MOTOROLA Order this document by MAC229AFP/D SEMICONDUCTOR TECHNICAL DATA MAC229FP Series MAC229AFP Series Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. TRIACs 8 AMPERES RMS 200 thru 800 VOLTS • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal resistance and High Heat Dissipation • Center Gate Geometry for Uniform Current Spreading • Gate Triggering Guaranteed in Three Modes (MAC229FP Series) or Four Modes (MAC229AFP Series) MT2 G MT1 CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to 110°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC229-4FP, MAC229A4FP MAC229-6FP, MAC229A6FP MAC229-8FP, MAC229A8FP MAC229-10FP, MAC229A10FP On-State RMS Current (TC = 80°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle 60 Hz, TJ = 110°C) Circuit Fusing (t = 8.3 ms) p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs) Peak Gate Current (t Average Gate Power (TC = 80°C, t 8.3 ms) p Operating Junction Temperature Range Storage Temperature Range Mounting Torque Symbol Value VDRM Unit Volts 200 400 600 800 IT(RMS) 8 Amps ITSM 80 Amps I2t 26 A2s IGM ±2 Amps VGM ±10 Volts PGM 20 Watts PG(AV) 0.5 Watts TJ –40 to 110 °C Tstg –40 to 150 °C 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking Current(1) (VD = Rated VDRM, Open Gate) Peak On-State Voltage (ITM = 11 A Peak, Pulse Width Symbol Min Typ Max Unit — — — — 10 2 µA mA — — 1.8 Volts IDRM TJ = 25°C TJ = 110°C VTM p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only (VD = Rated VDRM, TC = 110°C, RL = 10 k) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only VGT mA — — — — 5 10 Volts — — — — 2 2.5 0.2 0.2 — — — — Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open) IH — — 15 mA Gate-Controlled Turn-On Time (VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA) tgt — 1.5 — µs dv/dt — 25 — V/µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 110°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. 10 α = 30° 104 60° 90° 120° 120° 180° 98 α 92 α 86 α = CONDUCTION ANGLE dc dc α = 180° α 8.0 120° α 6.0 90° α = CONDUCTION ANGLE TJ ≈ 110°C 4.0 60° 30° 2.0 0 80 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 2 P(AV) , AVERAGE POWER (WATTS) TC, CASE TEMPERATURE ( °C) 110 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMP) Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– –B– F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. SEATING PLANE C S P N E A Q H STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE 1 2 3 –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C–02 Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC229FP/D* MAC229FP/D