUP VSUP TXD R0 LIN RXD GND C0 Note R0 and C0: 1.0 kΩ/1.0 nF, 660 Ω/6.8 nF, and 500 Ω/10 nF. Figure 6. Test Circuit for Timing Measurements 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 9 ELECTRICAL CHARACTERISTICS FUNCTIONAL DIAGRAMS FUNCTIONAL DIAGRAMS EN WAKE t WF INH INH t LWUE EN TXD t D_MS TXD t D_COM t D_MS LIN RXD t D_COM LIN RXD (High Z) (High Z) Figure 9. WAKE Pin Wake-Up and Normal Baud Rate Selection (1.0 kbps to 20 kbps) Figure 7. EN Pin Wake-Up and Normal Baud Rate Selection (1.0 kbps to 20 kbps) WAKE EN t WF INH INH t LWUE EN TXD TXD t D_MS t D_COM t D_MS t D_COM LIN LIN RXD (High Z) RXD (High Z) Figure 10. WAKE Pin Wake-Up and Slow Baud Rate Selection (1.0 kbps to 10 kbps) Figure 8. EN Pin Wake-Up and Slow Baud Rate Selection (1.0 kbps to 10 kbps) Wake-Up Frame LIN 0.4 VSUP tWUF INH EN TXD RXD t D_MS t D_COM (High Z) Figure 11. LIN Bus Wake-Up and Normal Baud Rate Selection (1.0 kbps to 20 kbps) 33661 10 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS FUNCTIONAL DIAGRAMS LIN Wake-Up Frame 0.4 VSUP t WUF INH EN TXD t D_MS t D_COM RXD (High Z) Figure 12. LIN Bus Wake-Up and Slow Baud Rate Selection (1.0 kbps to 10 kbps) EN = HIGH and TXD = HIGH EN EN TXD t 2 (5.0 µs) EN = LOW and TXD = HIGH Toggle t 1 (35 µs) Reset to Previous Baud Rate Figure 13. Fast Baud Rate Selection (Toggle Function) EN TXD Device in Communication Mode Preparation to Sleep Mode Sleep Mode t SD Figure 14a EN Preparation to Sleep Mode INH Normal or Slow Mode t SD_INH Sleep Mode Figure 14b Figure 14. Sleep Mode Enter 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 11 FUNCTIONAL DESCRIPTION INTRODUCTION FUNCTIONAL DESCRIPTION INTRODUCTION The 33661 is a Physical Layer component dedicated to automotive LIN sub-bus applications. The 33661 features include slew rate selection for optimized operation at 10 kbps and 20 kbps, fast baud rate for test and programming modes, excellent radiated emission performance, and safe behavior in case of LIN bus short-toground or LIN bus leakage during low power mode. Digital inputs are 5.0 V and 3.3 V compatible without any external component required. The INH output may be used to control an external voltage regulator or to drive a LIN bus pullup resistor. FUNCTIONAL PIN DESCRIPTION POWER SUPPLY PIN (VSUP) DATA INPUT PIN (TXD) The VSUP supply pin is the power supply pin for the 33661. The pin is connected to a battery through a serial diode for reverse battery protection. The DC operating voltage is from 7.0 V to 27 V. This pin sustains standard automotive voltage conditions such as 27 V DC during jumpstart conditions and 40 V during load dump. Supply current in the Sleep mode is typically 8.0 µA. The TXD input pin is the MCU interface to control the state of the LIN output. When TXD is LOW, LIN output is LOW; when TXD is HIGH, the LIN output transistor is turned OFF. The threshold is 3.3 V and 5.0 V compatible. The baud rate selection (normal or Slow mode) is done at device wake-up by the state of the TXD pin prior to a HIGH level at the EN pin (see Figures 7 through 12, pp. 10–11). GROUND PIN (GND) DATA OUTPUT PIN (RXD) In case of a ground disconnection at the module level, the 33661 does not have significant current consumption on the LIN bus pin when in the recessive state. (Less than 100 µA is sourced from LIN bus pin, which creates 100 mV drop voltage from the 1.0 kΩ LIN bus pullup resistor.) The RXD output pin is the MCU interface, which reports the state of the LIN bus voltage. LIN HIGH (recessive) is reported by a high voltage on RXD; LIN LOW (dominant) is reported by a low voltage on RXD. The RXD output structure is a CMOS-type push-pull output stage. The low level is fixed. The high level is dependant on the EN voltage. If EN is set at 3.3 V, RXD VOH is 3.3 V. If EN is set at 5.0 V, RXD VOH is 5.0 V. In the Sleep mode, RXD is high impedance. When a wakeup event is recognized from WAKE pin or from the LIN bus pin, RXD is pulled LOW to report the wake-up event. An external pullup resistor may be needed. LIN BUS PIN (LIN) This I/O pin represents the single-wire bus transmitter and