IRF IRLF230 Hexfet transistor Datasheet

Provisional Data Sheet No. PD-9.1614
IRLF230
®
HEXFET TRANSISTOR
N-CHANNEL
200Volt, 0.40 Ω, HEXFET
The Logic Level ‘L’ series of power MOSFETs are
designed to be operated with level logic gate-tosource voltage of 5V. In addition to the well established characteristics of HEXFETs, they have
the added advantage of providing low drive requirements to interface power loads to logic level
IC’s and microprocessors.
Fields of application include: high speed power
applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers.
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRLF230
200V
0.40Ω
5.2A
Features:
n
n
n
n
n
n
Dynamic dv/dt Rating
Logic Level Gate Drive
RDS(on) Specific at VGS = 4V & 5V
150°C Operating Temperature
Fast Switching
Ease of Paralleling
The HEXFET technology is the key to International
Rectifier ’s advance line of logic level power
MOSFET transistors. The efficient geometry and
unique processing of the HEXFET achieve very
low on-state resistance combine with high
transconductance.
Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25°C
ID @ VGS = 5.0V, TC = 100°C
I DM
PD @ TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction
IRLF230
5.2
3.3
20
25
0.20
±10
4.2
-55 to 150
Units
A
W
W/K
V
V/ns
o
C
Storage Temperature Range
Lead Temperature
Weight
300(0.063 in.(1.6mm) from case for 10s)
0.98 (typical)
g
4/7/97
IRLF230
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.28
—
V/°C
—
—
1.0
4.5
—
—
—
—
—
—
—
—
0.40
0.50
2.0
—
25
250
∆BVDSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
nC
ns
VDD = 100V, ID = 5.2A,
RG = 6.0Ω
V
S( )
µA
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
41
4.9
21
9.4
34
43
26
—
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
230
61
—
—
—
Test Conditions
VGS =0 V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 5.0V, ID = 3.1A „
VGS = 4.0V, ID = 2.6A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 3.1A „
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 10 V
VGS = -10V
VGS = 5.0V, ID = 5.2A
VDS = Max Rating x 0.5
Ω
Ω
BVDSS
nA
nH
pF
Measured from dr ain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol showing the internal inductances.
VGS = 0V, VDS = 25 V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
—
—
—
—
5.2
20
A
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
2.0
250
1.7
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Tj = 25°C, IS = 5.2A, VGS = 0V „
Tj = 25°C, I F = 5.2A, di/dt ≤ 100A/µs
VDD ≤ 50V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.
Thermal Resistance
Parameter
Min. Typ. Max. Units
RthJC
Junction-to-Case
—
—
5.0
RthJA
Junction-to-Ambient
—
—
175
K/W
Test Conditions
Typical socket mount
IRLF230
I D , Drain-to-Source Current (A)
TOP
BOTTOM
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
TOP
I D , Drain-to-Source Current (A)
100
10
2.5V
BOTTOM
10
2.5V
20µs PULSE WIDTH
TJ = 25 °C
1
1
10
20µs PULSE WIDTH
TJ = 150 °C
1
100
1
VDS , Drain-to-Source Voltage (V)
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = 50V
20µs PULSE WIDTH
3.0
4.0
5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
6.0
I D = 5.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 5.0V
0
20
40
60
80 100 120 140 160
T J, Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLF230
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1600
Ciss
1200
800
Coss
400
Crss
15
V GS, Gate-to-Source Voltage (V)
2000
ID = 5.2A
VDS = 160V
VDS = 100V
VDS = 40V
12
9
6
3
FOR TEST CIRCUIT
12
SEE FIGURE 13
0
0
1
10
0
100
10
20
30
40
50
Q G, Total Gate Charge (nC)
V DS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
10us
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150° C
Single Pulse
0.1
2.6
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1000
IRLF230
6.0
RD
VDS
VGS
ID , Drain Current (A)
5.0
D.U.T.
RG
+
-VDD
4.0
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
2.0
Fig 10a. Switching Time Test Circuit
VDS
1.0
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response
(Z thJC )
10
0.50
1
0.20
0.10
0.05
0.02
0.1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRLF230
Current Regulator
Same Type as D.U.T.
50KΩ
5.0V
12V
.2µF
QG
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
IRLF230
Notes:
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
‚ K/W = °C/W
ƒ ISD ≤ 5.2A, di/dt ≤ 270 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — TO-205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/97
Similar pages