MEO 500-06 DA Fast Recovery Epitaxial Diode (FRED) Module VRRM = 600 V IFAVM = 514 A trr = 250 ns Preliminary data 3 3 VRSM VRRM V V 600 600 1 1 Type MEO 500-06DA Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 726 514 2680 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4800 5280 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4320 4750 A A Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 ● ● ● ● ● ● t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 115200 117100 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 93300 94800 A2s A2s -40...+150 -40...+125 110 °C °C °C TVJ = 45°C; TVJ Tstg TSmax Ptot TC = 25°C 1750 W VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s 3000 3600 V~ V~ Md Mounting torque (M6) Terminal connection torque (M6) dS dA a Creeping distance on surface Strike distance through air Maximum allowable acceleration 2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. Weight 12.7 9.6 50 mm mm m/s2 150 g Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 24 6 160 mA mA mA VF IF = 300 A; TVJ TVJ TVJ TVJ 1.17 1.36 1.41 1.52 V V V V 0.85 1.09 V mW 0.114 0.071 K/W K/W 300 88 132 ns A A IF = 520 A; Characteristic Values (per diode) typ. max. = 125°C = 25°C = 125°C = 25°C VT0 rT For power-loss calculations only RthJH RthJC DC current DC current trr IRM IF = 600 A VR= 300 V -di/dt = 800 A/ms TVJ = 100°C TVJ = 25°C TVJ = 100°C 250 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved ● Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ● ● ● ● ● Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses ● ● ● ● Dimensions in mm (1 mm = 0.0394") 749 I2t 1-2 MEO 500-06 DA 800 20 T = 100°C VJ V = 300V µC R A IF 200 T = 100°C VJ VR = 300V A IRM Qr 15 600 TVJ=125°C TVJ=25°C 400 150 IF=1200A IF= 600A IF= 300A 10 200 IF=1200A 100 IF= 600A IF= 300A 5 0 0.0 0.4 0.8 1.2 50 0 100 1.6 V 2.0 VF Fig. 1 Forward current IF versus max. voltage drop VF per leg Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 1.4 450 V Qr 250 0.4 200 120 °C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 3.0 µs 2.5 tfr 2.0 VFR IF=1200A IF= 600A IF= 300A 300 IRM 80 TVJ= 100°C IF = 600A VFR 350 40 ms 1000 600 A/ 800 -diF/dt 40 1.0 0 400 tfr 50 trr 0.6 200 60 400 0.8 0 Fig. 3 Typ. peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V ns 1.2 Kf 0 A/ms 1000 -diF/dt ms 1000 600 A/ 800 -diF/dt 30 1.5 20 1.0 10 0.5 0 0 200 400 0.0 600 A/ 800 ms 1000 diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 0.12 Constants for ZthJS calculation: K/W i 0.10 1 2 3 4 0.08 ZthJS thJH 0.06 Rthi (K/W) ti (s) 0.001 0.004 0.027 0.082 0.08 0.024 0.112 0.464 0.04 0.02 0.00 0.001 0.01 0.1 1s 10 t 814 Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 2-2