receiver. Transmitter Characteristics The LIN driver is a low-side MOSFET with internal overcurrent thermal shutdown. An internal pullup resistor with a serial diode structure is integrated so no external pullup components are required for the application in a slave node. An additional pullup resistor of 1.0 kΩ must be added when the device is used in the master node. Voltage can go from - 18 V to 40 V without current other than the pullup resistance. The LIN pin exhibits no reverse current from the LIN bus line to VSUP, even in the event of GND shift or VPWR disconnection. The transmitter has two slew rate selections: 20 kbps (normal slew rate) and 10 kbps (slow slew rate). The slow slew rate can be used to improve radiated emissions. Receiver Characteristics The receiver thresholds are ratiometric with the device supply pin. ENABLE INPUT PIN (EN) The EN input pin controls the operation mode of the interface. If EN = 1, the interface is in Normal mode, with transmission path from TXD to LIN and from LIN to RXD both active. The threshold is 3.3 V and 5.0 V compatible. The high level at EN defines the VOH at RXD. The Sleep mode is entered by setting EN LOW while TXD is HIGH. Sleep mode is active after the t SD filter time (see Figure 14, 11). INHIBIT OUTPUT PIN (INH) The INH output pin may have two main functions. It may be used to control an external switchable voltage regulator having an inhibit input. The high drive capability also allows it to drive the bus external resistor in the master node application. This is illustrated in Figures 18 and 19, 17. In Sleep mode, INH is turned OFF. If a voltage regulator inhibit input is connected to INH, the regulator will be disabled. If the master node pullup resistor is connected to INH, the pullup resistor will be disabled from the LIN bus. 33661 12 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DESCRIPTION FUNCTIONAL PIN DESCRIPTION WAKE INPUT PIN (WAKE) The WAKE pin is a high-voltage input used to wake up the device from the Sleep mode. WAKE is usually connected to an external switch in the application. The typical wake thresholds are VSUP / 2. The WAKE pin has a special design structure and allows wake-up from both HIGH-to-LOW or LOW-to-HIGH transitions. When entering into Sleep mode, the LIN monitors the state of the WAKE pin and stores it as a reference state. The opposite state of this reference state will be the wake-up event used by the device to enter again into Normal mode. An internal filter is implemented (40 µs typical filtering time delay). WAKE pin input structure exhibits a high impedance, with extremely low input current when voltage at this pin is below 14 V. When voltage at the WAKE pin exceeds 14 V, input current starts to sink into the device. A serial resistor should be inserted in order to limit the input current mainly during transient pulses. Recommended resistor value is 33 kΩ. Important The WAKE pin should not be left open. If the wake-up function is not used, WAKE should be connected to ground to avoid false wake-up. 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 13 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES As described below and depicted in Figure 15 and Table 5 on 15, the 33661 has two operational modes, Normal and Sleep. Normal mode may be adjusted to improve radiated emissions by changing the slew rate of the LIN bus output to Fast or Slow mode. In addition, there are two transitional modes: Awake Mode, which allows the device to go in Normal or Slow mode, and Wait Slow mode, which is a temporary state before the device enters the Slow mode. NORMAL MODE In the Normal mode, the 33661 has slew rate and timing compatible with the LIN protocol specification and operates from 1.0 kbps to 20 kbps. This mode is selected after Sleep mode by setting the TXD pin HIGH prior to setting EN from LOW to HIGH. Once Normal mode is selected, it is impossible to select the Slow mode unless the 33661 is set to Sleep mode. Slow Mode In the Slow mode, the slew rate is around half the normal slew rate, and bus speed operation ranges from 1.0 kbps to 10 kbps. The radiated emission is significantly reduced compared to the already excellent emission level of the Normal mode. Slow mode is entered after Sleep mode by setting the TXD pin LOW prior to setting EN from LOW to HIGH. Once the Slow mode is selected, it is impossible to select the Normal mode unless the device is set to Sleep mode. SLEEP MODE In the Sleep mode, the transmission path is disabled and the 33661 is in low power mode. Supply current from VSUP is very low. Wake-up can occur from LIN bus activity from node internal wake-up through the EN pin and from the WAKE input pin. In the Sleep mode, the 33661 has an internal 20 µA pullup source to VSUP. This avoids the high current path from the battery to ground in the event the bus is shorted to ground. (Refer to succeeding paragraphs describing wake-up behavior.) DEVICE POWER-UP (AWAKE TRANSITIONAL MODE) At power-up (VSUP rises from zero), the 33661 automatically switches to the Awake transitional mode. It switches the INH pin to HIGH state and RXD to LOW state. The MCU of the application will then confirm Normal or Slow mode by setting the TXD and EN pins appropriately. DEVICE WAKE-UP EVENTS The 33661 can be awakened from Sleep mode by three wake-up events: • Remote wake-up via LIN bus activity • Internal node wake-up via the EN pin • Toggling the WAKE pin Remote Wake from LIN Bus (Awake Transitional Mode) Fast Mode In the Fast mode, the slew rate is around 10 times faster than the Normal mode. This allows very fast data transmission (> 100 kbps) — for instance, for electronic control unit (ECU) tests and microcontroller program download. The bus pullup resistor might be reduced to ensure a correct RC time constant in line with the high baud rate used. Fast mode can be selected from either Normal or Slow mode. Fast mode is entered via a special sequence (called toggle function) as follows: TXD and EN pins set LOW, then TXD pulled HIGH, and at the EN pin LOW-to-HIGH transition, the device enters into the Fast Baud Rate. The duration of this sequence must be less than 35 µs. The toggle function is described in Figure 13, 11. Once in the Fast mode, two different procedures will bring the device back to the previously selected mode (Normal or Slow): • The toggle function already described. • A glitch on EN where t 2 < 5.0 µs also resets the device to the previously selected mode (Normal or Slow) (Figure 13). The LIN bus wake-up is recognized by a recessive-todominant transition, followed by a dominant level with a duration greater than 70 µs, followed by a dominant-torecessive transition. This is illustrated in Figures 11 and 12 on 11. Once the wake-up is detected, the 33661 enters the Awake transitional mode, with INH HIGH and RXD pulled LOW. Wake-Up from Internal Node Activity (Normal or Wait Slow Mode) The 33661 can wake up by internal node activity through a LOW-to-HIGH transition of the EN pin. When EN is switched from LOW to HIGH, the device is awakened and enters either the Normal or the Wait Slow transitional mode depending on the level of TXD input. The MCU must set the TXD pin LOW or HIGH prior to waking up the device through the EN pin. Wake-Up from WAKE Pin (Awake Transitional Mode) If the WAKE input pin is toggled, the 33661 enters the Awake transitional mode, with INH HIGH and RXD pulled LOW. 33661 14 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Power-Up TXD HIGH and EN LOW > t1 (35 µs) Fast (10 x) TXD HIGH and EN LOW to HIGH Toggle Function LIN Bus or WAKE Pin Wake-Up Sleep Normal 1.0 to 20 kbps TXD HIGH and EN LOW to HIGH Awake TXD LOW and EN LOW to HIGH TXD HIGH Wait Slow TXD LOW and EN LOW to HIGH EN LOW for t 2 < 5.0 µs, then HIGH EN LOW for t 2 < 5.0 µs, then HIGH EN LOW for t 2 < 5.0 µs, then HIGH Slow 1.0 to 10 kbps Toggle Function TXD HIGH and EN LOW > t1 (35 µs) EN LOW for t 2 < 5.0 µs, then HIGH Fast (10 x) Note Refer to Table 5 for explanation. Figure 15. Operational and Transitional Modes State Diagram Table 5. Explanation of Operational and Transitional Modes State Diagram Operational/ Transitional INH EN TXD RXD Recessive state, driver off. 20 µA pullup current source. LOW LOW X High impedance. HIGH if external pullup to VDD. Recessive state, driver off. 30 kΩ pullup active. HIGH LOW X LOW. If external pullup, HIGH-toLOW transition reports wake-up. Driver active. 30 kΩ pullup active. Slew rate normal (20 kbps). HIGH HIGH HIGH to enter Normal mode. Once in Normal mode: LOW to drive LIN bus in dominant, HIGH to drive LIN bus in recessive. Recessive state. Driver off. 30 kΩ pullup active. HIGH HIGH LOW Slow Driver active. 30 kΩ pullup active. Slew rate slow (10 kbps). HIGH HIGH LOW to enter Slow mode. Once in Slow mode: LOW to drive LIN bus in dominant, HIGH to drive LIN bus in recessive. Report LIN bus level: • Low LIN bus dominant • High LIN bus recessive Fast Driver active. 30 kΩ pullup active. Slew rate fast (> 100 kbps). HIGH HIGH LOW to drive LIN bus in dominant, HIGH to drive LIN bus in recessive. Report LIN bus level: • Low LIN bus dominant • High LIN bus recessive Sleep Mode Awake Normal Mode Wait Slow LIN Report LIN bus level: • Low LIN bus dominant • High LIN bus recessive HIGH X = Don’t care. ELECTROMAGNETIC COMPATIBILITY RADIATED EMISSION IN NORMAL AND SLOW MODES The 33661 has been tested for radiated emission performances. Figures 16 and 17 show the results in the frequency range 100 kHz to 2.0 MHz. Test conditions are in accordance with CISPR25 recommendations, bus length of 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 15 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES 1.5 meters, device loaded with 10 nF and 500 Ω bus impedance. Figure 16 displays the results when the device is set in the Normal mode, optimized for baud rate up to 20 kbps. Figure 17 displays the results when the device is set in the Slow mode, optimized for baud rate up to 10 kbps. The level of emissions is significantly reduced compared to the already excellent level of the Normal mode. Figure 16. Radiated Emission in Normal Mode Figure 17. Radiated Emission in Slow Mode 33661 16 Analog Integrated Circuit Device Data Freescale Semiconductor TYPICAL APPLICATIONS TYPICAL APPLICATIONS The 33661 can be configured in several applications. Figures 18 and 19 show master and slave node applications. An additional pullup resistor of 1.0 kΩ in series with a diode must be added when the device is used in the master node. VPWR 33661 > 33 kΩ External Switch WAKE VSUP 20 µA INH Control Master Node Pullup INH EN I/O VDD Control MCU * VDD 12 V 1.0 kΩ RXD RXD Regulator 30 kΩ VDD LIN Receiver LIN Bus 5.0 V TXD TXD GND Slope Control * Optional Figure 18. Master Node Typical Application VPWR 33661 > 33 kΩ External Switch WAKE VSUP 20 µA INH Control EN I/O INH VDD Control MCU * VDD RXD Regulator 12 V RXD 30 kΩ LIN VDD LIN Bus Receiver 5.0 V INH TXD TXD Slope Control GND * Optional Figure 19. Slave Node Typical Application 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 17 PACKAGING PACKAGE DIMENSIONS PACKAGING PACKAGE DIMENSIONS Important For the most current revision of the package, visit www.freescale.com and do a keyword search on the 98A drawing number below. D SUFFIX EF SUFFIX (PB-FREE) 8-PIN SOIC NARROW BODY PLASTIC PACKAGE 98ASB42564B ISSUE U 33661 18 Analog Integrated Circuit Device Data Freescale Semiconductor REFERENCE DOCUMENTS PACKAGE DIMENSIONS REFERENCE DOCUMENTS Table 6. Reference Documents Title Local Interconnect Network (LIN) Physical Interface: Difference Between MC33399 and MC33661 Literature Number EB215 33661 Analog Integrated Circuit Device Data Freescale Semiconductor 19 REVISION HISTORY REVISION HISTORY REVISION DATE DESCRIPTION OF CHANGES 5.0 10/2006 • • • Implemented Revision History page Updated the Freescale format and style Added MCZ33661EF/R2 to the part number Ordering Information 6.0 11/2006 • Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from MAXIMUM RATINGS on page 4. Added note with instructions from www.freescale.com. 33661 20 Analog Integrated Circuit Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http:// www.freescale.com/epp. USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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